Results 21 to 30 of about 485 (168)

Modeling of 3D NAND Characteristics for Cross‐Temperature by Using Graph Neural Network and Its Application

Advanced Intelligent Systems, 2023
Herein, the impact of cross‐temperature on 3D NAND flash memory is modeled by considering adjacent cells using machine learning. The cells comprising NAND flash memory exhibit diverse states and connectivity patterns.
Kyeongrae Cho, Jeong-Sik Lee, Chanyang Park, Hyeok Yun, Hyundong Jang, Seungjoon Eom, Min Sang Park, Hyun-Chul Choi, Rock-Hyun Baek   +8 more
doaj   +1 more source

Analytical Modeling of 3D NAND Flash Cell With a Gaussian Doping Profile

IEEE Access, 2022
The incessantly increasing demand for highly dense storage medium in this era of big-data has led to the development of 3D NAND Flash memories. 3D NAND Flash based SSDs have revolutionized edge storage and become an integral part of the data warehouses ...
Amit Kumar, Raushan Kumar, Shubham Sahay
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Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization

IEEE Journal of the Electron Devices Society, 2022
In flash memory technology, mechanical stress is considered as one of the major factors that can influence the device performance. Furthermore, mechanical stress can have a greater impact on the electrical performance in 3D NAND than in 2D NAND because ...
Eun-Kyeong Jang, Ik-Jyae Kim, Cheon An Lee, Chiweon Yoon, Jang-Sik Lee   +4 more
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Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories

Micromachines, 2021
Temperature effects should be well considered when designing flash-based memory systems, because they are a fundamental factor that affect both the performance and the reliability of NAND flash memories.
Fei Chen, Bo Chen, Hongzhe Lin, Yachen Kong, Xin Liu, Xuepeng Zhan, Jiezhi Chen   +6 more
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Analytical Modeling of Threshold Voltage and Subthreshold Slope for 3-D NAND Flash Memory With a Non-Uniform Doping Profile

IEEE Journal of the Electron Devices Society, 2023
The emergence of data-driven technologies including Internet of Things (IoT), artificial intelligence (AI), and cloud computing has led to a surge in data generation and mining.
Amit Kumar, Shubham Sahay
doaj   +1 more source

Hydrogen Source and Diffusion Path for Poly-Si Channel Passivation in Xtacking 3D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2020
Poly-Si channels need well passivated by using hydrogen passivation process in 3D NAND flash memories for better poly-Si quality with low trap density.
Xinshuai Shen, Zhiliang Xia, Tao Yang, Lei Liu, Jinwen Dong, Wenxi Zhou, Chunlong Li, Zongliang Huo   +7 more
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A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2022
Experimental results indicate that the conventional program suspend scheme in 3D NAND flash memory chip can generate unexpected additional read fail bits and reduce the reliability of 3D NAND flash memory. These extra read fail bits are observed when the
Zhichao Du, Zhipeng Dong, Kaikai You, Xinlei Jia, Ye Tian, Yu Wang, Zhaochun Yang, Xiang Fu, Fei Liu, Qi Wang, Lei Jin, Zongliang Huo   +11 more
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3D NAND flash memory based on junction-less a-Si:H channel with high on/off current ratio

AIP Advances, 2022
As the key hardware unit of computing in memory, 3D NAND flash memory has been the focus of the artificial intelligence (AI) era due to its high efficiency in processing massive and diverse data, which is superior to the conventional von-Neumann ...
Xinyue Yu, Zhongyuan Ma, Kangmin Leng, Tong Chen, Wei Li, Kunji Chen, Jun Xu, Ling Xu   +7 more
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Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND Flash

IEEE Journal of the Electron Devices Society, 2021
Reading data at a temperature which different from writing can cause a large number of failed bits in 3D NAND Flash memory. In this work, the threshold voltage (Vth) temperature effect of 3D NAND flash memory cell was investigated and a method was ...
Dan Wu, Hailong You, Xiaoguang Wang, Shujing Zhong, Qi Sun   +4 more
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A novel gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance with disturbance-less program operation

Memories - Materials, Devices, Circuits and Systems, 2023
In this paper, we propose a gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance and reliability. First, in the selected string, we confirmed that the proposed structure can improve program performance using negative ...
Jae-Min Sim, In-Ku Kang, Sung-In Hong, Changhan Kim, Changhyun Cho, Kyunghoon Min, Yun-Heub Song   +6 more
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