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The graded doped trench MOS Barrier Schottky rectifier: a low forward drop high voltage rectifier
Solid-State Electronics, 1999Abstract A novel high voltage Schottky rectifier, called the Graded Doped Trench MOS Barrier Schottky (GD-TMBS) rectifier, is described in this paper. It is shown to have very low forward drop with excellent reverse blocking characteristics through device simulation and electrical characterization of fabricated devices. A linearly graded drift region
Srikanth Mahalingam, B.Jayant Baliga
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IEEE Transactions on Electron Devices, 1995
The forward voltage drop for individual segments of a large area thyristor has been correlated to the local, bulk carrier lifetime by lifetime mapping of the the wafer after final device processing. The lifetime mapping was performed under high injection conditions using an all-optical technique where carriers were generated by a short YAG laser pulse ...
J. Linnros +3 more
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The forward voltage drop for individual segments of a large area thyristor has been correlated to the local, bulk carrier lifetime by lifetime mapping of the the wafer after final device processing. The lifetime mapping was performed under high injection conditions using an all-optical technique where carriers were generated by a short YAG laser pulse ...
J. Linnros +3 more
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1998
Abstract The electron linear accelerator ALIN-10 has been used to irradiate at room temperature and high temperature silicon diodes type BA159, BAX157 and 6DRR1 (manufacturer – Baneasa S.A.-factory 2300, Romania). The influence of 10 MeV electron irradiation upon the main electrical characteristics (reverse recovery time, forward voltage, reverse ...
Elena Iliescu +4 more
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Abstract The electron linear accelerator ALIN-10 has been used to irradiate at room temperature and high temperature silicon diodes type BA159, BAX157 and 6DRR1 (manufacturer – Baneasa S.A.-factory 2300, Romania). The influence of 10 MeV electron irradiation upon the main electrical characteristics (reverse recovery time, forward voltage, reverse ...
Elena Iliescu +4 more
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Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212), 2002
A novel high voltage Schottky rectifier, called the graded doped trench MOS barrier Schottky (GD-TMBS) rectifier, is described in this paper. A linearly graded drift region doping profile is shown to result in a uniform electric field in the drift region, resulting in the ability to support blocking voltages proportional to the trench depth.
S. Mahalingam, B.J. Baliga
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A novel high voltage Schottky rectifier, called the graded doped trench MOS barrier Schottky (GD-TMBS) rectifier, is described in this paper. A linearly graded drift region doping profile is shown to result in a uniform electric field in the drift region, resulting in the ability to support blocking voltages proportional to the trench depth.
S. Mahalingam, B.J. Baliga
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Semiconductor Science and Technology, 1999
It is demonstrated by numerical simulation that the anisotropic material properties of 6H-SiC can have an important effect on the forward voltage drop of 10 kV 6H-SiC power diodes. A pronounced difference in the carrier distribution was seen for substrates with the surface normal parallel or orthogonal to the c-axis.
O Tornblad +3 more
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It is demonstrated by numerical simulation that the anisotropic material properties of 6H-SiC can have an important effect on the forward voltage drop of 10 kV 6H-SiC power diodes. A pronounced difference in the carrier distribution was seen for substrates with the surface normal parallel or orthogonal to the c-axis.
O Tornblad +3 more
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IEEE International Electric Machines and Drives Conference, 2003. IEMDC'03., 2003
The direct torque control scheme is an outstanding scheme based on space vector theory. However, at low speed, the performance is not so desirable. The effect of forward voltage drop and dead-time are analyzed and compensated in this paper. Modeling results show that the blindness to the forward voltage drop of the power switches may cause oscillation ...
null Lixin Tang, M.F. Rahman
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The direct torque control scheme is an outstanding scheme based on space vector theory. However, at low speed, the performance is not so desirable. The effect of forward voltage drop and dead-time are analyzed and compensated in this paper. Modeling results show that the blindness to the forward voltage drop of the power switches may cause oscillation ...
null Lixin Tang, M.F. Rahman
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2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2017
Commercially available light emitting diodes (LEDs) that have high efficiencies and long lifetime are offered in advanced packaging technologies. Many cooling systems were developed for current LED systems that enable a better removal of heat than counterpart devices offered earlier this decade.
Muslu, Ahmet Mete +3 more
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Commercially available light emitting diodes (LEDs) that have high efficiencies and long lifetime are offered in advanced packaging technologies. Many cooling systems were developed for current LED systems that enable a better removal of heat than counterpart devices offered earlier this decade.
Muslu, Ahmet Mete +3 more
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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics, 2002
A new 550 V AlGaAs/GaAs Hetero source Bipolar mode Static Induction Transistor (HBSIT) has recently been developed and fabricated. The GaAs HBSIT is considered to be superior to conventional Silicon power devices in on-state characteristics. For an example, forward voltage drop of 0.3 V can be obtained at current gain of 150 and drain current density ...
K. Nonaka +4 more
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A new 550 V AlGaAs/GaAs Hetero source Bipolar mode Static Induction Transistor (HBSIT) has recently been developed and fabricated. The GaAs HBSIT is considered to be superior to conventional Silicon power devices in on-state characteristics. For an example, forward voltage drop of 0.3 V can be obtained at current gain of 150 and drain current density ...
K. Nonaka +4 more
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Materials Science Forum, 2006
For SiC devices capable of blocking very high voltages (>4kV), it becomes imperative to use bipolar devices because of unacceptably large on-state losses of unipolar devices. The IGBT offers the potential for high current density operation and ease of turn off using a MOS gate structure.
Lin Zhu, T. Paul Chow
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For SiC devices capable of blocking very high voltages (>4kV), it becomes imperative to use bipolar devices because of unacceptably large on-state losses of unipolar devices. The IGBT offers the potential for high current density operation and ease of turn off using a MOS gate structure.
Lin Zhu, T. Paul Chow
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