Results 61 to 70 of about 29,727 (252)

A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories

open access: yesMicromachines, 2021
Data randomization has been a widely adopted Flash Signal Processing technique for reducing or suppressing errors since the inception of mass storage platforms based on planar NAND Flash technology.
Michele Favalli   +4 more
doaj   +1 more source

A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory

open access: yesIEEE Journal of the Electron Devices Society, 2022
Experimental results indicate that the conventional program suspend scheme in 3D NAND flash memory chip can generate unexpected additional read fail bits and reduce the reliability of 3D NAND flash memory. These extra read fail bits are observed when the
Zhichao Du   +11 more
doaj   +1 more source

Weaving Intelligence: Thermally Drawn Multimaterial Fibers Toward AI‐Enabled Smart Textiles

open access: yesAdvanced Materials, EarlyView.
Thermally drawn multimaterial fibers are rapidly advancing as intelligent structural units for next‐generation smart textiles. Integrating multimaterial architectures with neuromorphic and spiking‐neural‐network principles enables fabrics that can sense, compute, and adapt autonomously.
Vuong Dinh Trung   +9 more
wiley   +1 more source

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

open access: yesAdvanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh   +8 more
wiley   +1 more source

Iterative Pseudo-Soft-Reliability-Based Majority-Logic Decoding for NAND Flash Memory

open access: yesIEEE Access, 2021
This paper proposes a decoding algorithm for nonbinary low-density parity-check (NB-LDPC) codes, aiming to improve the error rate performance for NAND flash memory. Several NB-LDPC decoding methods for NAND flash memory have been studied. Some approaches
Kyeong Bin Park, Ki-Seok Chung
doaj   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Exploring Design Dimensions in Flash-based Mass-memory Devices [PDF]

open access: yes, 2009
Mission-critical space system applications present several issues: a typical one is the design of a mass-memory device (i.e., a solid- state recorder).
Caramia, M.   +4 more
core  

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

Smart Electrical Screening Methodology for Channel Hole Defects of 3D Vertical NAND (VNAND) Flash Memory

open access: yesEng
In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim   +2 more
doaj   +1 more source

Investigation of Retention Noise for 3-D TLC NAND Flash Memory

open access: yesIEEE Journal of the Electron Devices Society, 2019
In this paper, the retention noise [electron emission statistics (EES)] after program operation of 3-D triple-level program cell (TLC) NAND flash memory is investigated.
Kunliang Wang   +3 more
doaj   +1 more source

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