Results 51 to 60 of about 10,811 (199)

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory

Advanced Science, EarlyView.
Schematic and key features of the proposed forward‐forward physical unclonable neural network (FF‐PUNN), incorporating a concealable physical unclonable function (PUF) layer and forward‐forward (FF) learning. ABSTRACT The growing use of neural networks in privacy‐sensitive applications necessitates architectures that inherently protect both data and ...
Sung‐Ho Park, Ryun‐Han Koo, Jonghyun Ko, Jiseong Im, Yeongheon Yang, Mingyun Oh, Dongbeen Shin, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source

Trade-offs between Instantaneous and Total Capacity in Multi-Cell Flash Memories [PDF]

, 2012
The limited endurance of flash memories is a major design concern for enterprise storage systems. We propose a method to increase it by using relative (as opposed to fixed) cell levels and by representing the information with Write Asymmetric Memory ...
Bruck, Jehoshua, En Gad, Eyal, Jiang, Anxiao (Andrew)   +2 more
core   +2 more sources

Iterative Pseudo-Soft-Reliability-Based Majority-Logic Decoding for NAND Flash Memory

IEEE Access, 2021
This paper proposes a decoding algorithm for nonbinary low-density parity-check (NB-LDPC) codes, aiming to improve the error rate performance for NAND flash memory. Several NB-LDPC decoding methods for NAND flash memory have been studied. Some approaches
Kyeong Bin Park, Ki-Seok Chung
doaj   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Firmware uploading station for the use in mass production of variable-frequency drives [PDF]

, 2013
Työssä tutustutaan Flash-muistiteknologiaan ja suunnitellaan asema, joka lataa ohjelmiston taajuusmuuttajan Flash-muistiin. Flash-muistien käsittely rajataan kahteen yleisimpään tyyppiin: NAND- ja NOR-muisteihin.
Ainola, Eppu
core  

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Smart Electrical Screening Methodology for Channel Hole Defects of 3D Vertical NAND (VNAND) Flash Memory

Eng
In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim, Gyeongseob Seo, Myungsuk Kim   +2 more
doaj   +1 more source

Investigation of Retention Noise for 3-D TLC NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2019
In this paper, the retention noise [electron emission statistics (EES)] after program operation of 3-D triple-level program cell (TLC) NAND flash memory is investigated.
Kunliang Wang, Gang Du, Zhiyuan Lun, Xiaoyan Liu   +3 more
doaj   +1 more source

Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices

Sensors, 2020
NAND flash memory-based storage devices are vulnerable to errors induced by NAND flash memory cells. Error-correction codes (ECCs) are integrated into the flash memory controller to correct errors in flash memory. However, since ECCs show inherent limits
Seung-Ho Lim, Ki-Woong Park
doaj   +1 more source