Results 111 to 120 of about 2,006,173 (289)
The design and implementation of micro disk module by use LBA NAND flash memory
, 2010 碩士本研究目標在於避免智慧型ATA介面控制器在快閃記憶體製程或架構更新時，需重新修正控制器內部對快閃記憶體的錯誤修正能力和記憶體位址管理方式，希望利用新增加的邏輯定址快閃記憶體內含控制器來計算其錯誤校正碼和管理快閃記憶體內部資料位址，以避免智慧型控制器須跟隨著新型快閃記憶體，而改變其內部機制。 目前固態硬碟(Solid State Disk)的主要系統架構是由一顆智慧型ATA介面控制器和快閃記憶體(Flash Memory)所組成 ...
黃仁芳; Huang, Renfang
core
Advanced Science, EarlyView.Electrochemical metallization and valence change mechanisms are shown to coexist within a single metal halide perovskite memristor, selectively activated by simply reversing the electroforming voltage polarity. Ag‐driven switching delivers low operating voltages and high endurance, while intrinsic ion migration yields superior retention and resistance ...
Ismael Fernandez‐Guillen +4 more
wiley +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
IEEE AccessNAND flash memory is a type of non-volatile memory that provides high-density storage capacity with fast read and write operations. However, increasing storage capacity and density lead to significant data reliability degradation.
Inhyuk Choi +3 more
doaj +1 more source
Advanced Electronic Materials, EarlyView.In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
EngIn order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim +2 more
doaj +1 more source
E±cient Allocation Algorithms for FLASH File Systems
, 2007 Embedded systems have been developing rapidly in recent years, and flash memory technology has become an essential building block because of its shock-resistance, low power consumption, and non-volatile nature. Since flash memory is a write-once and bulk-
Chou, Li-Fu, 周立夫
core
An Efficient Mapping Technique for Flash Memory Using Grouped Blocks
, 2020 -Recently, Flash memory is adopted by many devices as it has very useful features. However, it has a critical drawback of "erase-before-write" feature. This problem incurs the unexpected performance degradation.
Hyuk-In Kwon, Tae-Sun Chung
core
An Efficient Dynamic Hash Index Structure for NAND Flash Memory
, 2009 We propose an efficient dynamic hash index structure suitable for a NAND flash memory environment. Since write operations incur significant overhead in NAND flash memory, our design of index structure focuses on minimizing the number of write operations ...
Myoung Ho KIM +7 more
core +1 more source