Results 11 to 20 of about 2,006,173 (289)
Policy Optimization Scheme of Refresh and Duplication Combination Based on LDPC Read Delay [PDF]
Aiming at the problem of reliability degradation caused by the increase of the density and capacity of flash memory,an optimization scheme of refresh and copy combination strategy based on LDPC read delay is proposed.In general,the original strategy is ...
ZHANG Yaofang, LI Peixuan, XIE Ping
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Introduction: The Flash technique is a novel intervention aimed at rapidly decreasing the subjective disturbance of an aversive memory, thereby serving as a potential way of treating post-traumatic stress disorder (PTSD).
Thomas C. Brouwers +7 more
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Editorial for the Special Issue on Flash Memory Devices. [PDF]
Flash memory devices represented a breakthrough in the storage industry since their inception in the mid-1980s, and innovation is still ongoing after more than 35 years.
Zambelli C, Micheloni R.
europepmc +2 more sources
A novel design method using unsigned input is proposed for a high-density and parallel synaptic string architecture capable of bit-wise operation and bit-counting utilizing NAND flash memory.
Sung-Tae Lee +6 more
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Effects of ion beams on flash memory cells [PDF]
This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation ...
Obrenović Marija D. +3 more
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Garbage Collection Algorithm for NAND Flash Memory Based on Data Update Interval [PDF]
Flash memory is widely used in the field of data storage, owing to its high speed and compact volume.In this study, we propose a garbage collection algorithm called UIGC based on data update interval to improve the garbage collection efficiency of NAND ...
YU Jin, YAN Hua
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Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices
NAND flash memory-based storage devices are vulnerable to errors induced by NAND flash memory cells. Error-correction codes (ECCs) are integrated into the flash memory controller to correct errors in flash memory. However, since ECCs show inherent limits
Seung-Ho Lim, Ki-Woong Park
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This paper focuses on the NAND flash memory as a data storage medium in the Internet of things data acquisition system, which plays an important role from beginning to end.
Zhuo Hou +3 more
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Monte Carlo Simulation of Flash Memory Elements’ Electrophysical Parameters
Operation of modern flash memory elements is based on electron transport processes in the channel of silicon MOSFETs with floating gate. The aim of this work was calculation of electron mobility and study of the influence of phonon and ionized impurity ...
O. G. Zhevnyak +3 more
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International audienceBulk bitwise operations, i.e., bitwise operations on large bit vectors, are prevalent in a wide range of important application domains, including databases, graph processing, genome analysis, cryptography, and hyper-dimensional ...
Park, Jisung +8 more
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