Results 111 to 120 of about 4,326 (205)

Program Start Bias Grouping to Compensate for the Geometric Property of a String in 3-D NAND Flash Memory

IEEE Journal of the Electron Devices Society
The string (STR) with various geometrical profiles in 3-D NAND flash cause the degradation of program efficiency. This is because the program speed differences among WL layers within the STR are caused by the geometrical properties observed through ...
Sungju Kim, Sangmin Ahn, Sechun Park, Jongwoo Kim, Hyungcheol Shin   +4 more
doaj   +1 more source

Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory

IEEE Journal of the Electron Devices Society
In this paper, we propose a low-power stack-level programming scheme for ultrahigh stack 3D NAND flash memory. As the number of word lines (WLs) increases beyond 300 layers, the increased pass voltage leads to excessive power consumption and reliability ...
Kyungmin Lee, Gunwook Yoon, Seung Jae Baik, Myounggon Kang   +3 more
doaj   +1 more source

Drinfeld modular functions [PDF]

, 1997
Bae, Sunghan, Lee, Seungjae
core   +1 more source

Boosting the Performance of 3D Charge Trap NAND Flash with Asymmetric Feature Process Size Characteristic [PDF]

[[notice ...
Chen, Shuo Han
core  

Periodic solutions of non-linear Schrödinger equations: A para-differential approach

, 2009
40 pages. This is the version of the paper to appear in Analysis and PDEsThis paper is devoted to the construction of periodic solutions of non-linear Schrödinger equations on the torus, for a large set of frequencies.
Delort, Jean-Marc
core   +1 more source

Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack. [PDF]

Nano Lett
Fernandes L, Wodzro S, Venkatesan P, Ravikumar P, Lee MY, Shon M, Chakraborty D, Song T, Kang S, Soliman S, Tian M, Yeager J, Adler J, Chen J, Wang Z, Wolfe D, Yu S, Padovani A, Datta S, Ray B, Khan A.   +20 more
europepmc   +1 more source

Research on unit circuits based on cathode modulated vacuum/air channel electron tube. [PDF]

Microsyst Nanoeng
Ying W, Lai Z, Xu H, Wang M, Ye Q, Fang Z, Liu J, Wang Y.   +7 more
europepmc   +1 more source

Recent progress in HfO₂-based ferroelectric devices with oxide semiconductor channels: a comprehensive review. [PDF]

Nanoscale Adv
Kang HY, Shin YH, Kim DE, Kwon DW, Jeong JK.   +4 more
europepmc   +1 more source

St. Louis Chapter, Sheet Metal & Air Conditioning Contractors National Association and Sheet Metal Workers International Association, AFL-CIO, Local 36 (2001) [PDF]

, 2001

core   +1 more source

Universal Logic-in-Memory Gates Using Reconfigurable Silicon Transistors. [PDF]

Micromachines (Basel)
Kim S, Kim N, Ko Y, Lim D.
europepmc   +1 more source