Results 51 to 60 of about 36,845 (298)

NAND Flash Memory Organization and Operations

open access: yes, 2015
NAND flash memories are well known for their uncomplicated structure, low cost, and high capacity. Their typical characteristics include architecture, sequential reading, and high density.
Kuchta, Radek   +2 more
core   +1 more source

Rewriting Codes for Flash Memories [PDF]

open access: yesIEEE Transactions on Information Theory, 2014
Flash memory is a non-volatile computer memory comprising blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by erasing an entire block.
Eitan Yaakobi   +4 more
openaire   +2 more sources

Recycling of NiTi Shape Memory Alloys: Fundamental and Technological Aspects of a Vacuum Induction Melting Processing Route

open access: yesAdvanced Engineering Materials, EarlyView.
The present study investigates recycling of NiTi shape memory alloys via vacuum induction melting. An ingot was synthesized from elemental Ni and Ti and subjected to three subsequent remelting cycles. Remelting increases process durations and impurity levels and adversely affects microstructures and functional properties.
Sakia Sophia Noorzayee   +7 more
wiley   +1 more source

Hiding Information in Flash Memory [PDF]

open access: yes2013 IEEE Symposium on Security and Privacy, 2013
This paper introduces a novel information hiding technique for Flash memory. The method hides data within an analog characteristic of Flash, the program time of individual bits. Because the technique uses analog behaviors, normal Flash memory operations are not affected and hidden information is invisible in the data stored in the memory.
Yinglei Wang   +4 more
openaire   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo   +10 more
wiley   +1 more source

Flash-memories in Space Applications: Trends and Challenges [PDF]

open access: yes, 2009
Nowadays space applications are provided with a processing power absolutely overcoming the one available just a few years ago. Typical mission-critical space system applications include also the issue of solid-state recorder(s).
Caramia, M.   +4 more
core  

Trajectory Codes for Flash Memory [PDF]

open access: yesIEEE Transactions on Information Theory, 2013
Submitted to IEEE Trans.
Anxiao   +4 more
openaire   +3 more sources

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Physics-Based SPICE-Compatible Compact Model of FLASH Memory With Poly-Si Channel for Computing-in-Memory Applications

open access: yesIEEE Journal of the Electron Devices Society
Recently, three-dimensional FLASH memory with multi-level cell characteristics has attracted increasing attention to enhance the capabilities of artificial intelligence (AI) by leveraging computingin-memory (CIM) systems.
Jung Rae Cho   +9 more
doaj   +1 more source

Data movement in flash memories [PDF]

open access: yes2009 47th Annual Allerton Conference on Communication, Control, and Computing (Allerton), 2009
NAND flash memories are the most widely used non-volatile memories, and data movement is common in flash storage systems. We study data movement solutions that minimize the number of block erasures, which are very important for the efficiency and longevity of flash memories.
Anxiao Jiang   +3 more
openaire   +2 more sources

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