Verification of NAND Flash Controller
, 2022 NAND structure-based Flash memory-made SSDs are turning more popular than HDDs in several applications notably in consumer microelectronics devices and enterprise memory storage devices. The NAND controller is the heart of this system.
Prajwala, M. J., He, Lili, Desai, Kush
core
Protograph QC-LDPC and Rate-Adaptive Polar Codes Design for MLC NAND Flash Memories
IEEE Access, 2019 A protograph-based quasi-cyclic (QC) low-density parity-check (LDPC) code for multi-level cell (MLC) NAND flash memories is proposed in this paper. In this design approach, the quantized voltage signals are measured for soft decoding because the exact ...
Lingjun Kong +3 more
doaj +1 more source
Hardware security primitives using NAND flash memory
, 2021 Counterfeit electronics is a serious problem for ensuring the security and reliability of any electronic system. Unfortunately, the number of counterfeit components has increased considerably after the introduction of horizontal semiconductor supply ...
Sakib, Mohammad Sadman
core
Dependability Assessment of NAND Flash-memory for Mission-critical Applications [PDF]
, 2013 It is a matter of fact that NAND flash memory devices are well established in consumer market. However, it is not true that the same architectures adopted in the consumer market are suitable for mission critical applications like space.
FABIANO, MICHELE
core +1 more source
Methods for Threshold Voltage Setting of String Select Transistors in Channel Stacked NAND Flash Memory [PDF]
, 2017 학위논문 (박사)-- 서울대학교 대학원 공과대학 전기·컴퓨터공학부, 2017. 8. 박병국.Since recent mobile electronic devices such as tablets, laptops, smartphones, or solid-state drives (SSDs) have started to adopt the NAND flash memory as their main data storage device, the demand for ...
김도빈
core
Estimation method for bit upset ratio of NAND flash memory induced by heavy ion irradiation
AIP AdvancesIn order to estimate the bit upset ratio of NAND flash memory induced by heavy ion irradiation, starting from the physical mechanism of the bit upset of NAND flash memory, an analytical model based on statistical methods was developed to describe the ...
Jiangkun Sheng +9 more
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A Novel Program Scheme for Z-Interference Improvement in 3D NAND Flash Memory. [PDF]
Micromachines (Basel), 2023 Jia J, Jin L, Jia X, You K.
europepmc +1 more source
The design and implementation of micro disk module by use LBA NAND flash memory
, 2010 碩士本研究目標在於避免智慧型ATA介面控制器在快閃記憶體製程或架構更新時，需重新修正控制器內部對快閃記憶體的錯誤修正能力和記憶體位址管理方式，希望利用新增加的邏輯定址快閃記憶體內含控制器來計算其錯誤校正碼和管理快閃記憶體內部資料位址，以避免智慧型控制器須跟隨著新型快閃記憶體，而改變其內部機制。 目前固態硬碟(Solid State Disk)的主要系統架構是由一顆智慧型ATA介面控制器和快閃記憶體(Flash Memory)所組成 ...
黃仁芳; Huang, Renfang
core
Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory. [PDF]
Micromachines (Basel), 2023 You K, Jin L, Jia J, Huo Z.
europepmc +1 more source
Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory. [PDF]
Micromachines (Basel), 2023 An U +6 more
europepmc +1 more source