Results 71 to 80 of about 10,811 (199)

Materials Design Principles for Large Memory Windows: Coercive Voltage Engineering in Ferroelectric– Dielectric Heterostructures

Advanced Electronic Materials, Volume 12, Issue 8, 20 April 2026.
Coercive voltage enhancement in hafnia‐based ferroelectric–dielectric heterostructures is shown to originate from leakage‐governed voltage division between the ferroelectric and dielectric layers. Through experiments, circuit modeling, and defect‐based simulations, a universal framework is established to engineer large memory windows without altering ...
Prasanna Venkatesan, Hari Jayasankar, Salma Soliman, Priyankka Ravikumar, Lance Fernandes, Chinsung Park, Amrit Garlapati, Chengyang Zhang, Sanghyun Kang, Shimeng Yu, Suman Datta, Asif Khan, Mengkun Tian, Zheng Wang, Kijoon Kim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Luca Larcher, Gaurav Thareja, Andrea Padovani   +21 more
wiley   +1 more source

Media Storage Technology Usb Flash Drive [PDF]

, 2003
USB Flash Drive is a type of NAND-type flash memory combined with a 1.1 or USB 2.0 andused as data storage devices smaller and lighter. Because of the sophistication that has madeUSB Flash Drive becoming increasingly popular as an alternative replacement
Irawati, D. R. (Diyah)
core  

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, Volume 2, Issue 2, April 2026.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source

Large‐Scale and Highly Reliable Hopfield Neural Networks Using Vertical NAND Flash Memory for the In‐Memory Associative Computing

Advanced Intelligent Systems, Volume 8, Issue 4, April 2026.
Large‐scale Hopfield neural networks (HNNs) for associative computing are implemented using vertical NAND (VNAND) flash memory. The proposed VNAND HNN with the asynchronous update scenario achieve robust image restoration performance despite fabrication variations, while significantly reducing chip area (≈117× smaller than resistive random‐access ...
Jin Ho Chang, Jae Seung Woo, Suk‐Kang Sung, Ki‐Whan Song, Woo Young Choi   +4 more
wiley   +1 more source

SimpleSSD: Modeling Solid State Drives for Holistic System Simulation

, 2017
Existing solid state drive (SSD) simulators unfortunately lack hardware and/or software architecture models. Consequently, they are far from capturing the critical features of contemporary SSD devices.
Abulila, Ahmed, Jung, Myoungsoo, Kandemir, Mahmut, Kim, Nam Sung, Kwon, Miryeong, Shahidi, Narges, Shalf, John, Zhang, Jie   +7 more
core   +2 more sources

Front Cover: Large‐Scale and Highly Reliable Hopfield Neural Networks Using Vertical NAND Flash Memory for the In‐Memory Associative Computing (Adv. Intell. Syst. 4/2026)

Advanced Intelligent Systems, Volume 8, Issue 4, April 2026.
In‐Memory Associative Computing Large‐scale and highly reliable Hopfield neural networks using vertical NAND flash memory is proposed for the in‐memory associative computing. Owing to vertically stacked structure and sequential page‐by‐page operations, image association is performed within a single memory block.
Jin Ho Chang, Jae Seung Woo, Suk‐Kang Sung, Ki‐Whan Song, Woo Young Choi   +4 more
wiley   +1 more source

Emerging single‐element ferroelectrics: From theory to experiment

InfoMat, Volume 8, Issue 4, April 2026.
This review explores recent developments in single‐element ferroelectrics, covering mechanisms of ferroelectric behavior, their crystal structures, key preparation methods, ferroelectric performance characteristics, and promising device applications in field‐effect transistors, photodetectors, and visual perceptrons.
Run Zhao, Yuhang Zhang, Chen‐Min Dai, Fan Li, Jinlei Zhang, Ju Gao, Yucheng Jiang, Cheng‐Wei Qiu   +7 more
wiley   +1 more source

NAND Flash Memory Characterization

, 2019
The NAND technology has become a popular research area and implementation choice due to its non-volatile flash memory characteristics. There are many engineering challenges when it comes to NAND technology. Some of the limiting factors are reducing the transistor width and increasing read and write performance. The device physics for NAND floating gate
openaire   +1 more source

Recent Advances in Hafnium Oxide Nanomaterials: From Controlled Synthesis, Structure, and Surface Engineering to Biomedical Applications

Rare Metals, Volume 45, Issue 4, April 2026.
ABSTRACT Hafnium oxide (HfO2) nanoparticles (NPs), derived from a rare‐metal element, have gained increasing attention as a versatile class of functional nanostructures with unique optical, dielectric, and surface properties that enable diverse biomedical applications. As a representative rare‐metal oxide, HfO2 NPs with well‐defined architectures offer
Mothana Hussein Tarawneh, Mohammed Ali Dheyab, Azhar Abdul Rahman, Mutaz Mohammad Alsardi, Azlan Abdul Aziz, Saleh T. Alanezi, Wesam Abdullah, Sara Abdulwahab, Mehran Ghasemlou   +8 more
wiley   +1 more source

A New Multi-Tiered Solid State Disk Using Slc/Mlc Combined Flash Memory

, 2014
Storing digital information, ensuring the accuracy, steady and uninterrupted access to the data are considered as fundamental challenges in enterprise-class organizations and companies.
Batni, Arash, Safaei, Farshad
core   +1 more source