Results 71 to 80 of about 4,190 (193)

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, Volume 2, Issue 2, April 2026.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source

Duality between erasures and defects

, 2016
We investigate the duality of the binary erasure channel (BEC) and the binary defect channel (BDC). This duality holds for channel capacities, capacity achieving schemes, minimum distances, and upper bounds on the probability of failure to retrieve the ...
Kim, Yongjune, Kumar, B. V. K. Vijaya
core   +1 more source

Large‐Scale and Highly Reliable Hopfield Neural Networks Using Vertical NAND Flash Memory for the In‐Memory Associative Computing

Advanced Intelligent Systems, Volume 8, Issue 4, April 2026.
Large‐scale Hopfield neural networks (HNNs) for associative computing are implemented using vertical NAND (VNAND) flash memory. The proposed VNAND HNN with the asynchronous update scenario achieve robust image restoration performance despite fabrication variations, while significantly reducing chip area (≈117× smaller than resistive random‐access ...
Jin Ho Chang, Jae Seung Woo, Suk‐Kang Sung, Ki‐Whan Song, Woo Young Choi   +4 more
wiley   +1 more source

Prediction of Random Telegraph Noise-Induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning

IEEE Journal of the Electron Devices Society
Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
doaj   +1 more source

NAND Flash Memory Characterization [PDF]

, 2019
The NAND technology has become a popular research area and implementation choice due to its non-volatile flash memory characteristics. There are many engineering challenges when it comes to NAND technology.
Heer, Tanvir Singh
core  

Emerging single‐element ferroelectrics: From theory to experiment

InfoMat, Volume 8, Issue 4, April 2026.
This review explores recent developments in single‐element ferroelectrics, covering mechanisms of ferroelectric behavior, their crystal structures, key preparation methods, ferroelectric performance characteristics, and promising device applications in field‐effect transistors, photodetectors, and visual perceptrons.
Run Zhao, Yuhang Zhang, Chen‐Min Dai, Fan Li, Jinlei Zhang, Ju Gao, Yucheng Jiang, Cheng‐Wei Qiu   +7 more
wiley   +1 more source

Building Reliable Massive Capacity SSDs through a Flash Aware RAID-Like Protection

Applied Sciences, 2020
The demand for mass storage devices has become an inevitable consequence of the explosive increase in data volume. The three-dimensional (3D) vertical NAND (V-NAND) and quad-level cell (QLC) technologies rapidly accelerate the capacity increase of flash ...
Jaeho Kim, Jung Kyu Park
doaj   +1 more source

Amber: Enabling Precise Full-System Simulation with Detailed Modeling of All SSD Resources

, 2018
SSDs become a major storage component in modern memory hierarchies, and SSD research demands exploring future simulation-based studies by integrating SSD subsystems into a full-system environment.
Choi, Wonil, Gouk, Donghyun, Jung, Myoungsoo, Kandemir, Mahmut, Kim, Nam Sung, Koh, Sungjoon, Kwon, Miryeong, Zhang, Jie   +7 more
core   +1 more source

Recent Advances in Hafnium Oxide Nanomaterials: From Controlled Synthesis, Structure, and Surface Engineering to Biomedical Applications

Rare Metals, Volume 45, Issue 4, April 2026.
ABSTRACT Hafnium oxide (HfO2) nanoparticles (NPs), derived from a rare‐metal element, have gained increasing attention as a versatile class of functional nanostructures with unique optical, dielectric, and surface properties that enable diverse biomedical applications. As a representative rare‐metal oxide, HfO2 NPs with well‐defined architectures offer
Mothana Hussein Tarawneh, Mohammed Ali Dheyab, Azhar Abdul Rahman, Mutaz Mohammad Alsardi, Azlan Abdul Aziz, Saleh T. Alanezi, Wesam Abdullah, Sara Abdulwahab, Mehran Ghasemlou   +8 more
wiley   +1 more source

Complex Cryptographic and User‐Centric Physically Unclonable Functions Enabled by Strain‐Sensitive Nanocrystals via Selective Ligand Exchange

Advanced Functional Materials, Volume 36, Issue 23, 19 March 2026.
This study investigates electromechanical PUFs that improve on traditional electric PUFs. The electron transport materials are coated randomly through selective ligand exchange. It produces multiple keys and a key with motion dependent on percolation and strain, and approaches almost ideal inter‐ and intra‐hamming distances.
Seungshin Lim, Hanseok Seo, Taesung Park, Byung Ku Jung, Junhyeok Park, Young Kyun Choi, Dae Yang Oh, Soong Ju Oh   +7 more
wiley   +1 more source