Ferroelectric NAND for efficient hardware bayesian neural networks. [PDF]
Song M +10 more
europepmc +1 more source
Origin of the Temperature Dependence of Gate-Induced Drain Leakage-Assisted Erase in Three-Dimensional nand Flash Memories. [PDF]
Refaldi DG +4 more
europepmc +1 more source
Amorphous boron nitride as a low-k dielectric for next-generation BEOL interconnects. [PDF]
Baek JW +6 more
europepmc +1 more source
Post-Moore two-dimensional integrated electronics for angstrom-nodes. [PDF]
Shen Z +5 more
europepmc +1 more source
A full-featured 2D flash chip enabled by system integration. [PDF]
Liu C +13 more
europepmc +1 more source
Ferroelectric Hafnium Oxide for In-Memory Computing: Advancing Devices, Circuit Architectures, and System-Level Integration. [PDF]
He C, Li W, Li J, Li Q, Xie Z, Du T.
europepmc +1 more source
Recent advances in ferroelectric materials, devices, and in-memory computing applications. [PDF]
Hwang H, Youn S, Kim H.
europepmc +1 more source
Band and Field Coengineered Charge Trap Memristor via Au Nanoparticle Layer for Programming Speed Enhancement. [PDF]
Kim G +6 more
europepmc +1 more source
Interface-Engineered, Low-Damage IGZO/HfO<sub>2</sub> Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD Process. [PDF]
Hwang I +7 more
europepmc +1 more source
RRAM-Based Neuromorphic Devices for Artificial-Intelligence Hardware: Device Physics, Materials, Processing, and Packaging. [PDF]
Pyo SG.
europepmc +1 more source

