Results 61 to 70 of about 485 (168)
Carbon Energy, Volume 8, Issue 7, July 2026.Keggin‐type Al‐POM‐coated silica achieves selective surface oxidation of amorphous carbon through electrostatic attraction and proton‐coupled oxidation, tailoring interfacial properties for lithium‐ion batteries and semiconductor processes. ABSTRACT Amorphous carbon is widely used in energy storage and semiconductor technologies, where surface ...
Ganggyu Lee +13 more
wiley +1 more source
Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories
Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley +1 more source
Building Reliable Massive Capacity SSDs through a Flash Aware RAID-Like Protection
Applied Sciences, 2020 The demand for mass storage devices has become an inevitable consequence of the explosive increase in data volume. The three-dimensional (3D) vertical NAND (V-NAND) and quad-level cell (QLC) technologies rapidly accelerate the capacity increase of flash ...
Jaeho Kim, Jung Kyu Park
doaj +1 more source
Hardware‐Based On‐Chip Learning Using a Ferroelectric AND‐Type Array With Random Synaptic Weights
Advanced Intelligent Systems, Volume 8, Issue 6, June 2026.This work demonstrates an energy‐efficient on‐chip learning system using an Metal‐Ferroelectric‐Insulator‐Semiconductor FeAND synaptic array. By employing a feedback alignment scheme with a separate backward array using fixed random weights, the system overcomes directional limitations of AND‐type arrays and achieves robust, low‐power learning suitable
Minsuk Song +8 more
wiley +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
Characterizing and Optimizing LDPC Performance on 3D NAND Flash Memories
ACM Transactions on Architecture and Code OptimizationWith the development of NAND flash memories’ bit density and stacking technologies, while storage capacity keeps increasing, the issue of reliability becomes increasingly prominent. Low-density parity check (LDPC) code, as a robust error-correcting code, is extensively employed in flash memory.
Qiao Li 0001 +9 more
openaire +2 more sources
Silicon-Richness Impact for Enhanced Charge-Trapping in 3-D NAND Flash Memories
IEEE Journal of the Electron Devices SocietyWe propose an optimization of N/Si ratio of charge trap silicon nitride (CT-SiN) for 3D NAND flash memory applications. By resorting to density functional theory (DFT) calculations and experimental analyses, we studied the properties influencing SiN ...
Tomoya Nagahashi +5 more
doaj +1 more source
A Novel Program Scheme for Z-Interference Improvement in 3D NAND Flash Memory. [PDF]
Micromachines (Basel), 2023 Jia J, Jin L, Jia X, You K.
europepmc +1 more source
Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory. [PDF]
Micromachines (Basel), 2023 You K, Jin L, Jia J, Huo Z.
europepmc +1 more source
Investigation of Retention Noise for 3-D TLC NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2019 In this paper, the retention noise [electron emission statistics (EES)] after program operation of 3-D triple-level program cell (TLC) NAND flash memory is investigated.
Kunliang Wang +3 more
doaj +1 more source