Results 81 to 90 of about 802 (202)
Advanced Intelligent Systems, Volume 8, Issue 4, April 2026.Large‐scale Hopfield neural networks (HNNs) for associative computing are implemented using vertical NAND (VNAND) flash memory. The proposed VNAND HNN with the asynchronous update scenario achieve robust image restoration performance despite fabrication variations, while significantly reducing chip area (≈117× smaller than resistive random‐access ...
Jin Ho Chang +4 more
wiley +1 more source
Emerging single‐element ferroelectrics: From theory to experiment
InfoMat, Volume 8, Issue 4, April 2026.This review explores recent developments in single‐element ferroelectrics, covering mechanisms of ferroelectric behavior, their crystal structures, key preparation methods, ferroelectric performance characteristics, and promising device applications in field‐effect transistors, photodetectors, and visual perceptrons.
Run Zhao +7 more
wiley +1 more source
, 2022 In this paper, a Silicon-Pillar (SP) structure, a new structure to improve the erase speed in the 3D NAND flash structure to which ferroelectric memory is applied, is proposed and verified.
Jae Kyeong Jeong +3 more
core +1 more source
Channel Stacked Array NAND Flash Memory With Vertically Stacked String Selection Line (SSL) [PDF]
, 2012 학위논문 (석사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2012. 8. 박병국.Three-dimensional (3D) stacked memory devices are representative solutions that can lead to reduce bit cost of NAND flash memories. Recently, many groups have proposed various types of 3D stacked NAND flash
서주연
core
HAIPO: Hybrid AI Algorithm-Based Post-Fabrication Optimization for Modern 3D NAND Flash Memory
To successfully meet the various requirements of modern storage systems, NAND flash memory should be highly optimized by precisely tuning a huge number of internal operating parameters. Although 3D NAND flash memory succeeds in increasing the capacity of
Myungsuk Kim
core +1 more source
Investigation of Retention Noise for 3-D TLC NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2019 In this paper, the retention noise [electron emission statistics (EES)] after program operation of 3-D triple-level program cell (TLC) NAND flash memory is investigated.
Kunliang Wang +3 more
doaj +1 more source
수직 3D NAND Flash 메모리 신뢰성에 관한 전산모사 및 특성분석
, 2020 DoctorTo overcome the limitations of scaling down in the 2D planar NAND flash memory, 3D vertical NAND flash memory attracted attention, and many researches and mass production were carried out.
오현관
core
A Novel Program Scheme for Z-Interference Improvement in 3D NAND Flash Memory. [PDF]
Micromachines (Basel), 2023 Jia J, Jin L, Jia X, You K.
europepmc +1 more source
Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory. [PDF]
Micromachines (Basel), 2023 You K, Jin L, Jia J, Huo Z.
europepmc +1 more source
Methods for Threshold Voltage Setting of String Select Transistors in Channel Stacked NAND Flash Memory [PDF]
, 2017 학위논문 (박사)-- 서울대학교 대학원 공과대학 전기·컴퓨터공학부, 2017. 8. 박병국.Since recent mobile electronic devices such as tablets, laptops, smartphones, or solid-state drives (SSDs) have started to adopt the NAND flash memory as their main data storage device, the demand for ...
김도빈
core