Results 81 to 90 of about 3,421,577 (197)

Beyond Conventional Ferroelectric Field‐Effect Transistors: Recent Advances in Materials, Architectures, and Functional Applications

Advanced Physics Research, Volume 5, Issue 9, September 2026.
Ferroelectric field‐effect transistors (FeFETs) are advancing beyond conventional memory transistors into multifunctional hardware platforms enabled by emerging ferroelectric materials, scalable architectures, and neuromorphic/optoelectronic functionalities. Through HfO2‐based, two‐dimensional, and organic ferroelectrics, FeFETs achieve CMOS‐compatible
Hyeseoung Lee, Seungjun Lee, Jung‐Kyu Lee, Sungjun Kim   +3 more
wiley   +1 more source

Characterization of TLC 3D-NAND Flash Endurance through Machine Learning for LDPC Code Rate Optimization

, 2017
The advent of the 3D-NAND Flash memories introduced significant issues in terms of characterization and system-level optimization that can be performed to increase the memory reliability over its lifetime.
Cristian Zambelli, Evelina Lamma, Alessia Marelli, Giuseppe Cancelliere, Cancelliere, Giuseppe, LAMMA, Evelina, Marelli, Alessia, RIGUZZI, Fabrizio, Micheloni, Rino, Rino Micheloni, ZAMBELLI, Cristian, OLIVO, Piero, Fabrizio Riguzzi, Piero Olivo   +13 more
core   +1 more source

Satisfiability Attack-resilient Camouflaged Multiple Multivariable Logic-in-Memory Exploiting 3D NAND Flash Array

, 2022
Logic-in-memory implementations have attracted significant attention recently for energy efficient in-situ processing of big data in this era of IoT. However, the emerging memory technologies such as RRAMs, PCMs, STT-MRAMs, etc.
Shubham Sahay (11925383), Ayush Saxena (14097813), Bhogi Satya Swaroop (14097811)   +2 more
core   +1 more source

Unlocking Ferroelectricity in Hafnia: From Phase Origins to Device Integration

Interdisciplinary Materials, Volume 5, Issue 5, Page 749-771, September 2026.
This review provides a systematic overview of the critical factors for inducing ferroelectricity in hafnia‐based systems, covering multiple dimensions such as physical origin mechanisms, materials research, integration strategies, and emerging application areas.
Jiangzhen Niu, Xichen Tang, Wenhui Shi, Yunrui Xiu, Huimin Mao, Ye Tao, Xiaoning Zhao, Ya Lin, Zhongqiang Wang, Haiyang Xu, Yichun Liu   +10 more
wiley   +1 more source

NAND flash memory technologies

, 2016
This book discusses basic and advanced NAND flash memory technologies, including the principle of NAND flash, memory cell technologies, multi-bits cell technologies, scaling challenges of memory cell, reliability, and 3-dimensional cell as the future ...
Aritome, Seiichi
core  

Characterizing and Optimizing LDPC Performance on 3D NAND Flash Memories

ACM Transactions on Architecture and Code Optimization
With the development of NAND flash memories’ bit density and stacking technologies, while storage capacity keeps increasing, the issue of reliability becomes increasingly prominent. Low-density parity check (LDPC) code, as a robust error-correcting code, is extensively employed in flash memory.
Qiao Li 0001, Yu Chen, Guanyu Wu, Yajuan Du, Min Ye, Xinbiao Gan, Jie Zhang 0048, Zhirong Shen, Jiwu Shu, Chun Xue 0001   +9 more
openaire   +2 more sources

Building Reliable Massive Capacity SSDs through a Flash Aware RAID-Like Protection

Applied Sciences, 2020
The demand for mass storage devices has become an inevitable consequence of the explosive increase in data volume. The three-dimensional (3D) vertical NAND (V-NAND) and quad-level cell (QLC) technologies rapidly accelerate the capacity increase of flash ...
Jaeho Kim, Jung Kyu Park
doaj   +1 more source

Silicon-Richness Impact for Enhanced Charge-Trapping in 3-D NAND Flash Memories

IEEE Journal of the Electron Devices Society
We propose an optimization of N/Si ratio of charge trap silicon nitride (CT-SiN) for 3D NAND flash memory applications. By resorting to density functional theory (DFT) calculations and experimental analyses, we studied the properties influencing SiN ...
Tomoya Nagahashi, Atsushi Oshiyama, Mauro Boero, Hajime Karasawa, Ryota Horiike, Kenji Shiraishi   +5 more
doaj   +1 more source

A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

, 2012
[[abstract]]A double-layer TFT NAND-type flash memory is demonstrated, ushering into the era of three-dimensional (3D) flash memory. A TFT device using bandgap engineered SONOS (BE-SONOS) (Lue et al., 2005, Lai et al., 2006) with fully-depleted (FD) poly
E.K. Lai;H.T. Lue;Y.H. Hsiao;J.Y. Hsieh;S.C. Lee;C.P. Lu;S.Y. Wang;L.W. Yang;K.C. Chen;J. Gong;K.Y. Hsieh;J.Ku;R. Liu;C.Y. Lu
core   +1 more source

Memorie Flash a NAND [PDF]

, 2022
In questa tesi verranno trattate le memorie Flash. Partendo da una breve introduzione all'argomento, si studierà prima il funzionamento a livello fisico del transistor, il suo inserimento in un'architettura a NAND e i metodi di accesso e scrittura del ...
Felber, Henry
core