Results 61 to 70 of about 264,240 (179)

On the Capacity of Multilevel NAND Flash Memory Channels

open access: yes, 2016
In this paper, we initiate a first information-theoretic study on multilevel NAND flash memory channels with intercell interference. More specifically, for a multilevel NAND flash memory channel under mild assumptions, we first prove that such a channel ...
Han, Guangyue   +2 more
core   +1 more source

Writing on dirty flash memory [PDF]

open access: yes2014 52nd Annual Allerton Conference on Communication, Control, and Computing (Allerton), 2014
The most important challenge in the scaling down of flash memory is its increased inter-cell interference (ICI). If side information about ICI is known to the encoder, the flash memory channel can be viewed as similar to Costa's "writing on dirty paper (dirty paper coding)." We first explain why flash memories are dirty due to ICI.
Yongjune Kim 0001, B. V. K. Vijaya Kumar
openaire   +2 more sources

Systematic Analysis of Spacer and Gate Length Scaling on Memory Characteristics in 3D NAND Flash Memory

open access: yesApplied Sciences
This study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improved ...
Hee Young Bae   +2 more
doaj   +1 more source

Bit upset and performance degradation of NAND flash memory induced by total ionizing dose effects

open access: yesAIP Advances, 2023
In order to develop the shift model of threshold voltage distribution of the memory array in a radiation environment based on the bit upset test results of NAND Flash and study the coupling effect caused by the simultaneous performance degradation of ...
Jiangkun Sheng   +8 more
doaj   +1 more source

Coding scheme for 3D vertical flash memory

open access: yes, 2015
Recently introduced 3D vertical flash memory is expected to be a disruptive technology since it overcomes scaling challenges of conventional 2D planar flash memory by stacking up cells in the vertical direction.
Bandic, Zvonimir   +4 more
core   +1 more source

When Do WOM Codes Improve the Erasure Factor in Flash Memories?

open access: yes, 2015
Flash memory is a write-once medium in which reprogramming cells requires first erasing the block that contains them. The lifetime of the flash is a function of the number of block erasures and can be as small as several thousands.
Maor, Gal   +3 more
core   +1 more source

Flash Memory Array for Efficient Implementation of Deep Neural Networks

open access: yesAdvanced Intelligent Systems, 2021
The advancement of artificial intelligence applications is promoted by developing deep neural networks (DNNs) with increasing sizes and putting forward higher computing power requirements of the processing devices.
Runze Han   +5 more
doaj   +1 more source

Flash-memories in Space Applications: Trends and Challenges [PDF]

open access: yes, 2009
Nowadays space applications are provided with a processing power absolutely overcoming the one available just a few years ago. Typical mission-critical space system applications include also the issue of solid-state recorder(s).
Caramia, M.   +3 more
core  

Schemes for Privacy Data Destruction in a NAND Flash Memory

open access: yesIEEE Access, 2019
We propose schemes for efficiently destroying privacy data in a NAND flash memory. Generally, even if privacy data is erased from NAND flash memories, there is a high probability that the data will remain in an invalid block. This is a management problem
Na-Young Ahn, Dong Hoon Lee
doaj   +1 more source

Rewriting Codes for Joint Information Storage in Flash Memories [PDF]

open access: yes, 2010
Memories whose storage cells transit irreversibly between states have been common since the start of the data storage technology. In recent years, flash memories have become a very important family of such memories.
Bruck, Jehoshua, Jiang, Anxiao
core  

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