Results 81 to 90 of about 3,697 (183)

Indigenous‐Led Adaptation to Complex Climate Risks in New Ireland, Papua New Guinea

Asia Pacific Viewpoint, EarlyView.
ABSTRACT Pacific Island peoples have long histories of adapting to environmental changes, but recent climate change is now driving complex risks that unfold within rapidly shifting societal and environmental contexts. This study investigates how remote Indigenous communities in New Ireland, Papua New Guinea, experience and want to respond to complex ...
Eric Lede, Guy Jackson, Kamilo Bogen, Tristan Pearce   +3 more
wiley   +1 more source

A physics-guided surrogate modeling framework for RDF-dominated variability and bit-error rate analysis of 3D NAND flash memory

Discover Applied Sciences
Three-dimensional (3D) NAND flash memory has become the dominant non-volatile storage technology due to its high density and scalability. However, aggressive vertical stacking introduces significant threshold-voltage (VT) variability that affects device ...
Dikendra Kumar Verma, Anurag Vidyarthi, Upendra Mohan Bhatt   +2 more
doaj   +1 more source

Nanofluidic Spiking Logics Solves Linearly Inseparable and Separable Tasks

Advanced Computing, Volume 1, Issue 1, December 2026.
This work reports the biomimetic nanofluidic spiking logics capable of solving both linearly inseparable and separable tasks. By emulating the non‐monotonic and monotonic activation functions of biological ion channels, it can not only perform linearly separable AND and OR operations, but also implement the linearly inseparable XOR task, an ...
Shuang Wu, Cheng Yuan, Jian‐Xiang Pang, Yu‐Ting Huang, Jing‐Juan Xu, Wei‐Wei Zhao   +5 more
wiley   +1 more source

Soft Mechanical‐Electrical Logic Using Liquid Metal‐Filled 3D‐Printed Architectures

Advanced Engineering Materials, Volume 28, Issue 15, 5 August 2026.
We present 3D‐printed soft mechanical–electrical logic elements that use liquid metal–filled silicone tubes actuated by thermoplastic polyurethane/polylactic acid (TPU/PLA) architectures to produce Boolean operations. Complementary normally open and normally closed unit cells perform repeatable binary transitions and can be combined into more complex ...
Christoph Lehmann, Ryan Kalgreen, Laura M. Comella   +2 more
wiley   +1 more source

Reconfigurable Logic‐in‐Memory Operations Enabled by Triple‐Gated Feedback Field‐Effect Transistors for Area‐Efficient Computing

Advanced Engineering Materials, Volume 28, Issue 15, 5 August 2026.
A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol, Yunwoo Shin, Donghyung Lee, Dongki Kim, Kyoungah Cho, Sangsig Kim   +5 more
wiley   +1 more source

Spectrally Selective Bipolar Self‐Powered Opto‐Synaptic Responses in Tandem 2D van Der Waals Ferroelectric Heterojunctions

Advanced Functional Materials, Volume 36, Issue 62, 3 August 2026.
Tandem 2D vdW ferroelectric heterojunctions enable spectrally selective, self‐powered bipolar opto‐synaptic responses for retinal ON/OFF bipolar cell emulation and wavelength‐programmable logic operations. This work establishes vdW ferroelectric heterojunctions as a compelling materials platform for energy‐efficient, adaptive, and human‐like artificial
Rajiv Kumar Pandey, Chang Yong Park, Cheolhwa Jang, Taeho Kang, Sungjoo Lee   +4 more
wiley   +1 more source

Demonstration of Vertically Stacked ZnO/Te Complementary Field‐Effect Transistor

Advanced Electronic Materials
The complementary field‐effect transistor (CFET) structure is a highly area‐efficient technology. However, their fabrication entails highly complex integration processes using wafer transfer or recrystallization, which has been limiting further ...
Kiyung Kim, Minjae Kim, Yongsu Lee, Hae‐Won Lee, Jae Hyeon Jun, Jun‐Hyeok Choi, Seongbeen Yoon, Hyeon‐Jun Hwang, Byoung Hun Lee   +8 more
doaj   +1 more source

Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage

IEEE Journal of the Electron Devices Society
In this two-part article we discuss the difference between a continuous and a discrete approach to trap modeling in the simulation of 3-D NAND Flash memories with polysilicon channel. In Part I we focus on threshold voltage $({\mathrm { V}}_{\mathrm { T}
Gerardo Malavena, Salvatore M. Amoroso, Andrew R. Brown, Plamen Asenov, Xi-Wei Lin, Victor Moroz, Mattia Giulianini, David Refaldi, Christian Monzio Compagnoni, Alessandro S. Spinelli   +9 more
doaj   +1 more source

Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics: A Comparative Analysis of O/N/O and O/N/F Structures

IEEE Journal of the Electron Devices Society
This study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations.
Sunghyun Woo, Jihwan Lee, Gyunseok Ryu, Myounggon Kang   +3 more
doaj   +1 more source

Sub-1V, flexible, all-polymer complementary logic circuits based on electrolyte-gated transistors

npj Flexible Electronics
Electrolyte-gated transistors (EGTs) are typically limited to p-type operation, with stable n-type devices remaining scarce. In this study, we demonstrate high-performance n-type EGTs using a poly(benzimidazobenzophenanthroline) (BBL) polymer ...
Su Jung Kim, Dong Hyun Park, Yu Na Lee, Min Su Kim, Kihyon Hong, Kyung Gook Cho, C. Daniel Frisbie, Keun Hyung Lee   +7 more
doaj   +1 more source