Results 91 to 100 of about 264,240 (179)

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors. [PDF]

Sensors (Basel), 2023
Fan H, Tian X, Peng H, Shen Y, Li L, Li M, Gao L.   +6 more
europepmc   +1 more source

Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO₂/Al₂O₃ Nanolaminated Stacks. [PDF]

Nanomaterials (Basel), 2023
Spassov D, Paskaleva A.
europepmc   +1 more source

ES-SNN: e-Flash Memory-Based Stochastic Spiking Neural Networks for Edge Inference

IEEE Access
In this work, we propose an e-Flash memory-based Stochastic Spiking Neural Network (ES-SNN), which integrates stochastic spiking neurons with e-Flash memory-based multi-level synapses for probabilistic computation.
Hyeyeon Jeon, Jungnam Kim, Yoon Kim, Minsuk Koo   +3 more
doaj   +1 more source

An epidermal electronic system for physiological information acquisition, processing, and storage with an integrated flash memory array. [PDF]

Sci Adv, 2022
Xiang L, Wang Y, Xia F, Liu F, He D, Long G, Zeng X, Liang X, Jin C, Wang Y, Pan A, Peng LM, Hu Y.   +12 more
europepmc   +1 more source

Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory. [PDF]

Micromachines (Basel), 2021
Jeong JK, Sung JY, Ko WS, Nam KR, Lee HD, Lee GW.   +5 more
europepmc   +1 more source

Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory. [PDF]

Micromachines (Basel), 2021
Jung WJ, Park JY.
europepmc   +1 more source

Novel Program Scheme of Vertical NAND Flash Memory for Reduction of Z-Interference. [PDF]

Micromachines (Basel), 2021
Yi SI, Kim J.
europepmc   +1 more source

High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles. [PDF]

Nanomaterials (Basel), 2021
Naqi M, Kwon N, Jung SH, Pujar P, Cho HW, Cho YI, Cho HK, Lim B, Kim S.   +8 more
europepmc   +1 more source

CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory. [PDF]

Sci Adv, 2021
Kim MK, Kim IJ, Lee JS.
europepmc   +1 more source

Channel Coding for Flash Memories.

, 2019
Flash memories are non-volatile memory devices. The rapid development of flash technologies leads to higher storage density, but also to higher error rates. This dissertation considers this reliability problem of flash memories and investigates suitable error correction codes, e.g. BCH-codes and concatenated codes.
openaire   +3 more sources