Results 111 to 120 of about 802 (202)

Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory

, 2017
We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode.
Ladbury, Raymond, Seidleck, Christina, Phan, Anthony, Label, Kenneth, Kim, Hak, Wilcox, Edward, Chen, Dakai   +6 more
core  

Investigation of the Connection Schemes between Decks in 3D NAND Flash. [PDF]

Micromachines (Basel), 2023
Jia J, Jin L, You K, Zhu A.
europepmc   +1 more source

Evaluation of the Radiation Susceptibility of a 3D NAND Flash Memory

, 2017
We evaluated the heavy ion and proton-induced single-event effects (SEE) for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of similar density and performance in the multiple-cell level (MLC) storage ...
LaBel, Kenneth, Seidleck, Christina, Ladbury, Raymond, Phan, Anthony, Kim, Hak, Chen, Dakai, Wilcox, Edward   +6 more
core  

Residual stress modulation as a pathway to reliable multilevel 3D NAND flash storage. [PDF]

Nanoscale Adv
Zhou R, Kim IJ, Park S, Kwon H, Lee JS.
europepmc   +1 more source

Spatial Charge Trap Engineering with Boron Nitride Barrier for 3D V-NAND Flash Memory

Spatial charge trap engineering using amorphous boron nitride (BN) energy barrier for 3D V-NAND flash memory device is presented. A 1 nm thick BN layer is inserted within a silicon nitride (SiN) charge trap layer (CTL) using an In-situ ALD process.
Kang, Daehyun, Cho, Byung-Jin, Jeong, Jae Joong, Sin, Dong Hun, Park, Young Keun, Choi, Han Mei   +5 more
core  

Analysis of vertical AND flash memory for energy-efficient, scalable, fast CIM beyond vertical NAND flash memory. [PDF]

Nano Converg
Ko J, Im J, Park SH, Gu J, Cho J, Hwang J, Koo RH, Kim J, Woo SY, Lee JH.   +9 more
europepmc   +1 more source

Incremental Pulse-Width Erase (IPWE) Scheme for Fast and Variation-Tolerant GIDL Erase of 3D NAND Flash. [PDF]

Micromachines (Basel)
Park Y, Shim W.
europepmc   +1 more source

Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack. [PDF]

Nano Lett
Fernandes L, Wodzro S, Venkatesan P, Ravikumar P, Lee MY, Shon M, Chakraborty D, Song T, Kang S, Soliman S, Tian M, Yeager J, Adler J, Chen J, Wang Z, Wolfe D, Yu S, Padovani A, Datta S, Ray B, Khan A.   +20 more
europepmc   +1 more source

TiO₂ nanolayer-assisted top-interface engineering for disturbance-free FeFETs: a blueprint for future van der Waals memory. [PDF]

Nano Converg
Kang H, Kwak J, Kim G, Lee S, Kim Y, Park S, Lim S, Seo K, Kim W, Ha D, Ahn J, Jeon S.   +11 more
europepmc   +1 more source

Recent progress in HfO₂-based ferroelectric devices with oxide semiconductor channels: a comprehensive review. [PDF]

Nanoscale Adv
Kang HY, Shin YH, Kim DE, Kwon DW, Jeong JK.   +4 more
europepmc   +1 more source