Results 81 to 90 of about 264,240 (179)
In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim +2 more
doaj +1 more source
Constant-Weight Gray Codes for Local Rank Modulation
We consider the local rank-modulation scheme in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations.
Schwartz, Moshe
core +1 more source
Flash Memory ‘Bumping’ Attacks [PDF]
This paper introduces a new class of optical fault injection attacks called bumping attacks. These attacks are aimed at data extraction from secure embedded memory, which usually stores critical parts of algorithms, sensitive data and cryptographic keys.
openaire +1 more source
A Novel Program Scheme for Z-Interference Improvement in 3D NAND Flash Memory. [PDF]
Jia J, Jin L, Jia X, You K.
europepmc +1 more source
Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory. [PDF]
An U +6 more
europepmc +1 more source
Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory. [PDF]
You K, Jin L, Jia J, Huo Z.
europepmc +1 more source
Design Strategies of 40 nm Split-Gate NOR Flash Memory Device for Low-Power Compute-in-Memory Applications. [PDF]
Yook CG, Kim JN, Kim Y, Shim W.
europepmc +1 more source
Editorial for the Special Issue on Flash Memory Devices. [PDF]
Zambelli C, Micheloni R.
europepmc +1 more source
This paper proposes a simple yet effective scheme for NAND Flash memories that employ on‐chip microcontroller units (MCUs) to manage internal array operations.
Geonu Kim
doaj +1 more source
Owing to the inherent architecture of NAND flash memory, the widely used redundant mechanisms for replacing faulty cells are limited to spare blocks and spare columns.
Shyue-Kung Lu +2 more
doaj +1 more source

