Results 41 to 50 of about 3,697 (183)

Implicit-OR tiling of deoxyribozymes: Construction of molecular scale OR, NAND and four-input logic gates [PDF]

Journal of the Serbian Chemical Society, 2003
We recently reported the first complete set of molecular-scale logic gates based on deoxyribozymes. Here we report how we tile these logic gates and construct new logic elements: OR, NAND, and the first element with four inputs (i1^i5)V(i2^i6). Tiling of
Stojanović Milan N., Nikić Dragan B., Stefanović Darko   +2 more
doaj   +1 more source

Inhibited Channel Potential of 3D NAND Flash Memory String According to Transient Time

Applied Sciences, 2023
The channel potential of natural local self-boosting (NLSB) effects in 16-layer 3D NAND flash memory was analyzed according to transient time. After a program pulse was applied to the selected word line (WL) of the inhibited string channel, the channel ...
Taeyoung Cho, Hyunju Kim, Myounggon Kang
doaj   +1 more source

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

Advanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh, Ki‐bum Lee, Junghyeon Lee, Seunghee Cho, Malkeshkumar Patel, Hangfei Li, Yu Wen, Ye Zhou, Joondong Kim   +8 more
wiley   +1 more source

Molecularly Engineered Wing‐Shaped Azobenzene Memristors for Logic‐in‐Memory and Edge Visual Intelligence

Advanced Science, EarlyView.
Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu, Tao Han, Jiahui Ding, Hong Lian, Lingling Yao, Zhaoxin Xu, Xingyu Zhang, Shuanglong Wang, Jiangnan Xia, Tianchi Zhang, Weiwei Kang, Qingchen Dong   +11 more
wiley   +1 more source

Flanking‐Group Engineering Unlocks Emerging Functionalities in Diketopyrrolopyrrole Semiconductors

Advanced Science, EarlyView.
This review presents a comprehensive and unified perspective of flanking‐group engineering in Diketopyrrolopyrrole (DPP) based organic semiconductors that connects molecular‐level design with cross‐device functionalities. By integrating insights from molecular design, solid‐state packing, and device physics, this review seeks to establish general ...
Xiaoyun Wu, Shanshan Zhou, Meng Li, Aung Ko Ko Kyaw, Xiao‐Lei Shi, Qian Liu   +5 more
wiley   +1 more source

A Unified Flash Memory Platform for Mode‐Adaptive and Robust AI Computation

Advanced Science, EarlyView.
A unified AND‐type flash memory platform enables both transistor‐mode and capacitor‐mode computing‐in‐memory operations within the same device structure. By selectively switching the sensing mode through peripheral reconfiguration, the platform provides adaptable trade‐offs between computational accuracy, robustness, and energy efficiency for AI ...
Dayeon Yu, Hwiho Hwang, Byeongchan Oh, Junmo Lee, Shimeng Yu, Tae‐Hyeon Kim, Hyungjin Kim   +6 more
wiley   +1 more source

Prediction of Random Telegraph Noise-Induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning

IEEE Journal of the Electron Devices Society
Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
doaj   +1 more source

Novel Program Scheme of Vertical NAND Flash Memory for Reduction of Z-Interference

Micromachines, 2021
Minimizing the variation in threshold voltage (Vt) of programmed cells is required to the extreme level for realizing multi-level-cells; as many as even 5 bits per cell recently.
Su-in Yi, Jungsik Kim
doaj   +1 more source

Integration of Reconfigurable p‐Bit and 1R Crossbar Array for Memristive Probabilistic Computing

Advanced Science, EarlyView.
A memristive probabilistic computing system is demonstrated by integrating stochastic p‐bits based on volatile memristors with a 1R crossbar array encoding interaction weights. The system performs weighted‐sum operations across the array and updates p‐bits iteratively.
Keunho Soh, Ji Eun Kim, Suk Yeop Chun, Su In Hwang, Byung Seok Kim, Young Jae Lee, Ho Won Jang, Jung Ho Yoon   +7 more
wiley   +1 more source

Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation

Small Structures
Oxide semiconductors (OSs) are promising materials for NAND flash memory, offering the advantages of high field‐effect mobility and superior large‐area uniformity but suffering from low thermal stability, trade‐off between mobility and stability, and the
Su‐Hwan Choi, Jae‐Min Sim, Jeongmin Shin, Seong‐Hwan Ryu, Taewon Hwang, So Young Lim, Hye‐Jin Oh, Jae‐Hyeok Kwag, Jun‐Yeoub Lee, Ki‐Cheol Song, Yeonhee Lee, Minju Song, Junghwan Kim, Chang‐Kyun Park, Yun‐Heub Song, Jin‐Seong Park   +15 more
doaj   +1 more source