Results 101 to 110 of about 29,727 (252)
Advanced Electronic Materials, Volume 12, Issue 7, 6 April 2026.This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong +4 more
wiley +1 more source
Characterizing 3D Floating Gate NAND Flash
, 2018 As both NAND flash memory manufacturers and users are turning their attentions from planar architecture towards three-dimensional (3D) architecture, it becomes critical and urgent to understand the characteristics of 3D NAND flash memory.
Yue Zhu +7 more
core +1 more source
IEEE Journal of the Electron Devices SocietySelf-organizing Map (SOM) neural network is a prominent algorithm in unsupervised machine learning, which is widely used for data clustering, high-dimensional visualization, and feature extraction.
Anyi Zhu +4 more
doaj +1 more source
ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES
, 2012 Enclosed in this thesis work it can be found the results of a three years long research activity performed during the XXIV-th cycle of the Ph.D. school in Engineering Science of the Università degli Studi di Ferrara. The topic of this work is concerned
Zambelli, Cristian
core
NAND flash memory technologies
, 2016 This book discusses basic and advanced NAND flash memory technologies, including the principle of NAND flash, memory cell technologies, multi-bits cell technologies, scaling challenges of memory cell, reliability, and 3-dimensional cell as the future ...
Aritome, Seiichi
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Analysis of HBM Failure in 3D NAND Flash Memory
, 2022 Electrostatic discharge (ESD) events are the main factors impacting the reliability of NAND Flash memory. The behavior of human body model (HBM) failure and the corresponding physical mechanism of 3D NAND Flash memory are investigated in this paper.
Xin Wang +6 more
core +1 more source
A NOR Emulation Strategy over NAND Flash Memory
, 2007 快閃記憶體大致可分為兩類：NOR型快閃記憶體及NAND型快閃記憶體。一般而言，因為有就地執行（eXecute-In-Place，XIP）和快速讀取等特性，NOR型快閃記憶體應用上適用於儲存程式的可執行檔。而擁有較大容量與較快寫入速度的NAND型快閃記憶體則適用於資料儲存。此外，兩者在成本上有很大的差距，NOR型快閃記憶體相對於NAND型快閃記憶體高出許多。基於市場的趨勢，若能以較具經濟效益的NAND型快閃記憶體取代NOR型快閃，將可大幅地降低成本、提升毛利。在這篇論文中 ...
Lin, Chien-Hung, 林建宏
core
Electronics LettersThis paper proposes a simple yet effective scheme for NAND Flash memories that employ on‐chip microcontroller units (MCUs) to manage internal array operations.
Geonu Kim
doaj +1 more source
Vertical 3D NAND Flash Memory Technology
, 2011 We've developed Bit Cost Scalable (BiCS) flash technology as a three-dimensional memory for the future ultra high density storage devices, which extremely reduces the chip costs by vertically stacking memory arrays with punch and plug process.
Hideaki Aochi, Akihiro Nitayama
core +1 more source
, 2016 V diplomskem delu so predstavljene arhitekturne lastnosti NAND bliskovnih pomnilnikov skupaj z lastnostmi čipov, ki jih vsebujejo. Obravnavane so različne programske metode upravljanja z NAND bliskovnim pomnilnikom, predstavljena pa je ena izmed možnih ...
UMEK, VLADIMIR
core