Results 81 to 90 of about 4,902 (297)
Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr
Advanced Materials, EarlyView.Biaxial compressive strain significantly enhances magnetoresistance and critical saturation fields in thin flakes of the 2D magnet CrSBr, along all three crystallographic axes. First‐principles calculations link these effects to strain‐induced increases in exchange interactions and magnetic anisotropy.
Eudomar Henríquez‐Guerra +19 more
wiley +1 more source
A study on the nanocrystal floating-gate nonvolatile memory
, 2005 textThis dissertation presents the theoretical analysis and experimental results of the nanocrystal floating-gate nonvolatile memory devices. The problems in scaling down the conventional floating-gate nonvolatile memory device have been investigated ...
Lee, Jong Jin
core
Organic floating-gate transistor memory based on the structure of pentacene/nanoparticle-Al/Al2O3
, 2010 An organic thin-film transistor memory, based on the pentacene semiconductor/nanoparticle-Al floating-gate/Al2O3 tunneling layer, is demonstrated by a simple fabrication process.
Ma DG, Dongge Ma, Wang W, Wei Wang
core +1 more source
Advanced Materials, EarlyView.Ordered three‐dimensional anodic aluminum oxide (3D‐AAO) nanoarchitectures with longitudinal and transverse pores enable architecture‐driven metamaterials. The review maps fabrication advances, including hybrid pulse anodization, and shows how 3D‐AAO templates tailor properties across magnetism, energy, catalysis, and sensing.
Marisol Martín‐González
wiley +1 more source
Applied SciencesNanoparticle floating gate (NPFG) transistors have gained attention as synaptic devices due to their discrete charge storage capability, which minimizes leakage currents and enhances the memory window.
Soyeon Jeong +5 more
doaj +1 more source
SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors
, 2022 Group IV quantum dots (QDs) in HfO2 are attractive for non-volatile memories (NVMs) due to complementary metal-oxide semiconductor (CMOS) compatibility. Besides the role of charge storage centers, SiGeSn QDs have the advantage of a low thermal budget for
Valentin Serban Teodorescu +6 more
core +1 more source
Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors
Advanced Materials, EarlyView.A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi +11 more
wiley +1 more source
Effect of Charge Retention of Non-Volatile Memory TFTs Under Multiple Read Cycles
IEEE Journal of the Electron Devices Society, 2017 A hydrogenated amorphous silicon thin-film transistor with an engineered charge-trapping interface between the gate dielectric and the channel layer is fabricated to realize non-volatile memory. The memory devices possessed a large memory window and good
Sunil Sanjeevi +4 more
doaj +1 more source
Double-gate floating-body memory device
, 2013 A memory device is provided comprising a transistor having a floating body positioned between source and drain regions,the floating body being sandwiched between first and second insulated gates each comprising a gate electrode.
Renaux, Christian +4 more
core
Advanced Materials, EarlyView.A fully flexible ion‐gel‐gated graphene‐channel transistor driven by a triboelectric nanogenerator enables self‐powered tactile sensing and synaptic learning. Mimicking spike‐rate‐dependent plasticity, the device exhibits frequency‐selective potentiation and depression, supporting rate‐coded neuromorphic computation even under flex.
Hanseong Cho +3 more
wiley +1 more source