Results 71 to 80 of about 3,668 (177)
A Low-Power BL Path Design for NAND Flash Based on an Existing NAND Interface
This paper is an extended version of a previously reported conference paper regarding a low-power design for NAND Flash. As the number of bits per NAND Flash die increases with cost scaling, the IO data path speed increases to minimize the page access ...
Hikaru Makino, Toru Tanzawa
doaj +1 more source
Monotonic transition based forward body bias for dual threshold voltage low power embedded processors [PDF]
Dual threshold voltage and forward body bias techniques are effective ways to optimally balance the standby leakage power and performance. In this paper, we propose a novel fine-grained forward body biasing scheme for monotonic static logic circuits.
S. Jayapal, Y. Manoli
doaj
Abstract The Upper Cretaceous São José do Rio Preto Formation (Bauru Group, southeastern Brazil) has yielded a fragmentary but taxonomically diverse record of titanosaur sauropods, although elements from cervical series remain scarce. Here, we describe a nearly complete sauropod axis from the Vila Ventura Paleontological Area, representing an uncommon ...
Bruno A. Navarro +7 more
wiley +1 more source
Keggin‐type Al‐POM‐coated silica achieves selective surface oxidation of amorphous carbon through electrostatic attraction and proton‐coupled oxidation, tailoring interfacial properties for lithium‐ion batteries and semiconductor processes. ABSTRACT Amorphous carbon is widely used in energy storage and semiconductor technologies, where surface ...
Ganggyu Lee +13 more
wiley +1 more source
MOF‐CAPodes are introduced by pairing various p‐MOFs with an n‐MOF as electrode materials in a battery‐like assembly. The devices achieve high figures of merit (RRI = 23.5; RRII = 94.4%) and perform excellently in prototypical logic gates (AND, OR) highlighting a new direction for ionological systems based on electroactive MOFs.
Tim Engelhardt +9 more
wiley +2 more sources
With Moore’s law closing to its physical limit, traditional von Neumann architecture is facing a challenge. It is expected that the computing in-memory architecture-based resistive random access memory (RRAM) could be a potential candidate to overcome ...
Zhen-Yu He +6 more
doaj +1 more source
Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications
2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia +3 more
wiley +1 more source
In this paper, we propose a novel String-Select-Line Separation Patterning (SSP) scheme designed for low voltage and high-speed program operation in 3D NAND flash memory structures with a separated Source-Line (SL).
Jae-Min Sim, Hakyeong Kim, Yun-Heub Song
doaj +1 more source
Analog Low-Voltage Current-Mode Implementation of Digital Logic Gates
In this letter a new technique is introduced for implementing the basic logic functions using analog current-mode techniques. By expanding the logic functions in power series expressions, and using summers and multipliers, realization of the basic logic ...
Muhammad Taher Abuelma'atti
doaj +1 more source
Physical Unclonable Function Based on 3D‐NAND Flash Array Structure With Multi‐Chip Implementation
Physical unclonable function (PUF) based on a 3D‐NAND flash array is proposed, featuring a multi‐chip structure and a massive challenge–response pair (CRP) capacity. The presented utilizes intrinsic string current variations experimentally verified across eight fabricated 48 × 24 NAND flash arrays.
Hwiho Hwang +4 more
wiley +1 more source

