Results 91 to 100 of about 10,230,919 (179)

Implementing Logic Functions Using Independently-Controlled Gate in Double-Gate Tunnel FETs: Investigation and Analysis

open access: yesIEEE Access, 2019
Recently, a compact realization of logic gates using double-gate tunnel field effect transistors (DGTFETs) with independently-controlled gate has been proposed.
Shelly Garg, Sneh Saurabh
doaj   +1 more source

A Heavy-Ion Detector Based on 3-D NAND Flash Memories

open access: yes, 2020
The feasibility of a 3-D-NAND-Flash-based heavy-ion detector is explored. The possibility of measuring the angle of incidence and the linear energy transfer (LET) of impinging particles by studying the pattern of the threshold voltage shifts along the ...
Gerardin S.   +19 more
core   +1 more source

Challenges and strategies toward next‐generation high‐performance flexible and printable thin‐film transistors

open access: yesFlexMat, EarlyView.
This review explores recent progress in printing strategies such as inkjet, screen, liquid metal, and roll to roll (R2R) methods and their roles in fabricating flexible TFTs. Device architectures are examined with emphasis on printed components and their influence on performance and stability.
Xia Zhao   +6 more
wiley   +1 more source

Wordline Input Bias Scheme for Neural Network Implementation in 3D-NAND Flash

open access: yesBiomimetics
In this study, we propose a neuromorphic computing system based on a 3D-NAND flash architecture that utilizes analog input voltages applied through wordlines (WLs).
Hwiho Hwang   +3 more
doaj   +1 more source

Two‐Dimensional Heterostructures: From Controlled Synthesis to Post‐Moore Device Applications

open access: yesInformation &Functional Materials, EarlyView.
This schematic summarizes four typical configurations of two‐dimensional (2D) heterostructures. It also demonstrates their core applications in high‐performance logic transistors, neuromorphic computing, ultra‐broadband photodetection, and multifunctional integrated devices, visually illustrating the diverse development prospects of 2D heterostructures
Jianing Xie   +3 more
wiley   +1 more source

Domain‐Wall Circulation Gating and Pinning via Compositional Engineering of Cylindrical Nanowires

open access: yesSmall, EarlyView.
Cylindrical magnetic nanowires offer a promising platform for future three‐dimensional spintronic devices. By strategically engineering nanometer‐scale chemical modulations, a novel circulation gate is established to control domain wall propagation.
Laura Álvaro‐Gómez   +14 more
wiley   +1 more source

Van der Waals Hybrid‐Gate Reconfigurable Transistor Integrating Floating‐Gate Logic and Ferroelectric Synaptic Functions

open access: yesSmall, EarlyView.
This study presents a hybrid‐gate reconfigurable transistor based on a van der Waals heterostructure that selectively utilizes floating‐gate and ferroelectric memory modes within a single device. The proposed architecture enables floating‐gate operation for reconfigurable logic with a large memory window and long retention, while employing ...
Hyeonchang Son   +12 more
wiley   +1 more source

Уязвимость Flash NAND [PDF]

open access: yes, 2020
В статье освещается проблема хранения информации на NAND-флэш носителях. Рассматриваются проблемы, связанные с возникновением различного рода ошибок и уязвимостей, а также пути их сглаживания и ...
Цыбулько, К. Д.
core   +1 more source

Tailored Molecular Scissor Unlocks the Autocatalytic Potential of Hybridization Chain Reaction for Tunable Signal Amplification

open access: yesSmall, EarlyView.
We establish a recycling chain reaction (RCR) using a single hairpin, H3, which disassembles HCR assemblies to unlock the inherent autocatalytic potential of HCR. Conventional HCR is redefined as the fully constrained state (H3 = 0) of RCR. Tuning H3 ratios enables dynamic control over DNA assembly, providing a compact platform for biomolecular ...
Ting Li   +5 more
wiley   +1 more source

Oxide semiconductor based charge trap device for vertically integrated NAND flash memory [PDF]

open access: yes, 2017
Vertically integrated NAND flash memory (V-NAND) is the data storage component of modern hand-held electronic devices, which will also critically contribute to the futuristic devices for internet of things.
Hwang, Cheol Seong
core   +1 more source

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