Results 11 to 20 of about 4,190 (193)

A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories [PDF]

open access: yesMicromachines, 2021
Data randomization has been a widely adopted Flash Signal Processing technique for reducing or suppressing errors since the inception of mass storage platforms based on planar NAND Flash technology.
Michele Favalli   +4 more
doaj   +3 more sources

Architectural and Integration Options for 3D NAND Flash Memories [PDF]

open access: yesComputers, 2017
Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Rino Micheloni   +3 more
doaj   +3 more sources

Random Telegraph Noise in 3D NAND Flash Memories [PDF]

open access: yesMicromachines, 2021
In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon channels on current transport.
Sottocornola Spinelli A.   +3 more
openaire   +3 more sources

Architecture and Process Integration Overview of 3D NAND Flash Technologies

open access: yesApplied Sciences, 2021
In the past few decades, NAND flash memory has been one of the most successful nonvolatile storage technologies, and it is commonly used in electronic devices because of its high scalability and reliable switching properties.
Geun Ho Lee   +3 more
doaj   +1 more source

Modeling of 3D NAND Characteristics for Cross‐Temperature by Using Graph Neural Network and Its Application

open access: yesAdvanced Intelligent Systems, 2023
Herein, the impact of cross‐temperature on 3D NAND flash memory is modeled by considering adjacent cells using machine learning. The cells comprising NAND flash memory exhibit diverse states and connectivity patterns.
Kyeongrae Cho   +8 more
doaj   +1 more source

Analytical Modeling of 3D NAND Flash Cell With a Gaussian Doping Profile

open access: yesIEEE Access, 2022
The incessantly increasing demand for highly dense storage medium in this era of big-data has led to the development of 3D NAND Flash memories. 3D NAND Flash based SSDs have revolutionized edge storage and become an integral part of the data warehouses ...
Amit Kumar, Raushan Kumar, Shubham Sahay
doaj   +1 more source

Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization

open access: yesIEEE Journal of the Electron Devices Society, 2022
In flash memory technology, mechanical stress is considered as one of the major factors that can influence the device performance. Furthermore, mechanical stress can have a greater impact on the electrical performance in 3D NAND than in 2D NAND because ...
Eun-Kyeong Jang   +4 more
doaj   +1 more source

Self-Learning Hot Data Prediction: Where Echo State Network Meets NAND Flash Memories [PDF]

open access: yes, 2020
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new ...
Ai, Jiaqiu   +4 more
core   +2 more sources

Analytical Modeling of Threshold Voltage and Subthreshold Slope for 3-D NAND Flash Memory With a Non-Uniform Doping Profile

open access: yesIEEE Journal of the Electron Devices Society, 2023
The emergence of data-driven technologies including Internet of Things (IoT), artificial intelligence (AI), and cloud computing has led to a surge in data generation and mining.
Amit Kumar, Shubham Sahay
doaj   +1 more source

Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories

open access: yesMicromachines, 2021
Temperature effects should be well considered when designing flash-based memory systems, because they are a fundamental factor that affect both the performance and the reliability of NAND flash memories.
Fei Chen   +6 more
doaj   +1 more source

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