Results 91 to 100 of about 1,986,606 (160)

Reliability of NAND Flash Memories

, 2010
The continuous demand for NAND flash memories with higher performance and storage capabilities pushes the manufactures towards the limits of present technologies and to explore new solutions, both from the physical and the architectural point of view ...
ZAMBELLI, Cristian, OLIVO, Piero, CHIMENTON, Andrea   +2 more
core  

ACF-packaged ultrathin Si-based flexible NAND flash memory

, 2015
In this paper, we demonstrate an ACF-packaged ultrathin Si-based flexible NAND flash memory by adopting a simple method, without using a conventional transfer process.
Yoo, Hyeon Gyun, Kim, Do Hyun, Daniel J. Joe, Hyeon Gyun Yoo, Joe, Daniel J., Do Hyun Kim, Keon Jae Lee, Lee, Keon Jae   +7 more
core   +1 more source

Unsupervised Context Adaptation With Attention for Estimating Threshold Voltage Distributions Under Process Variation

IEEE Access
NAND flash memory is a type of non-volatile memory that provides high-density storage capacity with fast read and write operations. However, increasing storage capacity and density lead to significant data reliability degradation.
Inhyuk Choi, Minyoung Hwang, Jeongju Jee, Hyuncheol Park   +3 more
doaj   +1 more source

Leveraging the page buffer data cache for enhanced programmability in NAND flash memories with on‐chip microcontrollers

Electronics Letters
This paper proposes a simple yet effective scheme for NAND Flash memories that employ on‐chip microcontroller units (MCUs) to manage internal array operations.
Geonu Kim
doaj   +1 more source

A Novel Program Scheme for Z-Interference Improvement in 3D NAND Flash Memory. [PDF]

Micromachines (Basel), 2023
Jia J, Jin L, Jia X, You K.
europepmc   +1 more source

Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory. [PDF]

Micromachines (Basel), 2023
You K, Jin L, Jia J, Huo Z.
europepmc   +1 more source

Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory. [PDF]

Micromachines (Basel), 2023
An U, Yoon G, Go D, Park J, Kim D, Kim J, Lee JS.   +6 more
europepmc   +1 more source

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors. [PDF]

Sensors (Basel), 2023
Fan H, Tian X, Peng H, Shen Y, Li L, Li M, Gao L.   +6 more
europepmc   +1 more source

Estimation method for bit upset ratio of NAND flash memory induced by heavy ion irradiation

AIP Advances
In order to estimate the bit upset ratio of NAND flash memory induced by heavy ion irradiation, starting from the physical mechanism of the bit upset of NAND flash memory, an analytical model based on statistical methods was developed to describe the ...
Jiangkun Sheng, Mengtong Qiu, Peng Xu, Lili Ding, Yinhong Luo, Zhibin Yao, Fengqi Zhang, Shilong Gou, Zujun Wang, Yuanyuan Xue   +9 more
doaj   +1 more source

Novel Program Scheme of Vertical NAND Flash Memory for Reduction of Z-Interference. [PDF]

Micromachines (Basel), 2021
Yi SI, Kim J.
europepmc   +1 more source