Results 131 to 140 of about 4,190 (193)

A comprehensive review of advanced trends: from artificial synapses to neuromorphic systems with consideration of non-ideal effects. [PDF]

Front Neurosci
Kim K, Song MS, Hwang H, Hwang S, Kim H.
europepmc   +1 more source

Valence fragmentation dynamics of a promising low global warming etching gas CF₃CHCF₂. [PDF]

Sci Rep
Nguyen TT, Hayashi T, Iwayama H, Ishikawa K.   +3 more
europepmc   +1 more source

Advances in core technologies for semiconductor manufacturing: applications and challenges of atomic layer etching, neutral beam etching and atomic layer deposition. [PDF]

Nanoscale Adv
Lee TY, Chen PT, Huang CC, Chen HC, Chen LY, Lee PT, Chen FC, Horng RH, Kuo HC.   +8 more
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From Light to Logic: Recent Advances in Optoelectronic Logic Gate. [PDF]

Small Sci
Kim W, Ahn D, Lee M, Lim N, Kim H, Pak Y.   +5 more
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Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution. [PDF]

Nanomicro Lett
Lee JH, Kim JY, Lee HJ, Choi SJ, Lee YJ, Jang HW.   +5 more
europepmc   +1 more source

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3D Charge Trap NAND Flash Memories

ECS Transactions, 2016
This chapter starts off with 2 vertical channel architectures named BiCS (Bit Cost Scalable) and P-BiCS (Pipe-Shaped BiCS), respectively. BiCS was proposed for the first time by Toshiba in 2007, and another version called P-BiCS was presented in 2009 to improve retention, source selector performances and source line resistance.
Luca Crippa, Rino Micheloni
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Microscopic Physical Origin of Charge Traps in 3D NAND Flash Memories

Extended Abstracts of the 2022 International Conference on Solid State Devices and Materials, 2022
Abstract We performed the first-principles calculations for a nitrogen vacancy (V N) and hydrogen(H) atom in β-Si3N4 to clarify the atomistic origin of charge traps in silicon nitride (SiN) layers and charge-trapping mechanism used for 3D NAND flash memories.
Fugo Nanataki, Jun-Ichi Iwata, Kenta Chokawa, Masaaki Araidai, Atsushi Oshiyama, Kenji Shiraishi   +5 more
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Reliability challenges in 3D NAND Flash memories

2019 IEEE 11th International Memory Workshop (IMW), 2019
The reliability of 3D NAND Flash memory technology is depending on many factors. Most of them are related to the process-induced variability of the layers. Endurance, data retention capabilities, and cross-temperature immunity are the metrics that become affected by this, turning in peculiar reliability challenges that are difficult to be tackled ...
Zambelli C., Micheloni R., Olivo P.
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Modeling of Threshold Voltage Distribution in 3D NAND Flash Memory

2021 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2021
3D NAND flash memory faces unprecedented complicated interference than planar NAND flash memory, resulting in more concern regarding reliability and performance. Stronger error correction code (ECC) and adaptive reading strategies are proposed to improve the reliability and performance taking a threshold voltage (V th ) distribution model as the ...
Weihua Liu, Fei Wu, Jian Zhou, Meng Zhang, Chengmo Yang, Zhonghai Lu, Yu Wang, Changsheng Xie   +7 more
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Natural Local Self-Boosting Effect in 3D NAND Flash Memory

IEEE Electron Device Letters, 2017
This letter examined the natural local self-boosting effect of an inhibited channel in three-dimensional (3D) NAND flash memory. The inhibited channel in the 3D NAND flash structure can be in the floating state easily, because its channel is not connected directly to its substrate.
Myounggon Kang, Yoon Kim
exaly   +2 more sources