Results 81 to 90 of about 10,811 (199)

Analysis of vertical AND flash memory for energy-efficient, scalable, fast CIM beyond vertical NAND flash memory

open access: yesNano Convergence
Compute-in-memory (CIM) has emerged as a promising solution to mitigate the data movement bottleneck in von Neumann architectures. While vertical NAND (V-NAND) flash memory has been explored for CIM, its structural constraints, including pass-bias ...
Jonghyun Ko   +9 more
doaj   +1 more source

Architectural and Integration Options for 3D NAND Flash Memories

open access: yesComputers, 2017
Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Rino Micheloni   +3 more
doaj   +1 more source

Complex Cryptographic and User‐Centric Physically Unclonable Functions Enabled by Strain‐Sensitive Nanocrystals via Selective Ligand Exchange

open access: yesAdvanced Functional Materials, Volume 36, Issue 23, 19 March 2026.
This study investigates electromechanical PUFs that improve on traditional electric PUFs. The electron transport materials are coated randomly through selective ligand exchange. It produces multiple keys and a key with motion dependent on percolation and strain, and approaches almost ideal inter‐ and intra‐hamming distances.
Seungshin Lim   +7 more
wiley   +1 more source

Exploring Design Dimensions in Flash-based Mass-memory Devices [PDF]

open access: yes, 2009
Mission-critical space system applications present several issues: a typical one is the design of a mass-memory device (i.e., a solid- state recorder).
Caramia, M.   +3 more
core  

Review of Memristors for In‐Memory Computing and Spiking Neural Networks

open access: yesAdvanced Intelligent Systems, Volume 8, Issue 3, March 2026.
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari   +2 more
wiley   +1 more source

High Perpendicular Anisotropy in Mo‐Inserted Mg Composite Free Layer for Nonvolatile Magnetoresistive Random Access Memory in 4K‐400K Universal Temperature Applications

open access: yesSmall, Volume 22, Issue 14, 6 March 2026.
A universal temperature‐friendly nonvolatile MRAM (UTF‐NVMRAM) operating from 4 to 400K is realized by optimizing the MgO/MgOx capping layer and incorporating Mo into the CoFeB composite‐free layer. This architecture minimizes temperature sensitivity in switching voltage and thermal stability factor while demonstrating potential CMOS back‐end‐of‐line ...
Ming‐Chun Hong   +21 more
wiley   +1 more source

Self-Organizing Mapping Neural Network Implementation Based on 3-D NAND Flash for Competitive Learning

open access: yesIEEE Journal of the Electron Devices Society
Self-organizing Map (SOM) neural network is a prominent algorithm in unsupervised machine learning, which is widely used for data clustering, high-dimensional visualization, and feature extraction.
Anyi Zhu   +4 more
doaj   +1 more source

A Cache Management Strategy to Replace Wear Leveling Techniques for Embedded Flash Memory

open access: yes, 2011
Prices of NAND flash memories are falling drastically due to market growth and fabrication process mastering while research efforts from a technological point of view in terms of endurance and density are very active. NAND flash memories are becoming the
Boukhobza, Jalil   +2 more
core   +1 more source

Toward a Unified Performance and Power Consumption NAND Flash Memory Model of Embedded and Solid State Secondary Storage Systems

open access: yes, 2013
This paper presents a set of models dedicated to describe a flash storage subsystem structure, functions, performance and power consumption behaviors. These models cover a large range of today's NAND flash memory applications.
Boukhobza, Jalil   +2 more
core   +1 more source

Polar-Coded Forward Error Correction for MLC NAND Flash Memory Polar FEC for NAND Flash Memory

open access: yes, 2018
With the ever-growing storage density, high-speed, and low-cost data access, flash memory has inevitably become popular. Multi-level cell (MLC) NAND flash memory, which can well balance the data density and memory stability, has occupied the largest market share of flash memory.
Song, Haochuan   +6 more
openaire   +2 more sources

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