Results 11 to 20 of about 802 (202)

Architectural and Integration Options for 3D NAND Flash Memories [PDF]

Computers, 2017
Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Rino Micheloni, Luca Crippa, Cristian Zambelli, Piero Olivo   +3 more
doaj   +5 more sources

Modeling of Threshold Voltage Distribution in 3D NAND Flash Memory

2021 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2021
3D NAND flash memory faces unprecedented complicated interference than planar NAND flash memory, resulting in more concern regarding reliability and performance. Stronger error correction code (ECC) and adaptive reading strategies are proposed to improve
Fei Wu, Meng Zhang, Jian Zhou, Wu, Fei,, Changsheng Xie, Zhang, Meng,, Liu, Weihua,, Yang, Chengmo,, Xie, Changsheng,, Weihua Liu, Zhonghai Lu, Lu, Zhonghai,, Chengmo Yang, Wang, Yu,, Yu Wang, Zhou, Jian,   +15 more
core   +2 more sources

Analysis of HBM Failure in 3D NAND Flash Memory

Electronics, 2022
Electrostatic discharge (ESD) events are the main factors impacting the reliability of NAND Flash memory. The behavior of human body model (HBM) failure and the corresponding physical mechanism of 3D NAND Flash memory are investigated in this paper.
Xin Wang, Biruo Song, Lei Jin, Fei Liu, Zhiguo Li, Zongliang Huo, Xiang Fu   +6 more
core   +2 more sources

Smart Electrical Screening Methodology for Channel Hole Defects of 3D Vertical NAND (VNAND) Flash Memory

Eng
In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim, Gyeongseob Seo, Myungsuk Kim   +2 more
doaj   +2 more sources

Reliability challenges in 3D NAND Flash memories

2019 IEEE 11th International Memory Workshop (IMW), 2019
The reliability of 3D NAND Flash memory technology is depending on many factors. Most of them are related to the process-induced variability of the layers. Endurance, data retention capabilities, and cross-temperature immunity are the metrics that become
Cristian Zambelli, Rino Micheloni, Micheloni R., Olivo P., Piero Olivo, Zambelli C.   +5 more
core   +3 more sources

Reliability of 3D NAND Flash Memories

, 2016
In this chapter the main reliability mechanisms affecting 3D NAND memories will be addressed, providing a comparison between 3D FG and 3D CT devices in terms of reliability and expected performances.
C. Zambelli, P. Olivo, A. Grossi, ZAMBELLI, Cristian, OLIVO, Piero, GROSSI, Alessandro   +5 more
core   +2 more sources

Balancing Page Endurance Variation Between Layers to Extend 3D NAND Flash Memory Lifetime. [PDF]

Micromachines (Basel)
With vertical stacking, 3D NAND’s flash memory can achieve continuous capacity growth. However, the endurance variation between the stacked layers becomes more and more significant due to process variation, which will lead to the underutilization ...
Wang J, Fan Y, Du Y, Huang S, Wan Y.
europepmc   +2 more sources

Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability [PDF]

Micromachines
Three-dimensional charge-trapping (CT) NAND flash memory has attracted extensive attention owing to its unique merits, including huge storage capacities, large memory densities, and low bit cost.
Xuesong Zheng, Yifan Wu, Haitao Dong, Yizhi Liu, Pengpeng Sang, Liyi Xiao, Xuepeng Zhan   +6 more
doaj   +2 more sources

Wordline Input Bias Scheme for Neural Network Implementation in 3D-NAND Flash [PDF]

Biomimetics
In this study, we propose a neuromorphic computing system based on a 3D-NAND flash architecture that utilizes analog input voltages applied through wordlines (WLs).
Hwiho Hwang, Gyeonghae Kim, Dayeon Yu, Hyungjin Kim   +3 more
doaj   +2 more sources

Vertical 3D NAND Flash Memory Technology

ECS Transactions, 2011
We've developed Bit Cost Scalable (BiCS) flash technology as a three-dimensional memory for the future ultra high density storage devices, which extremely reduces the chip costs by vertically stacking memory arrays with punch and plug process.
Hideaki Aochi, Akihiro Nitayama
core   +2 more sources