Results 71 to 80 of about 485 (168)

Ultra-high bit density liquid-state colloidal memory

Memories - Materials, Devices, Circuits and Systems
Despite the historical growth of storage technologies, such as 3D NAND flash, hard disk drives, and tape storage, each of them is facing inherent scaling limitations. 3D NAND flash suffers from rising costs due to the complex 3D fabrication process.
Bing-Yang Shih, Senne Fransen, Radin Tahvildari, Vasu Siddeswara Kalangi, Kherim Willems, Devin Verreck, Farrukh Yasin, Iuliana Rachita, Pol Van Dorpe, Geert Van den Bosch, Antonio Arreghini, Maarten Rosmeulen, Willem Van Roy   +12 more
doaj   +1 more source

Optimizing Cell Structure to Improve Cell Characteristics in IGZO Channel-Based 3D NAND Flash With p-Type Gate

IEEE Access
For the first time, a novel IGZO channel-based 3D NAND Flash structure with an embedded p-type poly-Si injection layer is proposed, using integrated structural, material, and operational modifications to address the limitations of the conventional IGZO ...
Sungho Park, Youngho Jung, Daewoong Kang
doaj   +1 more source

A String-Select-Line Separation Patterning Scheme for Low Voltage and High-Speed Program Operation in 3D NAND Flash Memory With Separated Source-Line

IEEE Access
In this paper, we propose a novel String-Select-Line Separation Patterning (SSP) scheme designed for low voltage and high-speed program operation in 3D NAND flash memory structures with a separated Source-Line (SL).
Jae-Min Sim, Hakyeong Kim, Yun-Heub Song
doaj   +1 more source

A Study of Invalid Programming in 3D QLC NAND Flash Memories

Proceedings of the 15th ACM Workshop on Hot Topics in Storage and File Systems, 2023
Hongyang Dang, Xiangyu Yao, Zheng Wan, Qiao Li 0001   +3 more
openaire   +1 more source

Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation

Small Structures
Oxide semiconductors (OSs) are promising materials for NAND flash memory, offering the advantages of high field‐effect mobility and superior large‐area uniformity but suffering from low thermal stability, trade‐off between mobility and stability, and the
Su‐Hwan Choi, Jae‐Min Sim, Jeongmin Shin, Seong‐Hwan Ryu, Taewon Hwang, So Young Lim, Hye‐Jin Oh, Jae‐Hyeok Kwag, Jun‐Yeoub Lee, Ki‐Cheol Song, Yeonhee Lee, Minju Song, Junghwan Kim, Chang‐Kyun Park, Yun‐Heub Song, Jin‐Seong Park   +15 more
doaj   +1 more source

A physics-guided surrogate modeling framework for RDF-dominated variability and bit-error rate analysis of 3D NAND flash memory

Discover Applied Sciences
Three-dimensional (3D) NAND flash memory has become the dominant non-volatile storage technology due to its high density and scalability. However, aggressive vertical stacking introduces significant threshold-voltage (VT) variability that affects device ...
Dikendra Kumar Verma, Anurag Vidyarthi, Upendra Mohan Bhatt   +2 more
doaj   +1 more source

Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory

IEEE Journal of the Electron Devices Society
In this paper, we propose a low-power stack-level programming scheme for ultrahigh stack 3D NAND flash memory. As the number of word lines (WLs) increases beyond 300 layers, the increased pass voltage leads to excessive power consumption and reliability ...
Kyungmin Lee, Gunwook Yoon, Seung Jae Baik, Myounggon Kang   +3 more
doaj   +1 more source

Balancing Page Endurance Variation Between Layers to Extend 3D NAND Flash Memory Lifetime. [PDF]

Micromachines (Basel)
Wang J, Fan Y, Du Y, Huang S, Wan Y.
europepmc   +1 more source

A polynomial based valley search algorithm for 3D NAND flash memory

IEICE Electronics Express, 2022
Li, Runze, Tian, Ye, Du, Zhichao, Wang, Yu, Wang, Qi, Huo, Zongliang   +5 more
openaire   +2 more sources

Capacitive in-memory vector-matrix multiplication computing with charge-trap memcapacitors. [PDF]

Nano Converg
Yu J, Hwang H, Kim H, Choi WY.
europepmc   +1 more source