Results 261 to 270 of about 2,210,716 (290)

Forward voltage drop across a PN junction diode at high current densities †

International Journal of Electronics, 1971
Abstract To calculate the forward voltage drop across a PN junction diode at high current densities, it is necessary to either solve a system of non-linear differential equations by numerical methods for specific cases or to approximate the electric field in the bulk to obtain closed form solutions.
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Correlation between forward voltage drop and local carrier lifetime for a large area segmented thyristor

IEEE Transactions on Electron Devices, 1995
The forward voltage drop for individual segments of a large area thyristor has been correlated to the local, bulk carrier lifetime by lifetime mapping of the the wafer after final device processing. The lifetime mapping was performed under high injection conditions using an all-optical technique where carriers were generated by a short YAG laser pulse ...
J. Linnros, R. Revsater, L. Heijkenskjold, P. Norlin   +3 more
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Forward voltage drop degradation in diffused SiC p-i-n diodes

Journal of Applied Physics, 2004
The time varying relationship between forward voltage drop and temperature in degrading diffused 4H–SiC p-i-n diodes was used to estimate the activation energy (0.34 eV) of the degradation process associated with the formation of stacking faults (SFs).
S. Soloviev, D. Cherednichenko, Y. Gao, A. Grekov, Y. Ma, T. S. Sudarshan   +5 more
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Excess carrier density and forward voltage drop in trench insulated gate bipolar transistor (TIGBT)

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595), 2003
Decrease in the forward voltage drop due to the enhanced carrier density at the cathode side of the trench insulated gate transistor (TIGBT) is studied as a function of the aspect ratio between the accumulation layer and cell size as well as the applied gate voltage and compared with those for the planar DMOS-IGBT.
null Hyoung-Woo Kim, null Min-Su Kim, null Yearn-Ik Choi, null Sang-Koo Chung   +3 more
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High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

Japanese Journal of Applied Physics, 2015
In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure.
Doohyung Cho, Seulgi Sim, Kunsik Park, Jongil Won, Sanggi Kim, Kwangsoo Kim   +5 more
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The graded doped trench MOS Barrier Schottky rectifier: a low forward drop high voltage rectifier

Solid-State Electronics, 1999
Abstract A novel high voltage Schottky rectifier, called the Graded Doped Trench MOS Barrier Schottky (GD-TMBS) rectifier, is described in this paper. It is shown to have very low forward drop with excellent reverse blocking characteristics through device simulation and electrical characterization of fabricated devices. A linearly graded drift region
Srikanth Mahalingam, B.Jayant Baliga
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Effect of anisotropic material properties on the forward voltage drop in 6H- and 4H-SiC power diode structures

Semiconductor Science and Technology, 1999
It is demonstrated by numerical simulation that the anisotropic material properties of 6H-SiC can have an important effect on the forward voltage drop of 10 kV 6H-SiC power diodes. A pronounced difference in the carrier distribution was seen for substrates with the surface normal parallel or orthogonal to the c-axis.
O Tornblad, M Östling, U Lindefelt, B Breitholtz   +3 more
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High-Voltage Electron Injection Enhanced TC-LIGBT on 1.5- $\mu \text{m}$ -Thin SOI Layer for Reducing the Forward Voltage Drop

IEEE Transactions on Electron Devices, 2016
In this paper, a new high-voltage electron injection enhanced tridimensional channel lateral insulated gate bipolar transistor (EIETC-LIGBT) on 1.5- $\mu \text{m}$ -thin silicon-on-insulator (SOI) layer is proposed to reduce the forward voltage drop.
Jing Zhu, Zhuo Yang, Weifeng Sun, Hui Yu, Jincheng Zhou, Yi Sun   +5 more
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A low forward drop high voltage trench MOS barrier Schottky rectifier with linearly graded doping profile

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212), 2002
A novel high voltage Schottky rectifier, called the graded doped trench MOS barrier Schottky (GD-TMBS) rectifier, is described in this paper. A linearly graded drift region doping profile is shown to result in a uniform electric field in the drift region, resulting in the ability to support blocking voltages proportional to the trench depth.
S. Mahalingam, B.J. Baliga
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A direct torque controlled interior permanent magnet synchronous machine drive with compensation of the forward voltage drops of the power switches

38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003., 2004
The direct torque control (DTC) scheme is a new control scheme based on space vector theory. However, at low speed, the performance is not very good. The effect of forward voltage drop on DTC performance at low speed is analyzed and compensated in this paper. Modeling results show that the blindness to the forward voltage drop of the power switches may
null Lixin Tang, M.F. Rahman
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