Results 61 to 70 of about 802 (202)

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Ising Solver Using Vertical NAND Flash Memory

Advanced Intelligent Systems, EarlyView.
Commercial V‐NAND flash memory is repurposed as a discrete‐time Ising solver by exploiting in‐memory current summation and read‐voltage‐controlled intrinsic noise. The system implements Hopfield neural‐network updates with simulated‐annealing‐like behavior, solving max‐cut problems with high accuracy and energy efficiency while using mass‐produced ...
Sung‐Ho Park, Yeongheon Yang, Jong‐Won Back, Jiseong Im, Ryun‐Han Koo, Jonghyun Ko, Dongseok Kwon, Jong‐Ho Lee   +7 more
wiley   +1 more source

Keggin‐Type Aluminum Polyoxometalate‐Mediated Oxidation of Amorphous Carbon for Engineered Electrochemical Interfaces

Carbon Energy, EarlyView.
Keggin‐type Al‐POM‐coated silica achieves selective surface oxidation of amorphous carbon through electrostatic attraction and proton‐coupled oxidation, tailoring interfacial properties for lithium‐ion batteries and semiconductor processes. ABSTRACT Amorphous carbon is widely used in energy storage and semiconductor technologies, where surface ...
Ganggyu Lee, Dongmin Kang, Sumin Hong, Hongjun Park, Myungju Woo, Woojin Jeong, Giha Lee, Junsang Lee, Sangkyun Kim, Jea‐Gun Park, Takamasa Mori, Yehwan Kim, Taeseup Song, Ungyu Paik   +13 more
wiley   +1 more source

Novel Pattern-Centric Solution for XtackingTM AFM Metrology

Journal of Microelectronic Manufacturing, 2019
3D NAND (three-dimensional NAND type) has rapidly become the standard technology for enterprise flash memories, and is also gaining widespread use in other applications.
Sicong Wang, Jian Mi, Abhishek Vikram, Gao Xu, Guojie Chen, Liming Zhang, Pan Liu   +6 more
doaj   +1 more source

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Magnetic Field‐Modulated Boolean Logic in Proteinoid‐ Fe3 O4 Hybrid Materials

Advanced Physics Research, Volume 5, Issue 5, May 2026.
Proteinoid‐Fe3O4${\rm Fe}_3{\rm O}_4$. nanoparticle composites exhibit spontaneous electrical oscillations that emulate Boolean logic gates (AND, OR, XOR, NAND, NOR, NOT) under magnetic field modulation. External fields of 65.103 mT tune oscillatory behavior: 84 mT enhances amplitude while 103 mT suppresses it.
Panagiotis Mougkogiannis, Andrew Adamatzky   +1 more
wiley   +1 more source

A machine learning framework for predictive electron density modelling to enhance 3D NAND flash memory performance

e-Prime: Advances in Electrical Engineering, Electronics and Energy
Data storage in electronic devices has been revolutionised by 3D NAND flash memory. However, polycrystalline silicon and grain boundaries offer issues that greatly affect memory performance in terms of string current and Program-Erase Threshold Voltage ...
Dikendra Verma, Upendra Mohan Bhatt, Anurag Vidyarthi   +2 more
doaj   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, Volume 36, Issue 27, 2 April 2026.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Prediction of Random Telegraph Noise-Induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning

IEEE Journal of the Electron Devices Society
Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
doaj   +1 more source