Performance Analysis of NAND Flash Memory Solid-State Disks [PDF]
As their prices decline, their storage capacities increase, and their endurance improves, NAND Flash Solid-State Disks (SSD) provide an increasingly attractive alternative to Hard Disk Drives (HDD) for portable computing systems and PCs.
Dirik, Cagdas
core
Effects of Edge Thinning on Fowler-Nordheim Tunneling Current of NAND-Type Flash Memory Cells
The edge thinning of tunnel oxide is numerically found to increase the Fowler-Nordheim (FN) tunneling gate current in NAND-type Flash cells during programming and erasing operations.
Ji-Ting Liang +8 more
core +1 more source
Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors. [PDF]
Fan H +6 more
europepmc +1 more source
Coding and signal processing for NAND flash memory
NAND flash memory is a ubiquitous storage medium which has revolutionized the non-volatile memory industry by offering large storage capacity, high data throughput, fast read-response time and low power consumption.
Chaudhry, Adnan Aslam
core +1 more source
Data storage in electronic devices has been revolutionised by 3D NAND flash memory. However, polycrystalline silicon and grain boundaries offer issues that greatly affect memory performance in terms of string current and Program-Erase Threshold Voltage ...
Dikendra Verma +2 more
doaj +1 more source
Channel-Stacked NAND Flash Memory with High-κ Charge Trapping Layer for High Scalability [PDF]
학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2016. 2. 박병국.Exploding demands for mobile devices induce the drastic expansion of the market of NAND flash memory as high density storage devices.
서주연
core
Novel Program Scheme of Vertical NAND Flash Memory for Reduction of Z-Interference. [PDF]
Yi SI, Kim J.
europepmc +1 more source
Automated synthesis of EDACs for FLASH Memories with User-Selectable Correction Capability [PDF]
Piazza, R. +12 more
core +1 more source
Channel Stacked Array NAND Flash Memory With Vertically Stacked String Selection Line (SSL) [PDF]
학위논문 (석사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2012. 8. 박병국.Three-dimensional (3D) stacked memory devices are representative solutions that can lead to reduce bit cost of NAND flash memories. Recently, many groups have proposed various types of 3D stacked NAND flash
서주연
core
Intelligent Read Framework With Meta-Learning for NAND Flash Memory Under Process Variation
The storage density of NAND flash memory has significantly increased due to multi-leveling and downscaling technologies. As a side effect of enhanced storage capacity, flash memory becomes vulnerable to circuit-level noise.
Minyoung Hwang +3 more
doaj +1 more source

