Architectural and Integration Options for 3D NAND Flash Memories [PDF]
Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Rino Micheloni +3 more
doaj +5 more sources
A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories [PDF]
Data randomization has been a widely adopted Flash Signal Processing technique for reducing or suppressing errors since the inception of mass storage platforms based on planar NAND Flash technology.
Michele Favalli +4 more
doaj +3 more sources
Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability [PDF]
Three-dimensional charge-trapping (CT) NAND flash memory has attracted extensive attention owing to its unique merits, including huge storage capacities, large memory densities, and low bit cost.
Xuesong Zheng +6 more
doaj +2 more sources
Wordline Input Bias Scheme for Neural Network Implementation in 3D-NAND Flash [PDF]
In this study, we propose a neuromorphic computing system based on a 3D-NAND flash architecture that utilizes analog input voltages applied through wordlines (WLs).
Hwiho Hwang +3 more
doaj +2 more sources
A Review of Cell Operation Algorithm for 3D NAND Flash Memory
The size of the memory market is expected to continue to expand due to the digital transformation triggered by the fourth industrial revolution. Among various types of memory, NAND flash memory has established itself as a major data storage medium based ...
Jong Kyung Park, Sarah Eunkyung Kim
doaj +3 more sources
MoS2 Channel‐Enhanced High‐Density Charge Trap Flash Memory and Machine Learning‐Assisted Sensing Methodologies for Memory‐Centric Computing Systems [PDF]
Driven by the shift of artificial intelligence (AI) workloads to edge devices, there is a growing demand for nonvolatile memory solutions that offer high‐density, low‐power consumption, and reliability.
Ki Han Kim +7 more
doaj +2 more sources
Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next‐Generation High‐Density Storage Systems [PDF]
Multilevel storage and low‐voltage operation position ferroelectric transistors as promising candidates for next‐generation nonvolatile memory. Among them, gate‐injection‐type ferroelectric transistors offer improved vertical scalability and power ...
Giuk Kim +12 more
doaj +2 more sources
Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices
We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field.
Alessandro S. Spinelli +2 more
doaj +3 more sources
Random Telegraph Noise in 3D NAND Flash Memories [PDF]
In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon channels on current transport.
Sottocornola Spinelli A. +3 more
openaire +3 more sources
Architecture and Process Integration Overview of 3D NAND Flash Technologies
In the past few decades, NAND flash memory has been one of the most successful nonvolatile storage technologies, and it is commonly used in electronic devices because of its high scalability and reliable switching properties.
Geun Ho Lee +3 more
doaj +1 more source

