Results 211 to 220 of about 21,213 (253)

FORWARD VOLTAGE DROP MEASUREMENTS IN PSEUDOSPARK SWITCHES

Ninth IEEE International Pulsed Power Conference, 1993
M Stetter, A Görtler, R Tkotz
exaly   +2 more sources

Precision measurement of forward voltage drop of semiconductor power rectifiers

Measurement Techniques, 1979
V. M. Bardin, A. B. Bartanov, B. V. Volkov   +2 more
exaly   +2 more sources

Comparison of the Forward Voltage Drop of Si and SiC High Voltage Diodes

ECS Meeting Abstracts, 2014
To obtain a high coefficient of efficiency of a converter, the components used to build it should be well chosen. Significant part of the losses is due to the power semiconductor switches. For the same break down voltage, SiC bipolar device have significantly thinner lightly doped drift region (n- base) and therefore low switching losses and also low ...
Tanya Gachovska, Jerry L Hudgins
openaire   +1 more source

Methods for reducing the forward voltage drop in pseudospark switches

Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop., 2003
The paper describes the methods, which can be used in the pseudospark switches to decrease the forward voltage drop in initial glow stages of the discharge burning. The main direction of reducing the discharge burning voltage is a use of a special design of the electrode system and a special design of the cathode cavity.
V.D. Bochkov, V.M. Dyagilev, V.G. Ushich, O.B. Frants, Yu.D. Korolev, I.A. Shemyakin, V.G. Geyman, R.V. Ivashov, N.V. Landl   +8 more
openaire   +1 more source

Design and Fabrication of Low-Leakage Vertical GaN TMBS Rectifier with Low Forward Voltage Drop

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Kuang Sheng, Ce Wang, Hengyu Wang
exaly   +2 more sources

A design concept for the low forward voltage drop 4500 V trench IGBT

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212), 2002
A design concept for a new trench IGBT structure for low forward voltage drop is described. The low forward voltage drop can be achieved by minimizing the p-base region to increase the hole density of the n-base near the emitter side, and by simultaneously keeping MOS channel resistance low.
T. Nitta, A. Uenishi, T. Minato, S. Kusunoki, T. Takahashi, H. Nakamura, K. Nakamura, S. Aono, M. Harada   +8 more
openaire   +1 more source

High-level behavior of power rectifiers: A quantitative analysis of the forward voltage drop

IEEE Transactions on Electron Devices, 1978
In forward biased power rectifiers, quasi-neutrality holds in all regions of the device. As a consequence, numerical analysis of the behavior of the devices can be carried out without involving the treatment of Poisson's equation. This allows fast and accurate computation of the forward J(V) characteristic.
A. Munoz-Yague, P. Leturcq
openaire   +1 more source

Fast‐switching‐speed, low‐forward‐voltage‐drop static induction (SI) thyristor

Electrical Engineering in Japan, 1996
AbstractA static induction (SI) thyristor using a normally‐off planar‐gate structure in a low power class has been developed to be used as a power switching device in a three‐phase inverter circuit. A 600 V‐15 A class SI thyristor with very fast switching time (tgt, tgq) and low forward voltage drop (VTM) was designed and created.
Mitsuhide Maeda, Takuji Keno, Yuji Suzuki, Toshiro Abe   +3 more
openaire   +1 more source

Factors determining forward voltage drop and forward blocking in the field terminated diode (FTD)

1977 International Electron Devices Meeting, 1977
Using exact numercial solutions of the full set of semiconductor device equations the field terminated diode (FTD) structure is investigated. It is shown that the grid structure reduces current flow by causing the electron current to funnel around the grid and at the same time diverting hole current through the grid.
openaire   +1 more source

Dual-channel SOI LIGBT with improved latch-up and forward voltage drop characteristics

Device Research Conference. Conference Digest (Cat. No.01TH8561), 2002
To improve latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT), a new dual-channel structure is proposed and fabricated in this paper. The dual-channel structure is employed to enable more electrons to flow into the n-drift layer and improve the latch-up characteristic.
null Woo-Beom Choi, null Woong-Je Sung, null Yong-Il Lee, null Man Young Sung   +3 more
openaire   +1 more source