Results 1 to 10 of about 12,217,467 (150)

Triple‐Level Content‐Addressable Vertical NAND Flash Memory [PDF]

Advanced Science
Content‐addressable memory (CAM) enables massively parallel search by directly comparing input data with stored entries, offering a powerful paradigm for accelerating data‐intensive tasks. Here, we present a triple‐level content‐addressable vertical NAND
Sung‐Ho Park, Jiseong Im, Yeongheon Yang, Ryun‐Han Koo, Jonghyun Ko, Mingyun Oh, Dongbeen Shin, Gyuweon Jung, Jong‐Ho Lee   +8 more
doaj   +4 more sources

Modeling methodology for thermo-structural analysis of V-NAND flash memory structure [PDF]

Scientific Reports
This study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect.
Yongha Kim, Seungjun Ryu, Sungryung Lee
doaj   +3 more sources

Concealable physical unclonable functions using vertical NAND flash memory [PDF]

Nature Communications
Physical Unclonable Functions (PUFs) can address the demand for enhanced hardware security. Vertical NAND (V-NAND) flash memory is the most commercialized non-volatile memory.
Sung-Ho Park, Ryun-Han Koo, Yeongheon Yang, Jiseong Im, Jonghyun Ko, Jong-Ho Lee   +5 more
doaj   +3 more sources

Analysis of vertical AND flash memory for energy-efficient, scalable, fast CIM beyond vertical NAND flash memory [PDF]

Nano Convergence
Compute-in-memory (CIM) has emerged as a promising solution to mitigate the data movement bottleneck in von Neumann architectures. While vertical NAND (V-NAND) flash memory has been explored for CIM, its structural constraints, including pass-bias ...
Jonghyun Ko, Jiseong Im, Sung-Ho Park, Jahyun Gu, Joonhyung Cho, Joon Hwang, Ryun-Han Koo, Jangsaeng Kim, Sung Yun Woo, Jong-Ho Lee   +9 more
doaj   +2 more sources

Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory [PDF]

Advanced Science
The growing use of neural networks in privacy‐sensitive applications necessitates architectures that inherently protect both data and model integrity.
Sung‐Ho Park, Ryun‐Han Koo, Jonghyun Ko, Jiseong Im, Yeongheon Yang, Mingyun Oh, Dongbeen Shin, Gyuweon Jung, Jong‐Ho Lee   +8 more
doaj   +2 more sources

Dynamic pass bias control for temperature-resilient neural networks using vertical NAND flash memory [PDF]

Nano Convergence
Vertical NAND (V-NAND) flash memory has emerged as a promising candidate for neuromorphic computing platforms due to its high density, scalability, and reliability.
Sung-Ho Park, Jiseong Im, Jonghyun Ko, Joon Hwang, Yeongheon Yang, Jong-Won Back, Ryun-Han Koo, In-Seok Lee, Dongbeen Shin, Mingyun Oh, Gyuweon Jung, Jong-Ho Lee   +11 more
doaj   +2 more sources

3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage

Nanomaterials, 2022
As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in the
Xinyue Yu, Zhongyuan Ma, Zixiao Shen, Wei Li, Kunji Chen, Jun Xu, Ling Xu   +6 more
doaj   +2 more sources

Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next‐Generation High‐Density Storage Systems [PDF]

Advanced Science
Multilevel storage and low‐voltage operation position ferroelectric transistors as promising candidates for next‐generation nonvolatile memory. Among them, gate‐injection‐type ferroelectric transistors offer improved vertical scalability and power ...
Giuk Kim, Sangho Lee, Hyojun Choi, Yangjin Jung, Woongjin Kim, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Mincheol Shin, Jinho Ahn, Sanghun Jeon   +12 more
doaj   +2 more sources

Wordline Input Bias Scheme for Neural Network Implementation in 3D-NAND Flash [PDF]

Biomimetics
In this study, we propose a neuromorphic computing system based on a 3D-NAND flash architecture that utilizes analog input voltages applied through wordlines (WLs).
Hwiho Hwang, Gyeonghae Kim, Dayeon Yu, Hyungjin Kim   +3 more
doaj   +2 more sources

Enhancing Charge Trapping Performance of Hafnia Thin Films Using Sequential Plasma Atomic Layer Deposition [PDF]

Nanomaterials
We aimed to fabricate reliable memory devices using HfO2, which is gaining attention as a charge-trapping layer material for next-generation NAND flash memory.
So-Won Kim, Jae-Hoon Yoo, Won-Ji Park, Chan-Hee Lee, Joung-Ho Lee, Jong-Hwan Kim, Sae-Hoon Uhm, Hee-Chul Lee   +7 more
doaj   +2 more sources