Effects of Edge Thinning on Fowler-Nordheim Tunneling Current of NAND-Type Flash Memory Cells
, 2011 The edge thinning of tunnel oxide is numerically found to increase the Fowler-Nordheim (FN) tunneling gate current in NAND-type Flash cells during programming and erasing operations.
Ji-Ting Liang +8 more
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Model-Inversion-Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory. [PDF]
Adv Sci (Weinh)Park SH +8 more
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Dynamic pass bias control for temperature-resilient neural networks using vertical NAND flash memory. [PDF]
Nano ConvergPark SH +11 more
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Balancing Page Endurance Variation Between Layers to Extend 3D NAND Flash Memory Lifetime. [PDF]
Micromachines (Basel)Wang J, Fan Y, Du Y, Huang S, Wan Y.
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a memory-efficient flash translation layer supporting multiple mapping granularities
, 2009 학위논문(석사) - 한국과학기술원 : 전산학전공, 2009.2, [ vi, 47 p. ]NAND flash memory is being widely adopted as a storage medium for embedded devices. FTL (Flash Translation Layer) is one of the most essential software components in NAND flash-based embedded devices as
이용구, Lee, Yong-Goo
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AFTL: An Efficient Adaptive Flash Translation Layer using Hot Data Identifier for NAND Flash Memory
, 2008 NAND , , , , .
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A Novel Channel Preparation Scheme to Optimize Program Disturbance in Three-Dimensional NAND Flash Memory. [PDF]
Micromachines (Basel)You K, Jin L, Jia J, Huo Z.
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Design of Low-Latency Layered Normalized Minimum Sum Low-Density Parity-Check Decoding Based on Entropy Feature for NAND Flash-Memory Channel. [PDF]
Entropy (Basel)Li Y, Hu H.
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ReHypar: a recursive hybrid chunk partitioning method using NAND-flash memory SSD. [PDF]
ScientificWorldJournal, 2014 No J, Park SS, Lim CS.
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Physical Unclonable Function Based on 3D-NAND Flash Array Structure With Multi-Chip Implementation. [PDF]
SmallHwang H, Youn S, Park J, Yu D, Kim H.
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