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3D VG-Type NAND Flash Memories
2016The common feature among the different 3D NAND solutions is constituted by very deep vertical (z direction) etching steps that define the Flash cells geometries simultaneously. Transistor geometries are formed by the deep trench through a multiple polysilicon/oxide stack.
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Characterization and Analysis of Bit Errors in 3D TLC NAND Flash Memory
2019 IEEE International Reliability Physics Symposium (IRPS), 20193D NAND flash memory has entered dynamically into the space of enterprise server and storage systems, offering significantly higher capacity and better endurance than the latest 2D technology node. Moreover, the advancements in vertical stacking, cell design and program/read algorithms, have also enabled TLC 3D NAND flash with enterprise-level ...
Nikolaos Papandreou +9 more
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Impact of etch angles on cell characteristics in 3D NAND flash memory
Microelectronics Journal, 2018Abstract We investigated the impact of etch angles on cell characteristics of 3D NAND flash memory structures. The cell characteristics were extracted from simulations with an empirical etch profile, which was analyzed through comparisons to completely vertical conditions.
Young-Taek Oh +6 more
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Vertical-channel stacked array (VCSTAR) for 3D NAND flash memory
2011 International Semiconductor Device Research Symposium (ISDRS), 2011Abstract A novel three-dimensional (3D) NAND flash memory, VCSTAR (Vertical-Channel STacked ARray), is investigated. The proposed device is a vertical channel structure having stacked word-lines to achieve high memory density without shrinking cell channel length.
Se Hwan Park +4 more
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Multilevel In-Memory-Searching in 3D NAND-Flash Memory
Extended Abstracts of the 2022 International Conference on Solid State Devices and Materials, 2022Po Hao Tseng +9 more
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In-Memory Approximate Computing Architecture Based on 3D-NAND Flash Memories
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022Po-Hao Tseng +8 more
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Layer-to-Layer Endurance Variation of 3D NAND Flash Memory
2022 IEEE International Reliability Physics Symposium (IRPS), 2022Md Raquibuzzaman +3 more
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Enabling 3D NAND Trench Cells for Scaled Flash Memories
2023 IEEE International Memory Workshop (IMW), 2023S. Rachidi +8 more
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Accelerating Sub-Block Erase in 3D NAND Flash Memory
2021 IEEE 39th International Conference on Computer Design (ICCD), 2021Hongbin Gong, Zhirong Shen, Jiwu Shu
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