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Materials Science Forum, 2006
For SiC devices capable of blocking very high voltages (>4kV), it becomes imperative to use bipolar devices because of unacceptably large on-state losses of unipolar devices. The IGBT offers the potential for high current density operation and ease of turn off using a MOS gate structure.
Lin Zhu, T. Paul Chow
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For SiC devices capable of blocking very high voltages (>4kV), it becomes imperative to use bipolar devices because of unacceptably large on-state losses of unipolar devices. The IGBT offers the potential for high current density operation and ease of turn off using a MOS gate structure.
Lin Zhu, T. Paul Chow
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Precision measurement of forward voltage drop of semiconductor power rectifiers
Measurement Techniques, 1979V. M. Bardin +2 more
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6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop
Materials Science Forum, 2000Yoshitaka Sugawara +3 more
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Portable instrument for measuring the forward voltage drop of semiconductor power devices
Measurement Techniques, 1980V. M. Bardin +3 more
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The Influence of Anodic Transition Structures of Power Devices for Forward Voltage Drop
Известия высших учебных заведений. Электромеханика, 2015Vladimir Lozovskiy +2 more
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Corrections to "Low-Forward-Voltage-Drop 4H-SiC BJTs Without Base Contact Implantation"
IEEE Transactions on Electron Devices, 2008Hyung-Seok Lee +3 more
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LOW FORWARD VOLTAGE DROP TRANSIENT VOLTAGE SUPPRESSOR AND METHOD OF FABRICATING
2008KAO LUNG-CHING, KUNG PU-JU, YU YU-JU
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The Pinch Rectifier: A Low-Forward-Drop High-Speed Power Diode
IEEE Electron Device Letters, 1984B J Baliga
exaly
IGBT with reduced forward voltage drop and reduced switching loss
2000FRANCIS RICHARD, MERRILL PERRY L
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Design and Fabrication of Low-Leakage Vertical GaN TMBS Rectifier with Low Forward Voltage Drop
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)Yanjun Li +7 more
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