Results 91 to 100 of about 36,845 (298)

Non-Invasive Detection Method for Recycled Flash Memory Using Timing Characteristics †

open access: yesCryptography, 2018
Counterfeiting electronic components is a serious problem for the security and reliability of any electronic systems. Unfortunately, the number of counterfeit components has increased considerably after the introduction of horizontal semiconductor supply
Sadman Sakib   +4 more
doaj   +1 more source

ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES

open access: yes, 2012
Enclosed in this thesis work it can be found the results of a three years long research activity performed during the XXIV-th cycle of the Ph.D. school in Engineering Science of the Università degli Studi di Ferrara. The topic of this work is concerned
Zambelli, Cristian
core  

Uranium Doped Gallium Nitride Epitaxial Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix   +10 more
wiley   +1 more source

The design and implementation of micro disk module by use LBA NAND flash memory

open access: yes, 2010
碩士本研究目標在於避免智慧型ATA介面控制器在快閃記憶體製程或架構更新時,需重新修正控制器內部對快閃記憶體的錯誤修正能力和記憶體位址管理方式,希望利用新增加的邏輯定址快閃記憶體內含控制器來計算其錯誤校正碼和管理快閃記憶體內部資料位址,以避免智慧型控制器須跟隨著新型快閃記憶體,而改變其內部機制。 目前固態硬碟(Solid State Disk)的主要系統架構是由一顆智慧型ATA介面控制器和快閃記憶體(Flash Memory)所組成 ...
黃仁芳; Huang, Renfang
core  

Graphene Flash Memory

open access: yes, 2016
Graphene’s single atomic layer of sp2 carbon has recently garnered much attention for its potential use in electronic applications. Here, we report a memory application for graphene, which we call graphene flash memory (GFM).
Emil B. Song (1861513)   +12 more
core   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Intelligent Read Framework With Meta-Learning for NAND Flash Memory Under Process Variation

open access: yesIEEE Access
The storage density of NAND flash memory has significantly increased due to multi-leveling and downscaling technologies. As a side effect of enhanced storage capacity, flash memory becomes vulnerable to circuit-level noise.
Minyoung Hwang   +3 more
doaj   +1 more source

Asymmetric Programming: A Highly Reliable Metadata Allocation Strategy for MLC NAND Flash Memory-Based Sensor Systems

open access: yesSensors, 2014
While the NAND flash memory is widely used as the storage medium in modern sensor systems, the aggressive shrinking of process geometry and an increase in the number of bits stored in each memory cell will inevitably degrade the reliability of NAND flash
Min Huang, Zhaoqing Liu, Liyan Qiao
doaj   +1 more source

Block Allocation Algorithms for FLASH File Systems

open access: yes, 2007
Embedded systems have been developing rapidly in recent years, and flash memory technology has become a major part of embedded systems because of its shock-resistance, low power consumption, and non-volatile nature.
莊中豪, Chuang, Chung-Hao
core  

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

open access: yesAdvanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol   +7 more
wiley   +1 more source

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