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Characteristics of Junctionless Charge Trap Flash Memory for 3D Stacked NAND Flash
Journal of Nanoscience and Nanotechnology, 2013The electrical characteristics of tunnel barrier engineered-charge trap flash (TBE-CTF) memory devices with junctionless (JL) source and drain (S/D) were investigated. The JL structure is composed of an n(+)-poly-Si based ultra-thin channel and S/D with identical doping concentrations.
Jinho, Oh +3 more
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2018
Nowadays, Solid State Drives consume an enormous amount of NAND Flash memories [1] causing a restless pressure on increasing the number of stored bits per mm2. Planar memory cells have been scaled for decades by improving process technology, circuit design, programming algorithms [2], and lithography.
Rino Micheloni +2 more
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Nowadays, Solid State Drives consume an enormous amount of NAND Flash memories [1] causing a restless pressure on increasing the number of stored bits per mm2. Planar memory cells have been scaled for decades by improving process technology, circuit design, programming algorithms [2], and lithography.
Rino Micheloni +2 more
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3D Stacked NAND Flash Memories
2016Market request for bigger and cheaper NAND Flash memories triggers continuous research activity for cell size shrinkage. For many years, workarounds for all the scalability issues of planar Flash memories have been found. Some examples are the improved programming algorithms for controlling electrostatic interference between adjacent cells [6], and the
Rino Micheloni, Luca Crippa
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Vertical-channel stacked array (VCSTAR) for 3D NAND flash memory
2011 International Semiconductor Device Research Symposium (ISDRS), 2011Abstract A novel three-dimensional (3D) NAND flash memory, VCSTAR (Vertical-Channel STacked ARray), is investigated. The proposed device is a vertical channel structure having stacked word-lines to achieve high memory density without shrinking cell channel length.
Se Hwan Park +4 more
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3D-NAND Flash memory and technology
2019This chapter introduces the design of three-dimensional (3D) NAND flash memory with the implications from the system side. For conventional two-dimensional (2D) scaling, it is facing various limitations such as lithography cost and cell-to-cell coupling interference. To sustain the trend of bit-cost reduction beyond 10 nm technology node, 3D NAND flash
Chao Sun, Ken Takeuchi
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Characterization of Inter-Cell Interference in 3D NAND Flash Memory
IEEE Transactions on Circuits and Systems I: Regular Papers, 2021We characterize inter-cell interference in commercial three-dimensional NAND flash memory. By writing random data into 3D NAND and collecting sample means and sample variances of cell values corresponding to a particular set of input values in fixed relative neighboring cell locations, it is shown that the interference coming from any target cell ...
Suk Kwang Park, Jaekyun Moon
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3D Floating Gate NAND Flash Memories
2016Planar NAND Flash memories (commercially available) are based on Floating Gate, which has been developed and engineered for many decades. Therefore, there have been many attempts to develop 3D Floating Gate cells in order to re-use all the know-how cumulated over time.
Rino Micheloni, Luca Crippa
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Reliability of 3D NAND Flash Memories
2016In this chapter the main reliability mechanisms affecting 3D NAND memories will be addressed, providing a comparison between 3D FG and 3D CT devices in terms of reliability and expected performances. Starting from an analysis of basic reliability issues related to both physical and architectural aspects affecting NAND memories, the specific physical ...
GROSSI, Alessandro +2 more
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Study on cell shape in 3D NAND flash memory
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015All kinds of cell structures are appeared in 3D NAND flash technologies and all seem to be promising. In this paper, detail comparisons among the cell structures of them are presented. The theoretical derivation and simulation results both support that the cylindrical cell structure has better program/erase speed and memory window.
Wei Feng, Nine Deng
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Secondary Particles Generated by Protons in 3-D nand Flash Memories
IEEE Transactions on Nuclear Science, 2022We studied the secondary byproducts created by high-energy protons inside an SEU detector based on 3D NAND Flash memories, extending the previously developed methodology used for detecting heavy ions. The radiation response of the SEU monitor was discussed as a function of proton energy, analyzing parameters such as the number of clusters per particle,
M. Bagatin +8 more
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