Results 11 to 20 of about 2,208,368 (318)

Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts [PDF]

open access: yesNature Communications, 2023
As the prevailing non-volatile memory (NVM), flash memory offers mass data storage at high integration density and low cost. However, due to the ‘speed-retention-endurance’ dilemma, their typical speed is limited to ~microseconds to milliseconds for ...
Jun Yu   +9 more
doaj   +3 more sources

Subnanosecond flash memory enabled by 2D-enhanced hot-carrier injection. [PDF]

open access: yesNature
The pursuit of non-volatile memory with program speeds below one nanosecond, beyond the capabilities of non-volatile flash and high-speed volatile static random-access memory, remains a longstanding challenge in the field of memory technology1. Utilizing
Xiang Y   +7 more
europepmc   +4 more sources

CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory. [PDF]

open access: yesSci Adv, 2021
A unique three-dimensional integration strategy is provided for high-performance, ultrahigh-density ferroelectric memory. Ferroelectric memory has been substantially researched for several decades as its potential to obtain higher speed, lower power ...
Kim MK, Kim IJ, Lee JS.
europepmc   +2 more sources

Channel Modeling and Quantization Design for 3D NAND Flash Memory [PDF]

open access: yesEntropy, 2023
As the technology scales down, two-dimensional (2D) NAND flash memory has reached its bottleneck. Three-dimensional (3D) NAND flash memory was proposed to further increase the storage capacity by vertically stacking multiple layers.
Cheng Wang   +5 more
doaj   +2 more sources

Artificial Neural Network Assisted Error Correction for MLC NAND Flash Memory [PDF]

open access: yesMicromachines, 2021
The multilevel per cell technology and continued scaling down process technology significantly improves the storage density of NAND flash memory but also brings about a challenge in that data reliability degrades due to the serious noise.
Ruiquan He   +3 more
doaj   +2 more sources

Design and implementation of efficient bootloader for endurance enhancement in flash memory storage systems [PDF]

open access: yesHeliyon
We propose a new bootloader design with dynamic boot addressing to increase the endurance of microcontroller flash memories and to use flash memory efficiently.Although the final industrial products are not updated much, regular programming during the ...
Mehmet Ugur Kebir, Firat Kacar
doaj   +2 more sources

Flash Memory for Synaptic Plasticity in Neuromorphic Computing: A Review [PDF]

open access: yesBiomimetics
The rapid expansion of data has made global access easier, but it also demands increasing amounts of energy for data storage and processing. In response, neuromorphic electronics, inspired by the functionality of biological neurons and synapses, have ...
Jisung Im   +4 more
doaj   +2 more sources

3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage [PDF]

open access: yesNanomaterials, 2022
As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in the
Xinyue Yu   +6 more
doaj   +2 more sources

Modeling methodology for thermo-structural analysis of V-NAND flash memory structure [PDF]

open access: yesScientific Reports
This study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect.
Yongha Kim, Seungjun Ryu, Sungryung Lee
doaj   +2 more sources

Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer. [PDF]

open access: yesNat Commun, 2019
Intrinsic charge trap capacitive non-volatile flash memories take a significant share of the semiconductor electronics market today. It is challenging to create intrinsic traps in the dielectric layer without high temperature processing steps.
Mondal S, Venkataraman V.
europepmc   +3 more sources

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