Results 141 to 150 of about 3,421,577 (197)

Analysis of the Ambipolar Conduction of Tin Monoxide Thin-Film Transistors with Indium Tin Oxide Electrodes. [PDF]

ACS Appl Mater Interfaces
Mun SA, Park S, Lee MH, Lee Y, Kang S, Choi J, Ham J, Choi J, Hwang CS.   +8 more
europepmc   +1 more source

Reconfigurable Physical Unclonable Function-Based Cryptographic Scheme Based on Memory-Enabled GFET Modulators. [PDF]

Small Methods
Ren Y, Sun CH, De Silva M, Lee ZR, Yang M, Alshahrani S, Chen JC, Cheng MM, Miller CS, Divan R, Zhou Z, Chen PY.   +11 more
europepmc   +1 more source

A reconfigurable hardware infrastructure for evaluating PUFs in non-volatile memories. [PDF]

HardwareX
Frank F, Katzenbeisser S.
europepmc   +1 more source

Two-Dimensional Materials, the Ultimate Solution for Future Electronics and Very-Large-Scale Integrated Circuits. [PDF]

Nanomicro Lett
Qin L, Wang L.
europepmc   +1 more source

Progress of emerging non-volatile memory technologies in industry. [PDF]

MRS Commun
Hellenbrand M, Teck I, MacManus-Driscoll JL.   +2 more
europepmc   +1 more source

Neuromorphic In-Memory Computing for Marine Visual-Auditory Perception. [PDF]

Adv Mater
Deng Q, Chen W, Liu X, Sun Y, Huo N.
europepmc   +1 more source

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Trends and Future Challenges of 3D NAND Flash Memory

2023 IEEE International Memory Workshop (IMW), 2023
Jaihyuk Song
exaly   +2 more sources

3D-NAND Flash memory and technology

Fifteenth International Symposium on Quality Electronic Design, 2019
Solid-state drives (SSDs) have a growing trend of replacing hard disk drives (HDDs) in large computing systems to meet the requirements of power and space. Data in SSD are stored in NAND flash memory cells. Since 2-dimensional (2D) scaling is facing various limitations, 3D-NAND flash memory architectures have been proposed to maintain the trend of bit ...
Chao Sun 0001, Ayumi Soga, Takahiro Onagi, Koh Johguchi, Ken Takeuchi   +4 more
openaire   +2 more sources

Characterization of Inter-Cell Interference in 3D NAND Flash Memory

IEEE Transactions on Circuits and Systems I: Regular Papers, 2021
We characterize inter-cell interference in commercial three-dimensional NAND flash memory. By writing random data into 3D NAND and collecting sample means and sample variances of cell values corresponding to a particular set of input values in fixed relative neighboring cell locations, it is shown that the interference coming from any target cell ...
Sukkwang Park, Jaekyun Moon
openaire   +2 more sources

3D NAND Flash Memories

2018
Nowadays, Solid State Drives consume an enormous amount of NAND Flash memories [1] causing a restless pressure on increasing the number of stored bits per mm2. Planar memory cells have been scaled for decades by improving process technology, circuit design, programming algorithms [2], and lithography.
Rino Micheloni, Seiichi Aritome, Luca Crippa   +2 more
openaire   +1 more source