Results 101 to 110 of about 3,421,577 (197)
A Study of Invalid Programming in 3D QLC NAND Flash Memories
Proceedings of the 15th ACM Workshop on Hot Topics in Storage and File Systems, 2023 Hongyang Dang +3 more
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Small StructuresOxide semiconductors (OSs) are promising materials for NAND flash memory, offering the advantages of high field‐effect mobility and superior large‐area uniformity but suffering from low thermal stability, trade‐off between mobility and stability, and the
Su‐Hwan Choi +15 more
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IEEE AccessIn this paper, we propose a novel String-Select-Line Separation Patterning (SSP) scheme designed for low voltage and high-speed program operation in 3D NAND flash memory structures with a separated Source-Line (SL).
Jae-Min Sim, Hakyeong Kim, Yun-Heub Song
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A NOR Emulation Strategy over NAND Flash Memory
, 2007 快閃記憶體大致可分為兩類：NOR型快閃記憶體及NAND型快閃記憶體。一般而言，因為有就地執行（eXecute-In-Place，XIP）和快速讀取等特性，NOR型快閃記憶體應用上適用於儲存程式的可執行檔。而擁有較大容量與較快寫入速度的NAND型快閃記憶體則適用於資料儲存。此外，兩者在成本上有很大的差距，NOR型快閃記憶體相對於NAND型快閃記憶體高出許多。基於市場的趨勢，若能以較具經濟效益的NAND型快閃記憶體取代NOR型快閃，將可大幅地降低成本、提升毛利。在這篇論文中 ...
Lin, Chien-Hung, 林建宏
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HAIPO: Hybrid AI Algorithm-Based Post-Fabrication Optimization for Modern 3D NAND Flash Memory
To successfully meet the various requirements of modern storage systems, NAND flash memory should be highly optimized by precisely tuning a huge number of internal operating parameters. Although 3D NAND flash memory succeeds in increasing the capacity of
Myungsuk Kim
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Discover Applied SciencesThree-dimensional (3D) NAND flash memory has become the dominant non-volatile storage technology due to its high density and scalability. However, aggressive vertical stacking introduces significant threshold-voltage (VT) variability that affects device ...
Dikendra Kumar Verma +2 more
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3D NAND memory as radiation monitor
, 2019 This thesis explores the feasibility of using 3D NAND flash memory as space radiation monitor. Space radiation is composed by ionizing particles such as protons and ions, which can be harmful to electronics.
Lie, Sonny (author)
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IEEE Journal of the Electron Devices SocietyIn this paper, we propose a low-power stack-level programming scheme for ultrahigh stack 3D NAND flash memory. As the number of word lines (WLs) increases beyond 300 layers, the increased pass voltage leads to excessive power consumption and reliability ...
Kyungmin Lee +3 more
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An efficient fault detection algorithm for NAND flash memory
, 2011 As flash memory gains its momentum in the storage market of embedded systems, existing fault detection algorithms face serious challenges due to the special characteristics of NAND flash memory and the rapid degradation of its reliability.
Tei-Wei Kuo +4 more
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Channel Stacked Array NAND Flash Memory With Vertically Stacked String Selection Line (SSL) [PDF]
, 2012 학위논문 (석사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2012. 8. 박병국.Three-dimensional (3D) stacked memory devices are representative solutions that can lead to reduce bit cost of NAND flash memories. Recently, many groups have proposed various types of 3D stacked NAND flash
서주연
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