Recent advances in ferroelectric materials, devices, and in-memory computing applications. [PDF]
Nano ConvergHwang H, Youn S, Kim H.
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Band and Field Coengineered Charge Trap Memristor via Au Nanoparticle Layer for Programming Speed Enhancement. [PDF]
Small SciKim G +6 more
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Analysis of the Ambipolar Conduction of Tin Monoxide Thin-Film Transistors with Indium Tin Oxide Electrodes. [PDF]
ACS Appl Mater InterfacesMun SA +8 more
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Two-Dimensional Materials, the Ultimate Solution for Future Electronics and Very-Large-Scale Integrated Circuits. [PDF]
Nanomicro LettQin L, Wang L.
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Progress of emerging non-volatile memory technologies in industry. [PDF]
MRS CommunHellenbrand M +2 more
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Design of Low-Latency Layered Normalized Minimum Sum Low-Density Parity-Check Decoding Based on Entropy Feature for NAND Flash-Memory Channel. [PDF]
Entropy (Basel)Li Y, Hu H.
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Emerging Nonvolatile Memory Technologies in the Future of Microelectronics. [PDF]
ACS OmegaKatehi L +5 more
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A Novel Channel Preparation Scheme to Optimize Program Disturbance in Three-Dimensional NAND Flash Memory. [PDF]
Micromachines (Basel)You K, Jin L, Jia J, Huo Z.
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Demonstration of In-Memory Biosignal Analysis: Novel High-Density and Low-Power 3D Flash Memory Array for Arrhythmia Detection. [PDF]
Adv Sci (Weinh)Kim J +8 more
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Role of the channel on the memory window of HfZrO<sub>x</sub> ferroelectric field-effect transistors with p-type Si-doped InZnO<sub>x</sub> channel. [PDF]
Sci RepPark H, Lim S, Lee S, Lee JW, Woo J.
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