Results 61 to 70 of about 10,230,919 (179)

Proposed camouflaged NAND and NOR gates.

, 2021
Proposed camouflaged NAND and NOR gates.
Fakir Sharif Hossain (11547322), Md. Ismail Hossain (11649066), Md. Liakot Ali (11649063)   +2 more
core   +1 more source

An Engineered Supramolecular Pathway for Enhanced Electrochemiluminescence

Advanced Science, EarlyView.
A supramolecular electrochemiluminescent (ECL) system is presented in which cucurbit[7]uril (CB7) is covalently linked to [Ru(bpy)3]2+, forming a recognition‐responsive emitter. Host‒guest preorganization of tri‐n‐propylamine enables intramolecular ECL, boosting intensity by 162% compared to the standard system.
Maria Vittoria Balli, Madhurima Jana, Chiara Capolungo, Patrick Gruhs, Pierre Picchetti, Giovanni Valenti, Frank Biedermann, Luca Prodi   +7 more
wiley   +1 more source

Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation

Small Structures
Oxide semiconductors (OSs) are promising materials for NAND flash memory, offering the advantages of high field‐effect mobility and superior large‐area uniformity but suffering from low thermal stability, trade‐off between mobility and stability, and the
Su‐Hwan Choi, Jae‐Min Sim, Jeongmin Shin, Seong‐Hwan Ryu, Taewon Hwang, So Young Lim, Hye‐Jin Oh, Jae‐Hyeok Kwag, Jun‐Yeoub Lee, Ki‐Cheol Song, Yeonhee Lee, Minju Song, Junghwan Kim, Chang‐Kyun Park, Yun‐Heub Song, Jin‐Seong Park   +15 more
doaj   +1 more source

Optimizing Cell Structure to Improve Cell Characteristics in IGZO Channel-Based 3D NAND Flash With p-Type Gate

IEEE Access
For the first time, a novel IGZO channel-based 3D NAND Flash structure with an embedded p-type poly-Si injection layer is proposed, using integrated structural, material, and operational modifications to address the limitations of the conventional IGZO ...
Sungho Park, Youngho Jung, Daewoong Kang
doaj   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

PLA Design in NAND Structure [PDF]

, 1981
A NAND (serial gating) structure PLA of the MOS poly-silicon gate process has been developed for high density and medium fast speed VLSI application. Dynamic clocking is used for minimum power dissipation and elimination of the ratio problem associated ...
Lin, Chong Ming
core  

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next‐Generation High‐Density Storage Systems

Advanced Science
Multilevel storage and low‐voltage operation position ferroelectric transistors as promising candidates for next‐generation nonvolatile memory. Among them, gate‐injection‐type ferroelectric transistors offer improved vertical scalability and power ...
Giuk Kim, Sangho Lee, Hyojun Choi, Yangjin Jung, Woongjin Kim, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Mincheol Shin, Jinho Ahn, Sanghun Jeon   +12 more
doaj   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source