Results 231 to 240 of about 21,213 (253)
Some of the next articles are maybe not open access.

High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

Japanese Journal of Applied Physics, 2015
In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure.
Doohyung Cho   +5 more
openaire   +1 more source

High current characteristics of asymmetrical p-i-n diodes having low forward voltage drops

IEEE Transactions on Electron Devices, 1976
A closed form solution for the forward characteristics of a very asymmetrical step-junction p-i-n diode at high current levels is derived and discussed. It is found that the forward voltage decreases significantly when the amount of the impurities per unit area of one of the highly doped regions is reduced.
M. Naito, H. Matsuzaki, T. Ogawa
openaire   +1 more source

A low forward drop high voltage trench MOS barrier Schottky rectifier with linearly graded doping profile

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212), 2002
A novel high voltage Schottky rectifier, called the graded doped trench MOS barrier Schottky (GD-TMBS) rectifier, is described in this paper. A linearly graded drift region doping profile is shown to result in a uniform electric field in the drift region, resulting in the ability to support blocking voltages proportional to the trench depth.
S. Mahalingam, B.J. Baliga
openaire   +1 more source

A direct torque controlled interior permanent magnet synchronous machine drive with compensation of the forward voltage drops of the power switches

38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003., 2004
The direct torque control (DTC) scheme is a new control scheme based on space vector theory. However, at low speed, the performance is not very good. The effect of forward voltage drop on DTC performance at low speed is analyzed and compensated in this paper. Modeling results show that the blindness to the forward voltage drop of the power switches may
null Lixin Tang, M.F. Rahman
openaire   +1 more source

Simulation of High-Voltage Injection-Enhanced 4H-SiC N-Channel IGBTs with Forward Drop Approaching that of a PiN Junction Rectifier

Materials Science Forum, 2006
For SiC devices capable of blocking very high voltages (>4kV), it becomes imperative to use bipolar devices because of unacceptably large on-state losses of unipolar devices. The IGBT offers the potential for high current density operation and ease of turn off using a MOS gate structure.
Lin Zhu, T. Paul Chow
openaire   +1 more source

Impact of junction temperature over forward voltage drop for red, blue and green high power light emitting diode chips

2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2017
Commercially available light emitting diodes (LEDs) that have high efficiencies and long lifetime are offered in advanced packaging technologies. Many cooling systems were developed for current LED systems that enable a better removal of heat than counterpart devices offered earlier this decade.
Muslu, Ahmet Mete   +3 more
openaire   +2 more sources

Improved low speed performance of a PI-DTC interior PM machine with compensations of dead-time effects and forward voltage drops

2007 7th Internatonal Conference on Power Electronics, 2007
The performance of direct torque control (DTC) interior permanent magnet (IPM) machines at low speed is poor due to a few reasons, namely limited accuracy of stator voltage acquisition and the presence of offset and drift components in the acquired signals.
Saad Sayeef, M. F. Rahman
openaire   +1 more source

6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop

Materials Science Forum, 2000
Yoshitaka Sugawara   +3 more
openaire   +1 more source

The Influence of Anodic Transition Structures of Power Devices for Forward Voltage Drop

Известия высших учебных заведений. Электромеханика, 2015
Vladimir Lozovskiy   +2 more
openaire   +1 more source

Portable instrument for measuring the forward voltage drop of semiconductor power devices

Measurement Techniques, 1980
V. M. Bardin   +3 more
openaire   +1 more source

Home - About - Disclaimer - Privacy