Results 201 to 210 of about 21,213 (253)

Forward voltage drop and power loss in silicon rectifiers

Transactions of the American Institute of Electrical Engineers Part II Applications and Industry, 1960
The instantaneous forward voltage drop of silicon diodes of different sizes and processes is investigated over four magnitudes of current density. The temperature influence is determined. An equation relating the instantaneous forward voltage drop to current density and junction temperature is given.
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Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop

IEEE Electron Device Letters, 2019
In this letter, fluorine-implanted termination (FIT) has been demonstrated in vertical GaN-on-GaN Schottky barrier diodes (SBDs). Owing to the unique feature of F ions that can become negative fixed charges in GaN, the electric field crowding at the junction edge can be mitigated and the breakdown voltage ( BV ) of the vertical GaN SBDs can be ...
Kuang Sheng, Shu Yang, Shaowen Han
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Effect of aspect ratio on forward voltage drop in trench insulated gate bipolar transistor

Solid-State Electronics, 2005
An analytical model for the carrier density at the accumulation layer of TIGBT (Trench Insulated Gate Transistor) is presented in terms of the aspect ratio with the influence of the depth of the trench gate below the P base taken into account. Based on the model, analytic expressions for the potential drop on the drift region are derived using a linear
Yearn-Ik Choi, Sang-Koo Chung
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A Compensation Method of Dead-Time and Forward Voltage Drop for Inverter Operating at Low Frequency

Journal of Electrical Engineering and Technology, 2019
The dead-time is introduced to prevent the upper and lower power devices of the same leg from conducting simultaneously. However, it will cause the actual output voltage deviate from the desired voltage and the load current distortion will occur, which is especially unexpected when the inverter operates at a low frequency.
Wenxiang Song, Zhao Lingyun
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A brief analysis of the transient forward voltage drop in fast diodes

IEE Proceedings I: Solid State and Electron Devices, 1985
The transient forward voltage drop of fast diodes for medium power circuits is investigated using a computer model. Fast diodes, of both pn and PIN structures, are experimentally examined for a range of electrical and physical parameters. A multiple curvilinear statistical regression was used on the results and an empirical relationship is presented.
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Experimental Demonstration of 1200V SiC-SBDs with Lower Forward Voltage Drop at High Temperature

Materials Science Forum, 2012
The 1200V class silicon carbide Schottky barrier diodes were designed and fabricated. The drift layer resistance was reduced in order to realize low forward voltage drops. Since the low drift layer resistance led to the low breakdown voltage, the avalanche withstanding capability should be enhanced not to cause the destructive breakdown.
Noriyuki Iwamuro, Akimasa Kinoshita, Tsuji Takashi   +2 more
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Low-Forward-Voltage-Drop 4H-SiC BJTs Without Base Contact Implantation

IEEE Transactions on Electron Devices, 2008
Bipolar junction transistors (BJTs) of 4H-SiC, with a low collector-emitter forward voltage drop VCE have been fabricated without base contact implantation. A comparison of BJTs on the same wafer with and without base contact implantation shows less than 10% higher VCE for the BJTs without base contact implantation.
Carl-Mikael Zetterling, Mikael Östling, Hyung-Seok Lee   +2 more
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Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes

Materials Science Forum, 2010
Correlation between carrier lifetime and forward voltage drop in 4H-SiC PiN diodes has been investigated. PiN diodes from the drift layer of 20 m shows breakdown voltage of 3.3 kV and forward voltage drop as low as 3.13 V at 100A/cm2. Variation of calculated forward voltage drop ( ) from measured carrier lifetimes is very comparable to measured of ...
Gilyong Chung, Siddarth G Sundaresan, Ranbir Singh   +2 more
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High-Voltage Electron Injection Enhanced TC-LIGBT on 1.5- $\mu \text{m}$ -Thin SOI Layer for Reducing the Forward Voltage Drop

IEEE Transactions on Electron Devices, 2016
In this paper, a new high-voltage electron injection enhanced tridimensional channel lateral insulated gate bipolar transistor (EIETC-LIGBT) on 1.5- $\mu \text{m}$ -thin silicon-on-insulator (SOI) layer is proposed to reduce the forward voltage drop.
Weifeng Sun, Jing Zhu
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