Results 91 to 100 of about 802 (202)

White Light Interference Solution for Novel 3D NAND VIA Dishing Metrology

Journal of Microelectronic Manufacturing, 2019
In traditional 3D NAND design, peripheral circuit accounts for 20-30% of the chip real-estate, which reduces the memory density of flash memory. As 3D NAND technology stacks to 128 layers or higher, peripheral circuits may account for more than 50% of ...
Xiaoye Ding, Sicong Wang, Yi Zhou, Yanzhong Ma, Le Yang, Chi Chen   +5 more
doaj   +1 more source

Optimizing Cell Structure to Improve Cell Characteristics in IGZO Channel-Based 3D NAND Flash With p-Type Gate

IEEE Access
For the first time, a novel IGZO channel-based 3D NAND Flash structure with an embedded p-type poly-Si injection layer is proposed, using integrated structural, material, and operational modifications to address the limitations of the conventional IGZO ...
Sungho Park, Youngho Jung, Daewoong Kang
doaj   +1 more source

RBER-Aware Lifetime Prediction Scheme for 3D-TLC NAND Flash Memory

IEEE Access, 2019
NAND flash memory is widely used in various computing systems. However, flash blocks can sustain only a limited number of program/erase (P/E) cycles, which are referred to as the endurance.
Ruixiang Ma, Fei Wu, Meng Zhang, Zhonghai Lu, Jiguang Wan, Changsheng Xie   +5 more
doaj   +1 more source

Probing defects in 3D NAND flash memory with temperature-dependent leakage current [PDF]

AIP Advances
This study investigated the defect profiles of highly stacked 3D NAND flash memory using trap-assisted leakage current analysis. By extracting the activation energy (Ea), we examined leakage mechanisms under hydrogen (H) and fluorine (F) gas annealing ...
Donghyun Kim, Sae-In Bang, Ki Seok Heo, Seoyeon Choi, Jungchun Kim, Seunghee Jin, Minjung Kim, Eunmee Kwon, Jae Woo Lee   +8 more
doaj   +1 more source

Reliable and energy-efficient 3D NAND flash storage system design using run-time device and system interaction

, 2023
NAND Flash memory is a non-volatile solid-state data storage technology widely used in electronic devices such as smartphones, tablets, laptops, digital cameras, USB drives, solid-state drives (SSDs), autonomous vehicles, space applications, and data ...
Raquibuzzaman, Md
core  

A String-Select-Line Separation Patterning Scheme for Low Voltage and High-Speed Program Operation in 3D NAND Flash Memory With Separated Source-Line

IEEE Access
In this paper, we propose a novel String-Select-Line Separation Patterning (SSP) scheme designed for low voltage and high-speed program operation in 3D NAND flash memory structures with a separated Source-Line (SL).
Jae-Min Sim, Hakyeong Kim, Yun-Heub Song
doaj   +1 more source

Channel-Stacked NAND Flash Memory with High-κ Charge Trapping Layer for High Scalability [PDF]

, 2016
학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2016. 2. 박병국.Exploding demands for mobile devices induce the drastic expansion of the market of NAND flash memory as high density storage devices.
서주연
core  

Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation

Small Structures
Oxide semiconductors (OSs) are promising materials for NAND flash memory, offering the advantages of high field‐effect mobility and superior large‐area uniformity but suffering from low thermal stability, trade‐off between mobility and stability, and the
Su‐Hwan Choi, Jae‐Min Sim, Jeongmin Shin, Seong‐Hwan Ryu, Taewon Hwang, So Young Lim, Hye‐Jin Oh, Jae‐Hyeok Kwag, Jun‐Yeoub Lee, Ki‐Cheol Song, Yeonhee Lee, Minju Song, Junghwan Kim, Chang‐Kyun Park, Yun‐Heub Song, Jin‐Seong Park   +15 more
doaj   +1 more source

Characterization of Incremental Step Pulse Programming (ISPP) for 3D NAND Flash Memory

, 2020
MasterThe demand of memory devices is increasing because electronics recently require more data processing than before. Semiconductor technology have been growing by Moore’s law.
박찬양
core  

3D RRAM design and benchmark with 3d NAND FLASH

, 2014
The monolithic 3D integration of resistive switching random access memory (RRAM) is one attractive approach to build high-density non-volatile memory. In this paper, the design considerations of 3D vertical RRAM architecture are presented from the device,
Cong Xu, Shimeng Yu, Yu, Shimeng, Yuan Xie, Chen, Pai Yu, Xie, Yuan, Pai-Yu Chen, Xu, Cong   +7 more
core   +1 more source