Results 91 to 100 of about 3,421,577 (197)

3D NAND-технология для изготовления flash-памяти [PDF]

, 2019
В работе приведен краткий обзор процесса развития микроэлектроники, рассмотрены возможности и перспективы использования 3D NAND-технологии для изготовления flash -памяти и других средств электронной и вычислительной ...
Котов, Е. Г.
core   +1 more source

A Novel Program Scheme for Z-Interference Improvement in 3D NAND Flash Memory. [PDF]

Micromachines (Basel), 2023
Jia J, Jin L, Jia X, You K.
europepmc   +1 more source

An Efficient Dynamic Hash Index Structure for NAND Flash Memory

, 2009
We propose an efficient dynamic hash index structure suitable for a NAND flash memory environment. Since write operations incur significant overhead in NAND flash memory, our design of index structure focuses on minimizing the number of write operations ...
Myoung Ho KIM, Yang, Chul-Woong, Lee, Ki Yong, Ki Yong LEE, Lee, Yoon Joon, Kim, Myoung Ho, Chul-Woong YANG, Yoon-Joon LEE   +7 more
core   +1 more source

Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory. [PDF]

Micromachines (Basel), 2023
You K, Jin L, Jia J, Huo Z.
europepmc   +1 more source

Investigation of Retention Noise for 3-D TLC NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2019
In this paper, the retention noise [electron emission statistics (EES)] after program operation of 3-D triple-level program cell (TLC) NAND flash memory is investigated.
Kunliang Wang, Gang Du, Zhiyuan Lun, Xiaoyan Liu   +3 more
doaj   +1 more source

Ultra-high bit density liquid-state colloidal memory

Memories - Materials, Devices, Circuits and Systems
Despite the historical growth of storage technologies, such as 3D NAND flash, hard disk drives, and tape storage, each of them is facing inherent scaling limitations. 3D NAND flash suffers from rising costs due to the complex 3D fabrication process.
Bing-Yang Shih, Senne Fransen, Radin Tahvildari, Vasu Siddeswara Kalangi, Kherim Willems, Devin Verreck, Farrukh Yasin, Iuliana Rachita, Pol Van Dorpe, Geert Van den Bosch, Antonio Arreghini, Maarten Rosmeulen, Willem Van Roy   +12 more
doaj   +1 more source

Optimizing Cell Structure to Improve Cell Characteristics in IGZO Channel-Based 3D NAND Flash With p-Type Gate

IEEE Access
For the first time, a novel IGZO channel-based 3D NAND Flash structure with an embedded p-type poly-Si injection layer is proposed, using integrated structural, material, and operational modifications to address the limitations of the conventional IGZO ...
Sungho Park, Youngho Jung, Daewoong Kang
doaj   +1 more source

Novel cell-level erase for 3D NAND Flash memory

With advances in AI and the widespread adoption of NAND Flash technology imposing increasingly stringent performance requirements, conventional erase was unable to provide precise erasing in NAND Flash storage systems.
Guokun Ma, Wu Shiwen, Lin Lv, SiYuan Li, nanchang liang, Hao Wang, zhicheng liu, xiaoshan liu   +7 more
core   +1 more source

Effects of the Grain Boundary and Interface Traps on the Electrical Characteristics of 3D NAND Flash Memory Devices

, 2018
Three-dimensional (3D) NAND flash memory devices having a poly-silicon channel with grain boundaries, the cylindrical macaroni channel being outside the inter-oxide filler layer and inside the tunneling oxide layer, were evaluated.
김태환
core   +1 more source

An Erase Efficiency Boosting Strategy for 3D Charge Trap NAND Flash

, 2018
Owing to the fast-growing demands of larger and faster NAND flash devices, new manufacturing techniques have accelerated the down-scaling process of NAND flash memory.
Yu-Pei Liang, Shuo-Han Chen; Yuan-Hao Chang; Yu-Pei Liang; Hsin-Wen Wei; Wei-Kuan Shih, Shou-Han Chen, Hsin-Wen Wei, Yuan-Hao Chang, Wei-Kuan Shih   +5 more
core   +1 more source