Results 91 to 100 of about 3,668 (177)

Recent Advances on Application of Modified Biochar for the Removal of Pharmaceutical Compounds from Wastewater

ChemistryOpen, Volume 15, Issue 6, June 2026.
Modified biochar is an effective adsorbent for removing pharmaceutical contaminants from water. Physical and chemical modifications enhance its surface area, porosity, and functionality, enabling multiple adsorption mechanisms. These synergistic interactions improve removal efficiency.
Ebrahim Tangestani, Ravinder Kumar, Catherine M. Miller, Elsa Antunes   +3 more
wiley   +1 more source

Innovative Threshold‐Changeable Memory Based on Amorphous GeSbSeN

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 6, June 2026.
Threshold‐Changeable Memory (TCM) operation is demonstrated in amorphous GeSbSeN alloys through optimized polarity‐dependent programming. Sb and N compositional tuning, drift analysis, activation‐energy extraction, and temperature‐dependent measurements reveal how elemental composition governs memory window, threshold‐voltage stability, and programming
Mohamad Kanaan, Renzo Antonelli, Massimo Borghi, Jean Rottner, Mathieu Bernard, Guillaume Bourgeois, Sylvain Gout, Antoine Salvi, François Andrieu, Abdelkader Souifi, Simon Jeannot, Gabriele Navarro   +11 more
wiley   +1 more source

Demonstration of Vertically Stacked ZnO/Te Complementary Field‐Effect Transistor

Advanced Electronic Materials
The complementary field‐effect transistor (CFET) structure is a highly area‐efficient technology. However, their fabrication entails highly complex integration processes using wafer transfer or recrystallization, which has been limiting further ...
Kiyung Kim, Minjae Kim, Yongsu Lee, Hae‐Won Lee, Jae Hyeon Jun, Jun‐Hyeok Choi, Seongbeen Yoon, Hyeon‐Jun Hwang, Byoung Hun Lee   +8 more
doaj   +1 more source

Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage

IEEE Journal of the Electron Devices Society
In this two-part article we discuss the difference between a continuous and a discrete approach to trap modeling in the simulation of 3-D NAND Flash memories with polysilicon channel. In Part I we focus on threshold voltage $({\mathrm { V}}_{\mathrm { T}
Gerardo Malavena, Salvatore M. Amoroso, Andrew R. Brown, Plamen Asenov, Xi-Wei Lin, Victor Moroz, Mattia Giulianini, David Refaldi, Christian Monzio Compagnoni, Alessandro S. Spinelli   +9 more
doaj   +1 more source

Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics: A Comparative Analysis of O/N/O and O/N/F Structures

IEEE Journal of the Electron Devices Society
This study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations.
Sunghyun Woo, Jihwan Lee, Gyunseok Ryu, Myounggon Kang   +3 more
doaj   +1 more source

Sub-1V, flexible, all-polymer complementary logic circuits based on electrolyte-gated transistors

npj Flexible Electronics
Electrolyte-gated transistors (EGTs) are typically limited to p-type operation, with stable n-type devices remaining scarce. In this study, we demonstrate high-performance n-type EGTs using a poly(benzimidazobenzophenanthroline) (BBL) polymer ...
Su Jung Kim, Dong Hyun Park, Yu Na Lee, Min Su Kim, Kihyon Hong, Kyung Gook Cho, C. Daniel Frisbie, Keun Hyung Lee   +7 more
doaj   +1 more source

Wafer‐Scale Bi2O2Se‐on‐Insulator Thin Films for Integrated Electronics

Advanced Electronic Materials
Quasi‐2D semiconducting Bi2O2Se has emerged as a promising candidate for beyond‐silicon electronics due to its outstanding transport performances. However, large‐area growth of high‐quality Bi2O2Se films, which is a critical prerequisite for batch ...
Xi Chen, Penghao Lv, Xintao Yin, Guizhou Xu, Feng Xu   +4 more
doaj   +1 more source

Program Start Bias Grouping to Compensate for the Geometric Property of a String in 3-D NAND Flash Memory

IEEE Journal of the Electron Devices Society
The string (STR) with various geometrical profiles in 3-D NAND flash cause the degradation of program efficiency. This is because the program speed differences among WL layers within the STR are caused by the geometrical properties observed through ...
Sungju Kim, Sangmin Ahn, Sechun Park, Jongwoo Kim, Hyungcheol Shin   +4 more
doaj   +1 more source

Residual stress modulation as a pathway to reliable multilevel 3D NAND flash storage. [PDF]

Nanoscale Adv
Zhou R, Kim IJ, Park S, Kwon H, Lee JS.
europepmc   +1 more source

Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack. [PDF]

Nano Lett
Fernandes L, Wodzro S, Venkatesan P, Ravikumar P, Lee MY, Shon M, Chakraborty D, Song T, Kang S, Soliman S, Tian M, Yeager J, Adler J, Chen J, Wang Z, Wolfe D, Yu S, Padovani A, Datta S, Ray B, Khan A.   +20 more
europepmc   +1 more source