Concealable physical unclonable functions using vertical NAND flash memory [PDF]
Nature CommunicationsPhysical Unclonable Functions (PUFs) can address the demand for enhanced hardware security. Vertical NAND (V-NAND) flash memory is the most commercialized non-volatile memory.
Sung-Ho Park +5 more
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Channel Modeling and Quantization Design for 3D NAND Flash Memory [PDF]
Entropy, 2023 As the technology scales down, two-dimensional (2D) NAND flash memory has reached its bottleneck. Three-dimensional (3D) NAND flash memory was proposed to further increase the storage capacity by vertically stacking multiple layers.
Cheng Wang +5 more
doaj +3 more sources
Artificial Neural Network Assisted Error Correction for MLC NAND Flash Memory [PDF]
Micromachines, 2021 The multilevel per cell technology and continued scaling down process technology significantly improves the storage density of NAND flash memory but also brings about a challenge in that data reliability degrades due to the serious noise.
Ruiquan He +3 more
doaj +2 more sources
Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory [PDF]
Micromachines, 2021 In contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better ...
Woo-Jin Jung, Jun-Young Park
doaj +2 more sources
3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage [PDF]
Nanomaterials, 2022 As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in the
Xinyue Yu +6 more
doaj +2 more sources
CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory. [PDF]
Sci Adv, 2021 A unique three-dimensional integration strategy is provided for high-performance, ultrahigh-density ferroelectric memory. Ferroelectric memory has been substantially researched for several decades as its potential to obtain higher speed, lower power ...
Kim MK, Kim IJ, Lee JS.
europepmc +2 more sources
Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping
Memories - Materials, Devices, Circuits and Systems, 2023 The examination of the effect of retrograde channel doping on reliability and performance of 3-D junction-free NAND based flash memory is done for this paper.
Deepika Gupta +3 more
doaj +2 more sources
Flash-Cosmos: In-Flash Bulk Bitwise Operations Using Inherent Computation Capability of NAND Flash Memory [PDF]
Micro, 2022 Bulk bitwise operations, i. e., bitwise operations on large bit vectors, are prevalent in a wide range of important application domains, including databases, graph processing, genome analysis, cryptography, and hyper-dimensional computing.
Jisung Park +8 more
semanticscholar +3 more sources
Modeling methodology for thermo-structural analysis of V-NAND flash memory structure [PDF]
Scientific ReportsThis study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect.
Yongha Kim, Seungjun Ryu, Sungryung Lee
doaj +2 more sources
Model-Inversion-Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory. [PDF]
Adv Sci (Weinh)Schematic and key features of the proposed forward‐forward physical unclonable neural network (FF‐PUNN), incorporating a concealable physical unclonable function (PUF) layer and forward‐forward (FF) learning. ABSTRACT The growing use of neural networks in privacy‐sensitive applications necessitates architectures that inherently protect both data and ...
Park SH +8 more
europepmc +2 more sources