Effects of Hydrolysis Reaction and Abrasive Drag Force Accelerator on Enhancing Si-Wafer Polishing Rate and Improving Si-Wafer Surface Roughness. [PDF]
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Decoupling polarization and coercive field in AlScN/AlN/AlScN stack for enhanced performance in ferroelectric thin-film transistors. [PDF]
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Nanogate ferroelectric transistors with ultralow operation voltage of 0.6 V. [PDF]
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3D-NAND Flash memory and technology
Fifteenth International Symposium on Quality Electronic Design, 2019Solid-state drives (SSDs) have a growing trend of replacing hard disk drives (HDDs) in large computing systems to meet the requirements of power and space. Data in SSD are stored in NAND flash memory cells. Since 2-dimensional (2D) scaling is facing various limitations, 3D-NAND flash memory architectures have been proposed to maintain the trend of bit ...
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