Results 11 to 20 of about 12,217,467 (150)

Ising Solver Using Vertical NAND Flash Memory

Advanced Intelligent Systems
Combinatorial optimization problems are notoriously hard for conventional computers to solve efficiently. While quantum and analog hardware have been explored to tackle these problems, they often face challenges such as high power use, complexity, or ...
Sung‐Ho Park, Yeongheon Yang, Jong‐Won Back, Jiseong Im, Ryun‐Han Koo, Jonghyun Ko, Dongseok Kwon, Jong‐Ho Lee   +7 more
doaj   +2 more sources

Two-Dimensional Flash Memory: Materials, Interfaces, and Storage-Computing Convergence. [PDF]

Adv Sci (Weinh)
We systematically summarize recent advances in 2D flash memory, highlighting how interface and material engineering can overcome the conventional trade‐offs among speed, power consumption, and reliability in silicon‐based flash, and outlining its potential for high‐performance memory and in‐memory computing applications.
Wang Z, Meng F, Meng F, Huo S, Xu J, Wang Y, Ma Y, Xie Y, Hu X, Pan C, Wu E.   +10 more
europepmc   +2 more sources

Light-Absorbing-Layer-Free Flash Lamp Annealing for High-Throughput Fabrication of All-Solution-Processed Oxide Electronics. [PDF]

Adv Sci (Weinh)
A flash lamp annealing strategy using a mullite chuck enables rapid conversion of sol–gels to metal oxides on silicon and ultra‐thin glass without extra light‐absorbing layers. Direct light absorption initiates the transformation, and the low thermal conductivity of mullite promotes heat accumulation.
Li Z, He W, Wang G, Zhang J, Chai Z, Lu X.   +5 more
europepmc   +2 more sources

Re-Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors. [PDF]

Adv Sci (Weinh)
Graphical illustration of reconfigurable field effect transistor (RFET) operation modes, including n‐type, p‐type, and ambipolar transport, as well as their areas of application discussed in this review: digital circuit design, analog circuit design, post‐Shannon computing, and sensing. ABSTRACT Reconfigurable field‐effect transistors, short RFETs, are
Trommer J, Martinez JP, He Y, Galderisi G, Pingen K, Oliveros-Mata ES, Tellis L, Cakirlar C, Beyer C, Sapui B, Knoch J, Hofmann K, Carrara S, Cantatore E, Lemme MC, O'Connor I, Kumar A, Heinzig A, Mikolajick T, Weber WM.   +19 more
europepmc   +2 more sources

Controlling the Carrier Injection Efficiency in 3D Nanocrystalline Silicon Floating Gate Memory by Novel Design of Control Layer

Nanomaterials, 2023
Three-dimensional NAND flash memory with high carrier injection efficiency has been of great interest to computing in memory for its stronger capability to deal with big data than that of conventional von Neumann architecture.
Hongsheng Hu, Zhongyuan Ma, Xinyue Yu, Tong Chen, Chengfeng Zhou, Wei Li, Kunji Chen, Jun Xu, Ling Xu   +8 more
doaj   +1 more source

Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory

Micromachines, 2023
The instability in threshold voltage (VTH) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated.
Donghyun Go, Gilsang Yoon, Jounghun Park, Donghwi Kim, Jiwon Kim, Jungsik Kim, Jeong-Soo Lee   +6 more
doaj   +1 more source

Adaptive Pulse Programming Scheme for Improving the V_th Distribution and Program Performance in 3D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2021
For triple-level or quad-level 3D NAND flash memory, narrowing the Vth distribution of each state without influencing page program performance is one of the challenges.
Zhichao Du, Shuang Li, Yu Wang, Xiang Fu, Fei Liu, Qi Wang, Zongliang Huo   +6 more
doaj   +1 more source

A Unified Flash Memory Platform for Mode-Adaptive and Robust AI Computation. [PDF]

Adv Sci (Weinh)
A unified AND‐type flash memory platform enables both transistor‐mode and capacitor‐mode computing‐in‐memory operations within the same device structure. By selectively switching the sensing mode through peripheral reconfiguration, the platform provides adaptable trade‐offs between computational accuracy, robustness, and energy efficiency for AI ...
Yu D, Hwang H, Oh B, Lee J, Yu S, Kim TH, Kim H.   +6 more
europepmc   +2 more sources

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors

Sensors, 2023
Three-dimensional NAND flash memory is widely used in sensor systems as an advanced storage medium that ensures system stability through fast data access. However, in flash memory, as the number of cell bits increases and the process pitch keeps scaling,
Hanshui Fan, Xuan Tian, Huiting Peng, Yinfeng Shen, Liang Li, Ming Li, Liming Gao   +6 more
doaj   +1 more source

Single Event Effects in 3D NAND Flash Memory Cells with Replacement Gate Technology [PDF]

, 2022
We studied the heavy-ion single event effect response of 3D NAND Flash memory cells with charge-trap based replacement gate technology. Error cross sections, threshold voltage shifts, and underlying mechanisms are discussed.
Gerardin S., Beltrami S., Costantino A., Ferlet-Cavrois V., Bagatin M., Paccagnella A., Pesce A.   +6 more
core   +1 more source