Results 11 to 20 of about 3,421,577 (197)

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors [PDF]

Sensors, 2023
Three-dimensional NAND flash memory is widely used in sensor systems as an advanced storage medium that ensures system stability through fast data access. However, in flash memory, as the number of cell bits increases and the process pitch keeps scaling,
Hanshui Fan, Xuan Tian, Huiting Peng, Yinfeng Shen, Liang Li, Ming Li, Liming Gao   +6 more
doaj   +3 more sources

Architectural and Integration Options for 3D NAND Flash Memories [PDF]

Computers, 2017
Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Rino Micheloni, Luca Crippa, Cristian Zambelli, Piero Olivo   +3 more
doaj   +6 more sources

Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory [PDF]

Micromachines, 2023
The instability in threshold voltage (VTH) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated.
Donghyun Go, Gilsang Yoon, Jounghun Park, Donghwi Kim, Jiwon Kim, Jungsik Kim, Jeong-Soo Lee   +6 more
doaj   +3 more sources

Modeling of Threshold Voltage Distribution in 3D NAND Flash Memory

2021 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2021
3D NAND flash memory faces unprecedented complicated interference than planar NAND flash memory, resulting in more concern regarding reliability and performance. Stronger error correction code (ECC) and adaptive reading strategies are proposed to improve
Fei Wu, Meng Zhang, Jian Zhou, Wu, Fei,, Changsheng Xie, Zhang, Meng,, Liu, Weihua,, Yang, Chengmo,, Xie, Changsheng,, Weihua Liu, Zhonghai Lu, Lu, Zhonghai,, Chengmo Yang, Wang, Yu,, Yu Wang, Zhou, Jian,   +15 more
core   +2 more sources

Analysis of HBM Failure in 3D NAND Flash Memory

Electronics, 2022
Electrostatic discharge (ESD) events are the main factors impacting the reliability of NAND Flash memory. The behavior of human body model (HBM) failure and the corresponding physical mechanism of 3D NAND Flash memory are investigated in this paper.
Xin Wang, Biruo Song, Lei Jin, Fei Liu, Zhiguo Li, Zongliang Huo, Xiang Fu   +6 more
core   +2 more sources

Reliability challenges in 3D NAND Flash memories

2019 IEEE 11th International Memory Workshop (IMW), 2019
The reliability of 3D NAND Flash memory technology is depending on many factors. Most of them are related to the process-induced variability of the layers. Endurance, data retention capabilities, and cross-temperature immunity are the metrics that become
Cristian Zambelli, Rino Micheloni, Micheloni R., Olivo P., Piero Olivo, Zambelli C.   +5 more
core   +3 more sources

A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories [PDF]

Micromachines, 2021
Data randomization has been a widely adopted Flash Signal Processing technique for reducing or suppressing errors since the inception of mass storage platforms based on planar NAND Flash technology.
Michele Favalli, Cristian Zambelli, Alessia Marelli, Rino Micheloni, Piero Olivo   +4 more
doaj   +3 more sources

Systematic Analysis of Spacer and Gate Length Scaling on Memory Characteristics in 3D NAND Flash Memory

Applied Sciences
This study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improved ...
Hee Young Bae, Seul Ki Hong, Jong Kyung Park   +2 more
doaj   +2 more sources

Two‐Dimensional Flash Memory: Materials, Interfaces, and Storage–Computing Convergence [PDF]

Advanced Science, Volume 13, Issue 59, 23 October 2026.
We systematically summarize recent advances in 2D flash memory, highlighting how interface and material engineering can overcome the conventional trade‐offs among speed, power consumption, and reliability in silicon‐based flash, and outlining its potential for high‐performance memory and in‐memory computing applications.
Zhiyuan Wang, Fanyi Meng, Fanying Meng, Shida Huo, Junxi Xu, Yaohui Wang, Yuexuan Ma, Yuan Xie, Xiaodong Hu, Caofeng Pan, Enxiu Wu   +10 more
wiley   +2 more sources

Smart Electrical Screening Methodology for Channel Hole Defects of 3D Vertical NAND (VNAND) Flash Memory

Eng
In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim, Gyeongseob Seo, Myungsuk Kim   +2 more
doaj   +2 more sources