Results 91 to 100 of about 10,811 (199)

Flash-memories in Space Applications: Trends and Challenges [PDF]

, 2009
Nowadays space applications are provided with a processing power absolutely overcoming the one available just a few years ago. Typical mission-critical space system applications include also the issue of solid-state recorder(s).
Caramia, M., Di Carlo, Stefano, Fabiano, Michele, Prinetto, Paolo Ernesto   +3 more
core  

Dependability Assessment of NAND Flash-memory for Mission-critical Applications [PDF]

It is a matter of fact that NAND flash memory devices are well established in consumer market. However, it is not true that the same architectures adopted in the consumer market are suitable for mission critical applications like space.
Fabiano, Michele
core  

Leveraging the page buffer data cache for enhanced programmability in NAND flash memories with on‐chip microcontrollers

Electronics Letters
This paper proposes a simple yet effective scheme for NAND Flash memories that employ on‐chip microcontroller units (MCUs) to manage internal array operations.
Geonu Kim
doaj   +1 more source

Protograph QC-LDPC and Rate-Adaptive Polar Codes Design for MLC NAND Flash Memories

IEEE Access, 2019
A protograph-based quasi-cyclic (QC) low-density parity-check (LDPC) code for multi-level cell (MLC) NAND flash memories is proposed in this paper. In this design approach, the quantized voltage signals are measured for soft decoding because the exact ...
Lingjun Kong, Yahui Liu, Haiyang Liu, Shengmei Zhao   +3 more
doaj   +1 more source

A Novel Program Scheme for Z-Interference Improvement in 3D NAND Flash Memory. [PDF]

Micromachines (Basel), 2023
Jia J, Jin L, Jia X, You K.
europepmc   +1 more source

Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory. [PDF]

Micromachines (Basel), 2023
You K, Jin L, Jia J, Huo Z.
europepmc   +1 more source

Estimation method for bit upset ratio of NAND flash memory induced by heavy ion irradiation

AIP Advances
In order to estimate the bit upset ratio of NAND flash memory induced by heavy ion irradiation, starting from the physical mechanism of the bit upset of NAND flash memory, an analytical model based on statistical methods was developed to describe the ...
Jiangkun Sheng, Mengtong Qiu, Peng Xu, Lili Ding, Yinhong Luo, Zhibin Yao, Fengqi Zhang, Shilong Gou, Zujun Wang, Yuanyuan Xue   +9 more
doaj   +1 more source

Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory. [PDF]

Micromachines (Basel), 2023
An U, Yoon G, Go D, Park J, Kim D, Kim J, Lee JS.   +6 more
europepmc   +1 more source

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors. [PDF]

Sensors (Basel), 2023
Fan H, Tian X, Peng H, Shen Y, Li L, Li M, Gao L.   +6 more
europepmc   +1 more source

A TID and SEE Characterization of Multi-Terabit COTS 3D NAND Flash [PDF]

Single-event effects and total ionizing dose testing is described for a 32-layer NAND flash memory, in both SLC and MLC configurations, with special considerations for unique three-dimensional test ...
Campola, Michael J., Wilcox, Edward P.
core   +1 more source