Results 101 to 110 of about 802 (202)

An Erase Efficiency Boosting Strategy for 3D Charge Trap NAND Flash

open access: yes, 2018
Owing to the fast-growing demands of larger and faster NAND flash devices, new manufacturing techniques have accelerated the down-scaling process of NAND flash memory.
Yu-Pei Liang   +5 more
core   +1 more source

A Study of Invalid Programming in 3D QLC NAND Flash Memories

open access: yesProceedings of the 15th ACM Workshop on Hot Topics in Storage and File Systems, 2023
Hongyang Dang   +3 more
openaire   +1 more source

Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory

open access: yesIEEE Journal of the Electron Devices Society
In this paper, we propose a low-power stack-level programming scheme for ultrahigh stack 3D NAND flash memory. As the number of word lines (WLs) increases beyond 300 layers, the increased pass voltage leads to excessive power consumption and reliability ...
Kyungmin Lee   +3 more
doaj   +1 more source

3D NAND memory as radiation monitor

open access: yes, 2019
This thesis explores the feasibility of using 3D NAND flash memory as space radiation monitor. Space radiation is composed by ionizing particles such as protons and ions, which can be harmful to electronics.
Lie, Sonny (author)
core  

Role of Interface Roughness on Program/Erase Efficiency in 3D SONOS NAND Flash Memory

open access: yes, 2020
MasterTechnology computer-aided design (TCAD) is an electronic design automation (EDA) tool that models the semiconductor device fabrication and operation based on fundamental physics through the computer aided simulations for design and optimization of ...
조용진
core  

Cryogenic investigation of read current instability in 3D NAND flash memory

open access: yes
LAUREA MAGISTRALELa tecnologia NAND Flash rappresenta ad oggi la principale soluzione per l'archiviazione dei dati su supporti di memoria non volatile.
Burattini, Michelangelo
core  

Optimizing Confined Nitride Trap Layers for Improved Z-Interference in 3D NAND Flash Memory

open access: yes
This paper presents an innovative approach to alleviate Z-interference in 3D NAND flash memory by proposing an optimized confined nitride trap layer structure.
Seul Ki Hong, Yeeun Kim, Jong Kyung Park
core   +1 more source

Patent Analysis and Research of NAND Flash memory industry

open access: yes, 2016
In recent years, due to the Smartphone and SSD demand, manufacturers develop high-capacity, fast read, write speeds and low-cost products. Chinese manufacturers are also optimistic about NAND Flash the future development of the industry, spend a lot of ...
Wu, Chieh-yun
core  

A polynomial based valley search algorithm for 3D NAND flash memory

open access: yesIEICE Electronics Express, 2022
Li, Runze   +5 more
openaire   +2 more sources

High Mobility and GIDL Erase-Compatible Characteristics in Hybrid Channel (Poly-Si/IGO) for Ultrahigh 3D NAND Flash Memory Applications

open access: yes
In this paper, we propose a hybrid channel (HC) structure in which the poly-Si and indium gallium oxide (IGO) channels coexist to achieve high mobility and gate-induced-drain-leakage (GIDL) erase-compatible characteristics for 3D NAND flash memory ...
Ji-Ho Song (2716798)   +5 more
core   +1 more source

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