Results 71 to 80 of about 4,902 (297)

Suspended Gate Silicon Nanodots memory

open access: yes, 2008
This paper proposes a new non-volatile semiconductor memory which features a suspended gate integrated with silicon nanocrystals dots as a floating gate and the MOSFET as a readout. Performing three-dimensional finite element simulations combined with an
Mizuta, Hiroshi   +3 more
core  

Multidimensional Cellular Micro‐Compartments to Model Invasive Lobular Carcinoma Dormancy

open access: yesAdvanced Healthcare Materials, EarlyView.
Invasive lobular carcinoma (ILC) is an understudied subtype of breast cancer that is susceptible to late recurrences. In this study, micro‐compartmentalization techniques spanning multiple dimensions, including 2D, pseudo‐3D, and 3D, are integrated to uncover the mechanisms underlying ILC dormancy, revealing the central role of p27Kip1.
Xilal Y. Rima   +15 more
wiley   +1 more source

A Virtual Fabrication and High-Performance Design of 65 nm Nanocrystal Floating-Gate Transistor

open access: yesModelling and Simulation in Engineering
Floating-gate transistor lies at the heart of many aspects of semiconductor applications such as neural networks, analog mixed-signal, neuromorphic computing, and especially in nonvolatile memories.
Thinh Dang Cong, Trang Hoang
doaj   +1 more source

Single-electron multiple-valued memory using ultra-small floating gate metal-oxide-semiconductor field effect transistor

open access: yes, 2004
This paper proposes a novel single-electron multiple-valued memory. It is a metal-oxide-semiconductor field effect transistor (MOS)-type memory with multiple separate control gates and floating gate layer, which consists of nano-crystal grains.
Wu NJ   +2 more
core  

Floating-Gate MOS Synapse Transistors [PDF]

open access: yes, 1998
Our goal is to develop silicon learning systems. One impediment to achieving this goal has been the lack of a simple circuit element combining nonvolatile analog memory storage with locally computed memory updates.
Minch, Bradley A.   +3 more
core  

Nanocrystal floating gate memory with indium gallium zinc oxide channel and Pt- Fe2O3 core-shell nanocrystals

open access: yes, 2012
A nanocrystal (NC) floating gate memory with colloidal Pt-Fe 2O3 core-shell NCs with indium gallium zinc oxide (IGZO) channel was fabricated. The Pt core and Fe2O3 shell in NC play a role of charge storage node and thin tunneling dielectric, respectively.
Baek, Y.-J.   +5 more
core   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

open access: yesAdvanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long   +26 more
wiley   +1 more source

Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory

open access: yes, 2018
By designing and tailoring the structure of the floating gate, a special floating-gate field-effect transistor configuration has been proposed for the design of programmable non-volatile black phosphorus PNP junction memory.
Jingtao Zhu   +7 more
core   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

open access: yesAdvanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong   +12 more
wiley   +1 more source

Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory? [PDF]

open access: yes
Conventional floating-gate (FG) transistors (made with Si/poly-Si) that form the building blocks of the widely employed nonvolatile flash memory technology face severe scaling challenges beyond the 12-nm node.
Bertolazzi, Simone   +4 more
core   +1 more source

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