Results 101 to 110 of about 4,326 (205)

Oxide semiconductor based charge trap device for vertically integrated NAND flash memory [PDF]

, 2017
Vertically integrated NAND flash memory (V-NAND) is the data storage component of modern hand-held electronic devices, which will also critically contribute to the futuristic devices for internet of things.
Hwang, Cheol Seong
core   +1 more source

Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory [PDF]

We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode.
Chen, Dakai, Kim, Hak, Label, Kenneth, Ladbury, Raymond, Phan, Anthony, Seidleck, Christina, Wilcox, Edward   +6 more
core   +1 more source

Demonstration of Vertically Stacked ZnO/Te Complementary Field‐Effect Transistor

Advanced Electronic Materials
The complementary field‐effect transistor (CFET) structure is a highly area‐efficient technology. However, their fabrication entails highly complex integration processes using wafer transfer or recrystallization, which has been limiting further ...
Kiyung Kim, Minjae Kim, Yongsu Lee, Hae‐Won Lee, Jae Hyeon Jun, Jun‐Hyeok Choi, Seongbeen Yoon, Hyeon‐Jun Hwang, Byoung Hun Lee   +8 more
doaj   +1 more source

Pengaruh Penambahan Plasticier Gliserol terhadap Karakteristik Hidrogel Kitosan-glutaraldehid untuk Aplikasi Penutup Luka [PDF]

, 2014
PENGARUH PENAMBAHAN PLASTICIER GLISEROL TERHADAP KARAKTERISTIK HIDROGEL KITOSAN-GLUTARALDEHID UNTUK APLIKASI PENUTUP LUKA ABSTRAK Telah dilakukan penelitian untuk mengetahui pengaruh penambahan plasticizer gliserol terhadap karakteristik hidrogel kitosan-
Rudyardjo, D. I. (Djony)
core  

Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage

IEEE Journal of the Electron Devices Society
In this two-part article we discuss the difference between a continuous and a discrete approach to trap modeling in the simulation of 3-D NAND Flash memories with polysilicon channel. In Part I we focus on threshold voltage $({\mathrm { V}}_{\mathrm { T}
Gerardo Malavena, Salvatore M. Amoroso, Andrew R. Brown, Plamen Asenov, Xi-Wei Lin, Victor Moroz, Mattia Giulianini, David Refaldi, Christian Monzio Compagnoni, Alessandro S. Spinelli   +9 more
doaj   +1 more source

Use of PGF for Creation of New Blocks in LaTeX -- TikZ Package [PDF]

, 2016
Bakalárska práca je zameraná na typografický systém LaTeX a s ním súvisiacimi balíkmi TikZ&PGF pri tvorbe vlastných blokov z oblasti elektrotechniky. Cieľom práce bolo vytvoriť manuál, ktorý bude nadstavbou práce Tomáša Pavlorka.
Kubicová, Laura
core  

Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics: A Comparative Analysis of O/N/O and O/N/F Structures

IEEE Journal of the Electron Devices Society
This study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations.
Sunghyun Woo, Jihwan Lee, Gyunseok Ryu, Myounggon Kang   +3 more
doaj   +1 more source

Sub-1V, flexible, all-polymer complementary logic circuits based on electrolyte-gated transistors

npj Flexible Electronics
Electrolyte-gated transistors (EGTs) are typically limited to p-type operation, with stable n-type devices remaining scarce. In this study, we demonstrate high-performance n-type EGTs using a poly(benzimidazobenzophenanthroline) (BBL) polymer ...
Su Jung Kim, Dong Hyun Park, Yu Na Lee, Min Su Kim, Kihyon Hong, Kyung Gook Cho, C. Daniel Frisbie, Keun Hyung Lee   +7 more
doaj   +1 more source

Twisted K-Theory and Gerbes from Hamiltonian Quantization [PDF]

, 2013
In this introductory part we review recent progress in the application of the methods of Hamiltonian quantization to construct twisted K-theory elements and gerbes.
Harju, Antti
core  

Wafer‐Scale Bi2O2Se‐on‐Insulator Thin Films for Integrated Electronics

Advanced Electronic Materials
Quasi‐2D semiconducting Bi2O2Se has emerged as a promising candidate for beyond‐silicon electronics due to its outstanding transport performances. However, large‐area growth of high‐quality Bi2O2Se films, which is a critical prerequisite for batch ...
Xi Chen, Penghao Lv, Xintao Yin, Guizhou Xu, Feng Xu   +4 more
doaj   +1 more source