Results 41 to 50 of about 9,708,358 (219)

Low-voltage solution-processed Cuprous thiocyanate Thin-Film transistors with NAND logic function

Results in Physics, 2023
Coprous thiocyanate (CuSCN)-based thin-film transistors (TFTs) by solution-processed chitosan electrolyte are fabricated on glass substrates. Such TFTs show a low operation voltage of −2.0 V due to the large specific gate capacitance of 7.65 μF/cm2 ...
Liuhui Lei, Wei Dou, Xiaomin Gan, Jia Yang, Wei Hou, Xing Yuan, Weichang Zhou, Dongsheng Tang   +7 more
doaj   +1 more source

Modello del DCP nelle memorie 3D NAND Flash [PDF]

, 2022
LAUREA MAGISTRALELa crescente volontà di aumentare la densità di dati immagazzinabili, in dispositivi di dimensioni sempre più ridotte e più economici da fabbricare, ha condotto la ricerca verso la miniaturizzazione delle memorie NAND.
MONCELLI, VITO FRANCESCO
core  

800 MB/s DDR NAND Flash Memory Multi-Chip Package With Source-Synchronous Interface for Point-to-Point Ring Topology

IEEE Access, 2013
A 256 Gb NAND flash memory multi-chip package (MCP) includes eight stacked 32 Gb 2 bit/cell multi-level cell (MLC) die and an 11.6 mm2 HyperLink NAND bridge chip providing four internal NAND channels for concurrent memory operations.
Peter Gillingham, David Chinn, Eric Choi, Jin-Ki Kim, Don Macdonald, Hakjune Oh, Hong-Beom Pyeon, Roland Schuetz   +7 more
doaj   +1 more source

Behavioral modeling for low-voltage pentacene-based OTFTs and their implementations for organic logic circuits

Engineering Science and Technology, an International Journal, 2023
We present a behavioral compact model and its implementation for low-voltage pentacene-based organic thin film transistors (OTFTs) using industry standard BSIM4 (Berkeley Short-channel IGFET Model) in LTspice platform.
Nihat Akkan, Mustafa Altun, Herman Sedef
doaj   +1 more source

Secondary Particles Generated by Protons in 3D NAND Flash Memories

, 2022
We studied the secondary byproducts created by high-energy protons inside an SEU detector based on 3D NAND Flash memories, extending the previously developed methodology used for detecting heavy ions.
Gerardin S., Santin G., Beltrami S., Costantino A., Ferlet-Cavrois V., Bagatin M., Paccagnella A., Muschitiello M., Pesce A.   +8 more
core   +1 more source

Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory

Micromachines, 2023
Electrical characteristics with various program temperatures (TPGM) in three-dimensional (3-D) NAND flash memory are investigated. The cross-temperature conditions of the TPGM up to 120 °C and the read temperature (TREAD) at 30 °C are used to analyze the
Ukju An, Gilsang Yoon, Donghyun Go, Jounghun Park, Donghwi Kim, Jongwoo Kim, Jeong-Soo Lee   +6 more
doaj   +1 more source

NAND Flash Memory Organization and Operations

, 2015
NAND flash memories are well known for their uncomplicated structure, low cost, and high capacity. Their typical characteristics include architecture, sequential reading, and high density.
Kuchta, Radek, Novotný, Radovan, Kadlec, Jaroslav   +2 more
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory

Micromachines, 2021
In contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better ...
Woo-Jin Jung, Jun-Young Park
doaj   +1 more source