Results 111 to 120 of about 36,845 (298)

NAND flash memory technologies

open access: yes, 2016
This book discusses basic and advanced NAND flash memory technologies, including the principle of NAND flash, memory cell technologies, multi-bits cell technologies, scaling challenges of memory cell, reliability, and 3-dimensional cell as the future ...
Aritome, Seiichi
core  

Hardware‐Based On‐Chip Learning Using a Ferroelectric AND‐Type Array With Random Synaptic Weights

open access: yesAdvanced Intelligent Systems, EarlyView.
This work demonstrates an energy‐efficient on‐chip learning system using an Metal‐Ferroelectric‐Insulator‐Semiconductor FeAND synaptic array. By employing a feedback alignment scheme with a separate backward array using fixed random weights, the system overcomes directional limitations of AND‐type arrays and achieves robust, low‐power learning suitable
Minsuk Song   +8 more
wiley   +1 more source

A log-periodic fit for the flash crash of May 6, 2010 [PDF]

open access: yes
We show that a two-harmonic log-periodic formula fits the high-frequency data from the Dow Jones Industrial Average index, which encompass the recent episode known as the “flash crash†of May 6, 2010.flash crash, crashes, log ...
Sergio Da Silva, Raul Matsushita
core  

Input Sparsity‐Aware Computing‐In‐Memory with Bidirectional Conversion‐Skippable Analog‐to‐Digital Converter

open access: yesAdvanced Intelligent Systems, EarlyView.
This article introduces an input sparsity‐aware computing‐in‐memory macro featuring novel bidirectional conversion‐skippable analog‐to‐digital converters. By dynamically adjusting resolution based on element‐level sparsity, the architecture skips redundant most significant bit and least significant bit conversions.
Choongseok Song   +2 more
wiley   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

open access: yesAdvanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison   +4 more
wiley   +1 more source

A NOR Emulation Strategy over NAND Flash Memory

open access: yes, 2007
快閃記憶體大致可分為兩類:NOR型快閃記憶體及NAND型快閃記憶體。一般而言,因為有就地執行(eXecute-In-Place,XIP)和快速讀取等特性,NOR型快閃記憶體應用上適用於儲存程式的可執行檔。而擁有較大容量與較快寫入速度的NAND型快閃記憶體則適用於資料儲存。此外,兩者在成本上有很大的差距,NOR型快閃記憶體相對於NAND型快閃記憶體高出許多。基於市場的趨勢,若能以較具經濟效益的NAND型快閃記憶體取代NOR型快閃,將可大幅地降低成本、提升毛利。在這篇論文中 ...
Lin, Chien-Hung, 林建宏
core  

Retention of data in heat-damaged SIM cards and potential recovery methods

open access: yes, 2007
Examination of various SIM cards and smart card devices indicates that data may be retained in SIM card memory structures even after heating to temperatures up to 450oC, which the National Institute of Standards and Technology (NIST) has determined to be
Kenyon, AJ   +5 more
core   +1 more source

Ising Solver Using Vertical NAND Flash Memory

open access: yesAdvanced Intelligent Systems, EarlyView.
Commercial V‐NAND flash memory is repurposed as a discrete‐time Ising solver by exploiting in‐memory current summation and read‐voltage‐controlled intrinsic noise. The system implements Hopfield neural‐network updates with simulated‐annealing‐like behavior, solving max‐cut problems with high accuracy and energy efficiency while using mass‐produced ...
Sung‐Ho Park   +7 more
wiley   +1 more source

Smart Electrical Screening Methodology for Channel Hole Defects of 3D Vertical NAND (VNAND) Flash Memory

open access: yesEng
In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim   +2 more
doaj   +1 more source

E±cient Allocation Algorithms for FLASH File Systems

open access: yes, 2007
Embedded systems have been developing rapidly in recent years, and flash memory technology has become an essential building block because of its shock-resistance, low power consumption, and non-volatile nature. Since flash memory is a write-once and bulk-
Chou, Li-Fu, 周立夫
core  

Home - About - Disclaimer - Privacy