Results 241 to 250 of about 2,006,173 (289)
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Proceedings of the IEEE, 2003
This paper mainly focuses on the development of the NOR flash memory technology, with the aim of describing both the basic functionality of the memory cell used so far and the main cell architecture consolidated today. The NOR cell is basically a floating-gate MOS transistor, programmed by channel hot electron and erased by Fowler-Nordheim tunneling ...
Alberto Modelli, R Bez, A Visconti
exaly +2 more sources
This paper mainly focuses on the development of the NOR flash memory technology, with the aim of describing both the basic functionality of the memory cell used so far and the main cell architecture consolidated today. The NOR cell is basically a floating-gate MOS transistor, programmed by channel hot electron and erased by Fowler-Nordheim tunneling ...
Alberto Modelli, R Bez, A Visconti
exaly +2 more sources
Sorting in a Memory Hierarchy with Flash Memory
Datenbank-Spektrum, 2011 Flash memory continues to improve in price, capacity, reliability, durability, and performance. In addition to consumer and client devices, flash memory is also employed in many servers. Its optimal usage in various classes of server software, including web servers, file-and-print servers, and database servers, requires evaluation and analysis.
Graefe, Goetz
core +3 more sources
An Efficient NAND Flash File System for Flash Memory Storage
IEEE Transactions on Computers, 2006 In this paper, we present an efficient flash file system for flash memory storage. Flash memory, especially NAND flash memory, has become a major method for data storage. Currently, a block level translation interface is required between an existing file
Seung-Ho Lim, Kyu-Ho Park
exaly +2 more sources
, 2014 demo uses a resistance to simulate the specimen ◆ Temperature display ◆ Battery voltage monitoring IAP stores test data ◆ IAP reads and writes data, replaces the external EEPROM, directly stores the test data in the Flash Memory ◆ Large Flash Memory ...
CHIN ALBERT, TSAI CHUN-YANG
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VLSI Design 2000. Wireless and Digital Imaging in the Millennium. Proceedings of 13th International Conference on VLSI Design, 2002
Flash memories can undergo three different types of disturbances, DC-programming, DC-erasure, and drain disturbance. These faults are specific to flash memories and do not occur in RAMs. In this paper, we discuss these disturbances, their causes, and develop fault models that capture the characteristics of these faults.
Mohammad Gh. Mohammad +2 more
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Flash memories can undergo three different types of disturbances, DC-programming, DC-erasure, and drain disturbance. These faults are specific to flash memories and do not occur in RAMs. In this paper, we discuss these disturbances, their causes, and develop fault models that capture the characteristics of these faults.
Mohammad Gh. Mohammad +2 more
openaire +2 more sources
A survey of flash memory design and implementation of database in flash memory
2008 3rd International Conference on Intelligent System and Knowledge Engineering, 2008Flash memory is getting more popularity for its non-volatility, shock resistance, no mechanical delay and random access. Increasing size of flash memory as well as decrease in price has strengthened the possibility of replacing hard disk in near future.
Aminul Haque Chowdhury, Ki-Hyung Kim
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1999
Solid-state memory devices which retain information once the power supply is switched off are called “nonvolatile” memories. For instance, using standard digital technology, a nonvolatile memory can be implemented by writing permanently the data in the memory array during manufacturing (mask-programmed Read Only Memories, ROM).
OLIVO, Piero, E. ZANONI
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Solid-state memory devices which retain information once the power supply is switched off are called “nonvolatile” memories. For instance, using standard digital technology, a nonvolatile memory can be implemented by writing permanently the data in the memory array during manufacturing (mask-programmed Read Only Memories, ROM).
OLIVO, Piero, E. ZANONI
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On the Capacity and Programming of Flash Memories
IEEE Transactions on Information Theory, 2012zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Anxiao Jiang, Hao Li, Jehoshua Bruck
openaire +3 more sources
1999
Most of the current applications of electronics require non-volatile memories, which can keep stored information when the power supply is switched off. Flash memories (in which a single cell can be electrically programmed and a large number of cells are usually electrically erased at the same time) are the most versatile non-volatile memories. They are
Frank Ruei-Ling Lin +4 more
+5 more sources
Most of the current applications of electronics require non-volatile memories, which can keep stored information when the power supply is switched off. Flash memories (in which a single cell can be electrically programmed and a large number of cells are usually electrically erased at the same time) are the most versatile non-volatile memories. They are
Frank Ruei-Ling Lin +4 more
+5 more sources
2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06), 2006
It has become 19 years, since the development of the NAND Flash started using 0.7..m rule in 1987. The speed of the scaling has been very fast and the period of the product of the new generation is less than 2 years. Now, design rule of the NAND Flash memory has become less than 70nm.
openaire +2 more sources
It has become 19 years, since the development of the NAND Flash started using 0.7..m rule in 1987. The speed of the scaling has been very fast and the period of the product of the new generation is less than 2 years. Now, design rule of the NAND Flash memory has become less than 70nm.
openaire +2 more sources