Results 71 to 80 of about 3,421,577 (197)

Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping

Memories - Materials, Devices, Circuits and Systems, 2023
The examination of the effect of retrograde channel doping on reliability and performance of 3-D junction-free NAND based flash memory is done for this paper.
Deepika Gupta, Abhishek Kumar Upadhyay, Ankur Beohar, Santosh Kumar Vishvakarma   +3 more
doaj   +1 more source

Domain‐Wall Circulation Gating and Pinning via Compositional Engineering of Cylindrical Nanowires

Small, EarlyView.
Cylindrical magnetic nanowires offer a promising platform for future three‐dimensional spintronic devices. By strategically engineering nanometer‐scale chemical modulations, a novel circulation gate is established to control domain wall propagation.
Laura Álvaro‐Gómez, Claudia Fernández‐González, Sandra Ruiz‐Gómez, Nicolas Mille, Jean Christophe Toussaint, Rachid Belkhou, Michael Foerster, Eva Pereiro, Lucía Aballe, Núria Bagués, Christophe Thirion, Daria Gusakova, Aurelien Masseboeuf, Olivier Fruchart, Lucas Pérez   +14 more
wiley   +1 more source

A Review of Cell Operation Algorithm for 3D NAND Flash Memory

Applied Sciences, 2022
The size of the memory market is expected to continue to expand due to the digital transformation triggered by the fourth industrial revolution. Among various types of memory, NAND flash memory has established itself as a major data storage medium based on excellent cell characteristics and manufacturability; as such, the demand for increasing the bit ...
Jong Kyung Park, Sarah Eunkyung Kim
openaire   +2 more sources

Novel Pattern-Centric Solution for XtackingTM AFM Metrology

Journal of Microelectronic Manufacturing, 2019
3D NAND (three-dimensional NAND type) has rapidly become the standard technology for enterprise flash memories, and is also gaining widespread use in other applications.
Sicong Wang, Jian Mi, Abhishek Vikram, Gao Xu, Guojie Chen, Liming Zhang, Pan Liu   +6 more
doaj   +1 more source

Charge‐Domain In‐Memory Computing With NAND‐Compatible Ferroelectric Memcapacitor Crossbar

Small, EarlyView.
A NAND‐compatible ferroelectric memcapacitor crossbar enables charge‐domain in‐memory computing through displacement‐current‐based readout with strongly suppressed static conduction. The platform combines reliable multilevel programmability, linear vector–matrix multiplication, and 3D‐scalable operation, while supporting hardware‐assisted image ...
Hwiho Hwang, Junsu Yu, Sangwook Youn, Dahoon Lee, Hyungjin Kim   +4 more
wiley   +1 more source

A machine learning framework for predictive electron density modelling to enhance 3D NAND flash memory performance

e-Prime: Advances in Electrical Engineering, Electronics and Energy
Data storage in electronic devices has been revolutionised by 3D NAND flash memory. However, polycrystalline silicon and grain boundaries offer issues that greatly affect memory performance in terms of string current and Program-Erase Threshold Voltage ...
Dikendra Verma, Upendra Mohan Bhatt, Anurag Vidyarthi   +2 more
doaj   +1 more source

Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit

Advanced Materials, Volume 38, Issue 58, 16 October 2026.
Mg─Te chalcogenides address the leakage scaling trade‐off in ultrathin selector‐only memory. Structural partitioning in multiphase Mg─Te, combined with highly ionic Mg─Te bonding and Hf interfacial engineering, supports reliable 5 nm thickness operation at low write voltage with suppressed leakage current, narrow threshold voltage distributions, 10 ns ...
Yoori Seo, Dongmin Kim, Yu Bin Park, Jangseop Lee, Tae Hoon Lee, Hyunsang Hwang   +5 more
wiley   +1 more source

layer granularity refresh for improving performance and lifetime of 3D NAND flash memory

, 2023
학위논문(석사) - 한국과학기술원 : 전산학부, 2023.2,[iv, 33 p. :]NAND flash refresh schemes have been proposed to mitigate retention errors by remapping pages before excessive errors occur in them.
Kim, Hyungsoon
core  

Prediction of Random Telegraph Noise-Induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning

IEEE Journal of the Electron Devices Society
Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
doaj   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, Volume 12, Issue 18, 21 September 2026.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source