Results 31 to 40 of about 5,453 (181)
3D NAND flash memory based on junction-less a-Si:H channel with high on/off current ratio
As the key hardware unit of computing in memory, 3D NAND flash memory has been the focus of the artificial intelligence (AI) era due to its high efficiency in processing massive and diverse data, which is superior to the conventional von-Neumann ...
Xinyue Yu +7 more
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Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages
Over the past few decades, NAND flash memory has advanced with exponentially-increasing bit growth. As bit cells in 3D NAND flash memory are stacked up and scaled down together, some potential challenges should be investigated.
Dongwoo Lee, Changhwan Shin
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Impact of Cycling Induced Intercell Trapped Charge on Retention Charge Loss in 3-D NAND Flash Memory
As the 3D NAND technology developing toward more and more stack layers, it is essential to shrink the gate length (Lg) and inter-gate space (Ls). However, one of key concerns of scaling Lg/Ls 3D NAND flash is post-cycling data retention characteristics ...
Xinlei Jia +11 more
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Reading data at a temperature which different from writing can cause a large number of failed bits in 3D NAND Flash memory. In this work, the threshold voltage (Vth) temperature effect of 3D NAND flash memory cell was investigated and a method was ...
Dan Wu +4 more
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In this paper, we propose a gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance and reliability. First, in the selected string, we confirmed that the proposed structure can improve program performance using negative ...
Jae-Min Sim +6 more
doaj +1 more source
Reliable and energy-efficient 3D NAND flash storage system design using run-time device and system interaction [PDF]
NAND Flash memory is a non-volatile solid-state data storage technology widely used in electronic devices such as smartphones, tablets, laptops, digital cameras, USB drives, solid-state drives (SSDs), autonomous vehicles, space applications, and data ...
Raquibuzzaman, Md
core +1 more source
DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability [PDF]
To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM) and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC) design have been explored.
Mittal, Sparsh +2 more
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For triple-level or quad-level 3D NAND flash memory, narrowing the Vth distribution of each state without influencing page program performance is one of the challenges.
Zhichao Du +6 more
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Modeling the Impact of Process Variation on Resistive Bridge Defects [PDF]
Recent research has shown that tests generated without taking process variation into account may lead to loss of test quality. At present there is no efficient device-level modeling technique that models the effect of process variation on resistive ...
Aitken, Robert +4 more
core +1 more source
This letter presents an efficient built‐in error detection methodology for 3D NAND flash memories, in which fast page‐oriented data comparison and column parallel error detection are firstly proposed.
HM. Cao +5 more
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