Results 71 to 80 of about 1,986,606 (160)

Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices

Sensors, 2020
NAND flash memory-based storage devices are vulnerable to errors induced by NAND flash memory cells. Error-correction codes (ECCs) are integrated into the flash memory controller to correct errors in flash memory. However, since ECCs show inherent limits
Seung-Ho Lim, Ki-Woong Park
doaj   +1 more source

Domain‐Wall Circulation Gating and Pinning via Compositional Engineering of Cylindrical Nanowires

Small, EarlyView.
Cylindrical magnetic nanowires offer a promising platform for future three‐dimensional spintronic devices. By strategically engineering nanometer‐scale chemical modulations, a novel circulation gate is established to control domain wall propagation.
Laura Álvaro‐Gómez, Claudia Fernández‐González, Sandra Ruiz‐Gómez, Nicolas Mille, Jean Christophe Toussaint, Rachid Belkhou, Michael Foerster, Eva Pereiro, Lucía Aballe, Núria Bagués, Christophe Thirion, Daria Gusakova, Aurelien Masseboeuf, Olivier Fruchart, Lucas Pérez   +14 more
wiley   +1 more source

Reliability challenges in 3D NAND Flash memories

, 2019
The reliability of 3D NAND Flash memory technology is depending on many factors. Most of them are related to the process-induced variability of the layers. Endurance, data retention capabilities, and cross-temperature immunity are the metrics that become
Cristian Zambelli, Rino Micheloni, Micheloni R., Olivo P., Piero Olivo, Zambelli C.   +5 more
core   +1 more source

Review of ferroelectric field‐effect transistors for three‐dimensional storage applications

Nano Select, 2021
The ferroelectric field‐effect transistor (FeFET) is one of the leading contenders to succeed charge‐trap‐based flash memory (CTF) devices in the current vertically‐integrated NAND flash storage market.
Hyeon Woo Park, Jae‐Gil Lee, Cheol Seong Hwang   +2 more
doaj   +1 more source

Charge‐Domain In‐Memory Computing With NAND‐Compatible Ferroelectric Memcapacitor Crossbar

Small, EarlyView.
A NAND‐compatible ferroelectric memcapacitor crossbar enables charge‐domain in‐memory computing through displacement‐current‐based readout with strongly suppressed static conduction. The platform combines reliable multilevel programmability, linear vector–matrix multiplication, and 3D‐scalable operation, while supporting hardware‐assisted image ...
Hwiho Hwang, Junsu Yu, Sangwook Youn, Dahoon Lee, Hyungjin Kim   +4 more
wiley   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, Volume 36, Issue 88, 2 November 2026.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Triple‐Level Content‐Addressable Vertical NAND Flash Memory (Adv. Sci. 61/2026)

Advanced Science, Volume 13, Issue 61, 3 November 2026.
Content‐Addressable V‐NAND Flash Memory A blue search beam illuminates the matching path through a towering, multilayer V‐NAND array. The image represents triple‐level content‐addressable V‐NAND, which stores and compares multilevel data in place for fast, energy‐efficient memory searches and AI computing.
Sung‐Ho Park, Jiseong Im, Yeongheon Yang, Ryun‐Han Koo, Jonghyun Ko, Mingyun Oh, Dongbeen Shin, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source

Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit

Advanced Materials, Volume 38, Issue 58, 16 October 2026.
Mg─Te chalcogenides address the leakage scaling trade‐off in ultrathin selector‐only memory. Structural partitioning in multiphase Mg─Te, combined with highly ionic Mg─Te bonding and Hf interfacial engineering, supports reliable 5 nm thickness operation at low write voltage with suppressed leakage current, narrow threshold voltage distributions, 10 ns ...
Yoori Seo, Dongmin Kim, Yu Bin Park, Jangseop Lee, Tae Hoon Lee, Hyunsang Hwang   +5 more
wiley   +1 more source

Characterizing 3D Floating Gate NAND Flash

, 2017
In this paper, we characterize a state-of-the-art 3D floating gate NAND flash memory through comprehensive experiments on an FPGA platform. Then, we present distinct observations on performance and reliability, such as operation latencies and various ...
Yue Zhu, You Zhou, Fei Wu, Zhonghai Lu, Qin Xiong, Yibing Chu, Changsheng Xie, Ping Huang   +7 more
core   +1 more source

Error correction codes in NAND flash memory [PDF]

, 2016
Error Correction Codes (ECC) are used in NAND Flash memories to detect and correct bit-errors. With shrinking technology nodes and increased memory complexity, bit error rates continue to grow.
Regulapati, Varsha
core   +1 more source