Results 91 to 100 of about 29,727 (252)

An efficient fault detection algorithm for NAND flash memory

, 2011
As flash memory gains its momentum in the storage market of embedded systems, existing fault detection algorithms face serious challenges due to the special characteristics of NAND flash memory and the rapid degradation of its reliability.
Tei-Wei Kuo, Chia-Ling Ko, Chih-Wen Hsueh, Po-Chun Huang, Yuan-Hao Chang   +4 more
core   +1 more source

Magnetic Field‐Modulated Boolean Logic in Proteinoid‐ Fe3 O4 Hybrid Materials

Advanced Physics Research, Volume 5, Issue 5, May 2026.
Proteinoid‐Fe3O4${\rm Fe}_3{\rm O}_4$. nanoparticle composites exhibit spontaneous electrical oscillations that emulate Boolean logic gates (AND, OR, XOR, NAND, NOR, NOT) under magnetic field modulation. External fields of 65.103 mT tune oscillatory behavior: 84 mT enhances amplitude while 103 mT suppresses it.
Panagiotis Mougkogiannis, Andrew Adamatzky   +1 more
wiley   +1 more source

Polar-Coded Forward Error Correction for MLC NAND Flash Memory Polar FEC for NAND Flash Memory

CoRR, 2018
With the ever-growing storage density, high-speed, and low-cost data access, flash memory has inevitably become popular. Multi-level cell (MLC) NAND flash memory, which can well balance the data density and memory stability, has occupied the largest market share of flash memory.
Haochuan Song, Frankie Fu, Cloud Zeng, Jin Sha 0001, Zaichen Zhang, Xiaohu You 0001, Chuan Zhang 0001   +6 more
openaire   +2 more sources

Molecular Design Toward High‐Performance Solution‐Processable Push–Pull Zinc(II) Porphyrin‐Based Resistive Memory Devices: From Binary to Ternary Memory Behavior

Small Science, Volume 6, Issue 5, May 2026.
A series of zinc(II) porphyrin‐based D−A complexes is employed to fabricate solution‐processable resistive memory devices. The utilization of an electron‐donating π‐bridge or a weak electron‐donating moiety is able to turn on an extra resistive state to realize ternary memory performance, demonstrating the relationship between memory behavior and ...
Ka Wai Kwong, Hing Chan, Ming‐Yi Leung, Eugene Yau‐Hin Hong, Shiu‐Lun Lai, Vivian Wing‐Wah Yam   +5 more
wiley   +1 more source

Architectural and Integration Options for 3D NAND Flash Memories

Computers, 2017
Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Rino Micheloni, Luca Crippa, Cristian Zambelli, Piero Olivo   +3 more
doaj   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, Volume 36, Issue 27, 2 April 2026.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Applying Event and Machine Decomposition to a Flash-Based Filestore in Event-B

, 2009
Event-B is a formal method used for specifying and reasoning about systems. Rodin is a toolset for developing system models in Event-B. Our experiment which is outlined in this paper is aimed at applying Event-B and Rodin to a flash-based filestore ...
Kriangsak Damchoom, Damchoom, Kriangsak, Butler, Michael, Michael Butler   +3 more
core   +1 more source

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Computers, 2017
We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field.
Alessandro S. Spinelli, Christian Monzio Compagnoni, Andrea L. Lacaita   +2 more
doaj   +1 more source

Temperature‐Induced Nonvolatile Switching through Thermal Hysteresis in a Gd3Fe5O12/Ho3Fe5O12 Exchange‐Coupled Rare‐Earth Iron Garnet Bilayer

Advanced Functional Materials, Volume 36, Issue 29, 9 April 2026.
Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim, Phuoc Cao Van, Jong‐Ryul Jeong, Hyungyu Jin   +3 more
wiley   +1 more source

Dynamic Forest: An Efficient Index Structure for NAND Flash Memory

, 2009
In this paper, we present an efficient index structure for NAND flash memory, called the Dynamic Forest (D-Forest). Since write operations incur high overhead on NAND flash memory, D-Forest is designed to minimize write operations for index updates.
Yang, Chul-Woong, Lee, Ki Yong, Lee, Yoon Joon, Kim, Myoung Ho   +3 more
core   +1 more source