Results 31 to 40 of about 2,208,368 (318)
IEEE Journal of the Electron Devices Society, 2021 A novel design method using unsigned input is proposed for a high-density and parallel synaptic string architecture capable of bit-wise operation and bit-counting utilizing NAND flash memory.
Sung-Tae Lee +6 more
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Materials Futures, 2022 Flash memory with high operation speed and stable retention performance is in great demand to meet the requirements of big data. In addition, the realisation of ultrafast flash memory with novel functions offers a means of combining heterogeneous ...
Liwei Liu +8 more
semanticscholar +1 more source
Garbage Collection Algorithm for NAND Flash Memory Based on Data Update Interval [PDF]
Jisuanji gongcheng, 2022 Flash memory is widely used in the field of data storage, owing to its high speed and compact volume.In this study, we propose a garbage collection algorithm called UIGC based on data update interval to improve the garbage collection efficiency of NAND ...
YU Jin, YAN Hua
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Effects of ion beams on flash memory cells [PDF]
Nuclear Technology and Radiation Protection, 2014 This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation ...
Obrenović Marija D. +3 more
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IEEE Access, 2021 This paper focuses on the NAND flash memory as a data storage medium in the Internet of things data acquisition system, which plays an important role from beginning to end.
Zhuo Hou +3 more
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Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices
Sensors, 2020 NAND flash memory-based storage devices are vulnerable to errors induced by NAND flash memory cells. Error-correction codes (ECCs) are integrated into the flash memory controller to correct errors in flash memory. However, since ECCs show inherent limits
Seung-Ho Lim, Ki-Woong Park
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Monte Carlo Simulation of Flash Memory Elements’ Electrophysical Parameters
Приборы и методы измерений, 2022 Operation of modern flash memory elements is based on electron transport processes in the channel of silicon MOSFETs with floating gate. The aim of this work was calculation of electron mobility and study of the influence of phonon and ionized impurity ...
O. G. Zhevnyak +3 more
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Efficient Design of Read Voltages and LDPC Codes in NAND Flash Memory Using Density Evolution
IEEE Access, 2023 Low-density parity-check (LDPC) codes play an important role in the reliability enhancement of commercial NAND flash memory. Unfortunately, due to the requirement of the reading speed of NAND flash memory, the LDPC decoder will not obtain precise soft ...
Chatuporn Duangthong +2 more
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Increasing Flash Memory Lifetime by Dynamic Voltage Allocation for Constant Mutual Information [PDF]
, 2014 The read channel in Flash memory systems degrades over time because the Fowler-Nordheim tunneling used to apply charge to the floating gate eventually compromises the integrity of the cell because of tunnel oxide degradation.
Chen, Tsung-Yi +2 more
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An Efficient and Robust Partial Differential Equation Solver by Flash-Based Computing in Memory
Micromachines, 2023 Flash memory-based computing-in-memory (CIM) architectures have gained popularity due to their remarkable performance in various computation tasks of data processing, including machine learning, neuron networks, and scientific calculations. Especially in
Yueran Qi +10 more
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