Results 221 to 230 of about 21,213 (253)

Factors determining forward voltage drop in the field-terminated diode (FTD)

IEEE Transactions on Electron Devices, 1978
Recently, there has been a revival of interest in a device first introduced in the early sixties and called the "gridistor" and currently referred to as the "FTD." The FTD offers the promise of low forward drop of the SCR together with the higher switching speeds and freedom from dV/dt and di/dt problems of the transistor.
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EXPERIMENTAL DEMONSTRATION OF 1200V SiC-SBDs WITH LOWER FORWARD VOLTAGE DROP AT HIGH TEMPERATURE

SAE Technical Paper Series, 2011
<div class="section abstract"><div class="htmlview paragraph">The 1200V class silicon carbide Schottky barrier diodes were designed and fabricated. The drift layer resistance was reduced in order to realize low forward voltage drops. Since the low drift layer resistance led to the low breakdown voltage, the avalanche withstanding capability
Takashi Tsuji, Akimasa Kinoshita, Noriyuki Iwamuro, Kenji Fukuda, Hiroshi Kimura   +4 more
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Electron irradiation for adjusting the reverse recovery time and forward voltage drop characteristics of fast diodes

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1998
Abstract The electron linear accelerator ALIN-10 has been used to irradiate at room temperature and high temperature silicon diodes type BA159, BAX157 and 6DRR1 (manufacturer – Baneasa S.A.-factory 2300, Romania). The influence of 10 MeV electron irradiation upon the main electrical characteristics (reverse recovery time, forward voltage, reverse ...
Elena Iliescu, Anastase Niculescu, Viorel Banu, Anca Nichita, Nicoleta Sturzu   +4 more
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Correlation between forward voltage drop and local carrier lifetime for a large area segmented thyristor

IEEE Transactions on Electron Devices, 1995
The forward voltage drop for individual segments of a large area thyristor has been correlated to the local, bulk carrier lifetime by lifetime mapping of the the wafer after final device processing. The lifetime mapping was performed under high injection conditions using an all-optical technique where carriers were generated by a short YAG laser pulse ...
J. Linnros, R. Revsater, L. Heijkenskjold, P. Norlin   +3 more
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Forward voltage drop across a PN junction diode at high current densities †

International Journal of Electronics, 1971
Abstract To calculate the forward voltage drop across a PN junction diode at high current densities, it is necessary to either solve a system of non-linear differential equations by numerical methods for specific cases or to approximate the electric field in the bulk to obtain closed form solutions.
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Forward voltage drop degradation in diffused SiC p-i-n diodes

Journal of Applied Physics, 2004
The time varying relationship between forward voltage drop and temperature in degrading diffused 4H–SiC p-i-n diodes was used to estimate the activation energy (0.34 eV) of the degradation process associated with the formation of stacking faults (SFs).
S. Soloviev, D. Cherednichenko, Y. Gao, A. Grekov, Y. Ma, T. S. Sudarshan   +5 more
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Excess carrier density and forward voltage drop in trench insulated gate bipolar transistor (TIGBT)

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595), 2003
Decrease in the forward voltage drop due to the enhanced carrier density at the cathode side of the trench insulated gate transistor (TIGBT) is studied as a function of the aspect ratio between the accumulation layer and cell size as well as the applied gate voltage and compared with those for the planar DMOS-IGBT.
null Hyoung-Woo Kim, null Min-Su Kim, null Yearn-Ik Choi, null Sang-Koo Chung   +3 more
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Compensation of the effects of the forward voltage drop of power switches on direct torque controlled synchronous machine drive

IEEE International Electric Machines and Drives Conference, 2003. IEMDC'03., 2003
The direct torque control scheme is an outstanding scheme based on space vector theory. However, at low speed, the performance is not so desirable. The effect of forward voltage drop and dead-time are analyzed and compensated in this paper. Modeling results show that the blindness to the forward voltage drop of the power switches may cause oscillation ...
null Lixin Tang, M.F. Rahman
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Effect of anisotropic material properties on the forward voltage drop in 6H- and 4H-SiC power diode structures

Semiconductor Science and Technology, 1999
It is demonstrated by numerical simulation that the anisotropic material properties of 6H-SiC can have an important effect on the forward voltage drop of 10 kV 6H-SiC power diodes. A pronounced difference in the carrier distribution was seen for substrates with the surface normal parallel or orthogonal to the c-axis.
O Tornblad, M Östling, U Lindefelt, B Breitholtz   +3 more
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The graded doped trench MOS Barrier Schottky rectifier: a low forward drop high voltage rectifier

Solid-State Electronics, 1999
Abstract A novel high voltage Schottky rectifier, called the Graded Doped Trench MOS Barrier Schottky (GD-TMBS) rectifier, is described in this paper. It is shown to have very low forward drop with excellent reverse blocking characteristics through device simulation and electrical characterization of fabricated devices. A linearly graded drift region
Srikanth Mahalingam, B.Jayant Baliga
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