Results 241 to 250 of about 179,194 (295)

Methods for reducing the forward voltage drop in pseudospark switches

Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop., 2003
The paper describes the methods, which can be used in the pseudospark switches to decrease the forward voltage drop in initial glow stages of the discharge burning. The main direction of reducing the discharge burning voltage is a use of a special design of the electrode system and a special design of the cathode cavity.
V.D. Bochkov, V.M. Dyagilev, V.G. Ushich, O.B. Frants, Yu.D. Korolev, I.A. Shemyakin, V.G. Geyman, R.V. Ivashov, N.V. Landl   +8 more
openaire   +1 more source

Comparison of the Forward Voltage Drop of Si and SiC High Voltage Diodes

ECS Meeting Abstracts, 2014
To obtain a high coefficient of efficiency of a converter, the components used to build it should be well chosen. Significant part of the losses is due to the power semiconductor switches. For the same break down voltage, SiC bipolar device have significantly thinner lightly doped drift region (n- base) and therefore low switching losses and also low ...
Tanya Gachovska, Jerry L Hudgins
openaire   +1 more source

Fast-Switching-Speed, Low-Forward-Voltage-Drop Static Induction(SI) Thyristor.

IEEJ Transactions on Industry Applications, 1995
An SI thyristor using a normally-off planar-gate structure in a low power class has been developed for the use as a power switching device in a three-phase inverter circuit. A 600V-15A class SI thyristor with very fast switching time (tgt, tgq) and low forward voltage drop (VTM) was designed and fabricated.
Mitsuhide Maeda, Takuji Keno, Yuji Suzuki, Toshiro Abe   +3 more
openaire   +1 more source

Low-Forward-Voltage-Drop 4H-SiC BJTs Without Base Contact Implantation

IEEE Transactions on Electron Devices, 2008
Bipolar junction transistors (BJTs) of 4H-SiC, with a low collector-emitter forward voltage drop VCE have been fabricated without base contact implantation. A comparison of BJTs on the same wafer with and without base contact implantation shows less than 10% higher VCE for the BJTs without base contact implantation.
Hyung-Seok Lee, Martin Domeij, Carl-Mikael Zetterling, Mikael Ostling   +3 more
openaire   +1 more source

Fast‐switching‐speed, low‐forward‐voltage‐drop static induction (SI) thyristor

Electrical Engineering in Japan, 1996
AbstractA static induction (SI) thyristor using a normally‐off planar‐gate structure in a low power class has been developed to be used as a power switching device in a three‐phase inverter circuit. A 600 V‐15 A class SI thyristor with very fast switching time (tgt, tgq) and low forward voltage drop (VTM) was designed and created.
Mitsuhide Maeda, Takuji Keno, Yuji Suzuki, Toshiro Abe   +3 more
openaire   +1 more source

Forward voltage drop degradation in diffused SiC p-i-n diodes

Journal of Applied Physics, 2004
The time varying relationship between forward voltage drop and temperature in degrading diffused 4H–SiC p-i-n diodes was used to estimate the activation energy (0.34 eV) of the degradation process associated with the formation of stacking faults (SFs).
S. Soloviev, D. Cherednichenko, Y. Gao, A. Grekov, Y. Ma, T. S. Sudarshan   +5 more
openaire   +1 more source

A design concept for the low forward voltage drop 4500 V trench IGBT

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212), 2002
A design concept for a new trench IGBT structure for low forward voltage drop is described. The low forward voltage drop can be achieved by minimizing the p-base region to increase the hole density of the n-base near the emitter side, and by simultaneously keeping MOS channel resistance low.
T. Nitta, A. Uenishi, T. Minato, S. Kusunoki, T. Takahashi, H. Nakamura, K. Nakamura, S. Aono, M. Harada   +8 more
openaire   +1 more source

Dual-channel SOI LIGBT with improved latch-up and forward voltage drop characteristics

Device Research Conference. Conference Digest (Cat. No.01TH8561), 2002
To improve latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT), a new dual-channel structure is proposed and fabricated in this paper. The dual-channel structure is employed to enable more electrons to flow into the n-drift layer and improve the latch-up characteristic.
null Woo-Beom Choi, null Woong-Je Sung, null Yong-Il Lee, null Man Young Sung   +3 more
openaire   +1 more source

Factors determining forward voltage drop and forward blocking in the field terminated diode (FTD)

1977 International Electron Devices Meeting, 1977
Using exact numercial solutions of the full set of semiconductor device equations the field terminated diode (FTD) structure is investigated. It is shown that the grid structure reduces current flow by causing the electron current to funnel around the grid and at the same time diverting hole current through the grid.
openaire   +1 more source

High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

Japanese Journal of Applied Physics, 2015
In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure.
Doohyung Cho, Seulgi Sim, Kunsik Park, Jongil Won, Sanggi Kim, Kwangsoo Kim   +5 more
openaire   +1 more source