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11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory
2017 IEEE International Solid-State Circuits Conference (ISSCC), 2017The advent of emerging technologies such as cloud computing, big data, the internet of things and mobile computing is producing a tremendous amount of data. In the era of big data, storage devices with versatile characteristics are required for ultra-fast processing, higher capacity storage, lower cost, and lower power operation. SSDs employing 3D NAND
Chulbum Kim +43 more
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Self-Heating Effects in 3-D Vertical-NAND (V-NAND) Flash Memory
IEEE Transactions on Electron Devices, 2020Self-heating effects (SHEs) were investigated through simulations for 3-D V- NAND flash memory. The SHEs are varied by adjusting the thickness of the poly-crystalline channel, the number of stacked cells along with a bitline, and the configuration of the multilevel cell.
Gyeong-Jun Yun +4 more
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Effect of Device Scaling on Lateral Migration Mechanism of Electrons in V-NAND
2019 Silicon Nanoelectronics Workshop (SNW), 2019In this paper, we analyzed lateral migration (LM) mechanism of V-NAND occurring during retention operation depending on scaling of geometric parameters using TCAD simulation. Modeling for LM was performed and the behavior of time-constant (τ) parameter used for modeling was analyzed.
Changbeom Woo +3 more
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7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate
2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers, 2015Most memory-chip manufacturers keep trying to supply cost-effective storage devices with high-performance characteristics such as smaller tPROG, lower power consumption and longer endurance. For many years, every effort has been made to shrink die size to lower cost and to improve performance.
Jae-Woo Im +33 more
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International Symposium for Testing and Failure Analysis, 2023
Abstract In this paper, we propose a method to get more accurate metrology data using the tilt-axis on a transmission electron microscope (TEM) to compensate for microscopic tilt-axis changes that occur during focused ion beam (FIB) sample preparation processing.
Dong-yeob Kim +4 more
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Abstract In this paper, we propose a method to get more accurate metrology data using the tilt-axis on a transmission electron microscope (TEM) to compensate for microscopic tilt-axis changes that occur during focused ion beam (FIB) sample preparation processing.
Dong-yeob Kim +4 more
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IEEE Electron Device Letters, 2019
Self-heating effects (SHEs) in 3-D V-NAND flash memory are investigated using simulations. First, temperature increase is estimated during the read operation, and a hot spot region along the bit-line is identified. Then, a novel bilayered macaroni filler is proposed to relieve the SHEs.
Jun-Young Park +3 more
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Self-heating effects (SHEs) in 3-D V-NAND flash memory are investigated using simulations. First, temperature increase is estimated during the read operation, and a hot spot region along the bit-line is identified. Then, a novel bilayered macaroni filler is proposed to relieve the SHEs.
Jun-Young Park +3 more
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Numerical Simulations of Silicon Nitride Etching in V-NAND Structures
2023 IEEE 23rd International Conference on Nanotechnology (NANO), 2023Seoyeon Choi +6 more
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ACS Applied Materials & Interfaces
To overcome the limitation of conventional flash memory, electrochemical random-access memory (ECRAM)-based bypass memory (bypass RRAM) has been proposed as a potential candidate for V-NAND memory application. While bypass RRAM demonstrates excellent memory characteristics through ion hopping conduction, the key parameters governing multilevel cell ...
Geonhui Han +8 more
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To overcome the limitation of conventional flash memory, electrochemical random-access memory (ECRAM)-based bypass memory (bypass RRAM) has been proposed as a potential candidate for V-NAND memory application. While bypass RRAM demonstrates excellent memory characteristics through ion hopping conduction, the key parameters governing multilevel cell ...
Geonhui Han +8 more
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A Process-Aware Compact Model for GIDL-Assisted Erase Optimization of 3-D V-NAND Flash Memory
IEEE Transactions on Electron Devices, 2023Yohan Kim, Soyoung Kim
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