Results 21 to 30 of about 802 (202)
MoS2 Channel‐Enhanced High‐Density Charge Trap Flash Memory and Machine Learning‐Assisted Sensing Methodologies for Memory‐Centric Computing Systems [PDF]
Advanced ScienceDriven by the shift of artificial intelligence (AI) workloads to edge devices, there is a growing demand for nonvolatile memory solutions that offer high‐density, low‐power consumption, and reliability.
Ki Han Kim +7 more
doaj +2 more sources
Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next‐Generation High‐Density Storage Systems [PDF]
Advanced ScienceMultilevel storage and low‐voltage operation position ferroelectric transistors as promising candidates for next‐generation nonvolatile memory. Among them, gate‐injection‐type ferroelectric transistors offer improved vertical scalability and power ...
Giuk Kim +12 more
doaj +2 more sources
Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices
Computers, 2017 We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field.
Alessandro S. Spinelli +2 more
doaj +3 more sources
A Review of Cell Operation Algorithm for 3D NAND Flash Memory
Applied Sciences, 2022 The size of the memory market is expected to continue to expand due to the digital transformation triggered by the fourth industrial revolution. Among various types of memory, NAND flash memory has established itself as a major data storage medium based ...
Jong Kyung Park, Sarah Eunkyung Kim
doaj +2 more sources
Random Telegraph Noise in 3D NAND Flash Memories [PDF]
Micromachines, 2021 In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon channels on current transport.
Sottocornola Spinelli A. +3 more
openaire +3 more sources
Advanced Intelligent Systems, 2023 Herein, the impact of cross‐temperature on 3D NAND flash memory is modeled by considering adjacent cells using machine learning. The cells comprising NAND flash memory exhibit diverse states and connectivity patterns.
Kyeongrae Cho +8 more
doaj +1 more source
Analytical Modeling of 3D NAND Flash Cell With a Gaussian Doping Profile
IEEE Access, 2022 The incessantly increasing demand for highly dense storage medium in this era of big-data has led to the development of 3D NAND Flash memories. 3D NAND Flash based SSDs have revolutionized edge storage and become an integral part of the data warehouses ...
Amit Kumar, Raushan Kumar, Shubham Sahay
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2022 In flash memory technology, mechanical stress is considered as one of the major factors that can influence the device performance. Furthermore, mechanical stress can have a greater impact on the electrical performance in 3D NAND than in 2D NAND because ...
Eun-Kyeong Jang +4 more
doaj +1 more source
Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories
Micromachines, 2021 Temperature effects should be well considered when designing flash-based memory systems, because they are a fundamental factor that affect both the performance and the reliability of NAND flash memories.
Fei Chen +6 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2023 The emergence of data-driven technologies including Internet of Things (IoT), artificial intelligence (AI), and cloud computing has led to a surge in data generation and mining.
Amit Kumar, Shubham Sahay
doaj +1 more source