Results 241 to 250 of about 2,210,716 (290)
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IEEE Electron Device Letters, 2019
In this letter, fluorine-implanted termination (FIT) has been demonstrated in vertical GaN-on-GaN Schottky barrier diodes (SBDs). Owing to the unique feature of F ions that can become negative fixed charges in GaN, the electric field crowding at the junction edge can be mitigated and the breakdown voltage ( BV ) of the vertical GaN SBDs can be ...
Kuang Sheng, Shu Yang, Shaowen Han
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In this letter, fluorine-implanted termination (FIT) has been demonstrated in vertical GaN-on-GaN Schottky barrier diodes (SBDs). Owing to the unique feature of F ions that can become negative fixed charges in GaN, the electric field crowding at the junction edge can be mitigated and the breakdown voltage ( BV ) of the vertical GaN SBDs can be ...
Kuang Sheng, Shu Yang, Shaowen Han
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A Compensation Method of Dead-Time and Forward Voltage Drop for Inverter Operating at Low Frequency
Journal of Electrical Engineering and Technology, 2019The dead-time is introduced to prevent the upper and lower power devices of the same leg from conducting simultaneously. However, it will cause the actual output voltage deviate from the desired voltage and the load current distortion will occur, which is especially unexpected when the inverter operates at a low frequency.
Wenxiang Song, Lingyun Zhao, Jiuyi Feng
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A Brief Analysis of the Transient Forward Voltage Drop in Fast Diodes
IEE Proceedings I: Solid State and Electron Devices, 1985The transient forward voltage drop of fast diodes for medium power circuits is investigated using a computer model. Fast diodes, of both pn and PIN structures, are experimentally examined for a range of electrical and physical parameters. A multiple curvilinear statistical regression was used on the results and an empirical relationship is presented.
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Effect of Aspect Ratio on Forward Voltage Drop in Trench Insulated Gate Bipolar Transistor
Solid-State Electronics, 2005An analytical model for the carrier density at the accumulation layer of TIGBT (Trench Insulated Gate Transistor) is presented in terms of the aspect ratio with the influence of the depth of the trench gate below the P base taken into account. Based on the model, analytic expressions for the potential drop on the drift region are derived using a linear
Yearn-Ik Choi, Sang-Koo Chung
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Correlation Between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes
Materials Science Forum, 2010Correlation between carrier lifetime and forward voltage drop in 4H-SiC PiN diodes has been investigated. PiN diodes from the drift layer of 20 m shows breakdown voltage of 3.3 kV and forward voltage drop as low as 3.13 V at 100A/cm2. Variation of calculated forward voltage drop ( ) from measured carrier lifetimes is very comparable to measured of ...
Gilyong Chung +2 more
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High Current Characteristics of Asymmetrical p-i-n Diodes Having Low Forward Voltage Drops
IEEE Transactions on Electron Devices, 1976A closed form solution for the forward characteristics of a very asymmetrical step-junction p-i-n diode at high current levels is derived and discussed. It is found that the forward voltage decreases significantly when the amount of the impurities per unit area of one of the highly doped regions is reduced.
M. Naito, H. Matsuzaki, T. Ogawa
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2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2017 Commercially available light emitting diodes (LEDs) that have high efficiencies and long lifetime are offered in advanced packaging technologies. Many cooling systems were developed for current LED systems that enable a better removal of heat than counterpart devices offered earlier this decade.
Muslu, Ahmet Mete +3 more
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IEEE International Electric Machines and Drives Conference, 2003. IEMDC'03., 2003
The direct torque control scheme is an outstanding scheme based on space vector theory. However, at low speed, the performance is not so desirable. The effect of forward voltage drop and dead-time are analyzed and compensated in this paper. Modeling results show that the blindness to the forward voltage drop of the power switches may cause oscillation ...
Lixin Tang, M F Rahman
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The direct torque control scheme is an outstanding scheme based on space vector theory. However, at low speed, the performance is not so desirable. The effect of forward voltage drop and dead-time are analyzed and compensated in this paper. Modeling results show that the blindness to the forward voltage drop of the power switches may cause oscillation ...
Lixin Tang, M F Rahman
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2007 7th Internatonal Conference on Power Electronics, 2007
The performance of direct torque control (DTC) interior permanent magnet (IPM) machines at low speed is poor due to a few reasons, namely limited accuracy of stator voltage acquisition and the presence of offset and drift components in the acquired signals.
By Professor Faz Rahman, Saad Sayeef
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The performance of direct torque control (DTC) interior permanent magnet (IPM) machines at low speed is poor due to a few reasons, namely limited accuracy of stator voltage acquisition and the presence of offset and drift components in the acquired signals.
By Professor Faz Rahman, Saad Sayeef
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Forward Voltage Drop Measurements in Pseudospark Switches
Ninth IEEE International Pulsed Power Conference, 1993M Stetter, A Görtler, R Tkotz
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