Results 231 to 240 of about 2,210,716 (290)

High-precision hyperdimensional computing enabled by in-memory computing using high-polarization ferroelectric Hf_0.5Zr_0.5O₂ capacitors. [PDF]

Microsyst Nanoeng
Paasio E, Thomann S, Anu A, Li X, Ranta R, Srivari P, Muhammad S, Mazumder S, Mariam J, Padovani A, Amrouch H, Thareja G, Majumdar S.   +12 more
europepmc   +1 more source

A Personal Perspective on the Technological and Commercial Development of Nanospray and Nanobore LC-MS. [PDF]

J Am Soc Mass Spectrom
Valaskovic GA.
europepmc   +1 more source

Polarity-Controlled Coexistence of Electrochemical Metallization and Valence Change Mechanisms in a Unified Metal Halide Perovskite Memristor. [PDF]

Adv Sci (Weinh)
Fernandez-Guillen I, Solis OE, Betancur PF, Abargues R, Boix PP.   +4 more
europepmc   +1 more source

Bioinspired Mechanosensitive Organic Artificial Neuron With Programmable Excitatory and Inhibitory Responses via Nonlinear Mechano-Electrochemical Coupling. [PDF]

Adv Mater
Boukraa R, Belleri P, Kovács-Vajna ZM, Gkoupidenis P, Torricelli F.   +4 more
europepmc   +1 more source

Integration of Reconfigurable p-Bit and 1R Crossbar Array for Memristive Probabilistic Computing. [PDF]

Adv Sci (Weinh)
Soh K, Kim JE, Chun SY, Hwang SI, Kim BS, Lee YJ, Jang HW, Yoon JH.   +7 more
europepmc   +1 more source

An Improved Continuous Control Set Model Predictive Current Control Algorithm for Permanent Magnet Synchronous Motor. [PDF]

Sensors (Basel)
Yu W, Bo D, Han Y, Han J, Duan Y, Wang X, Lin P.   +6 more
europepmc   +1 more source

Low-Forward-Voltage-Drop 4H-SiC BJTs Without Base Contact Implantation

IEEE Transactions on Electron Devices, 2008
Bipolar junction transistors (BJTs) of 4H-SiC, with a low collector-emitter forward voltage drop VCE have been fabricated without base contact implantation. A comparison of BJTs on the same wafer with and without base contact implantation shows less than 10% higher VCE for the BJTs without base contact implantation.
Hyung-Seok Lee, Martin Domeij, Carl-Mikael Zetterling, Mikael Ostling   +3 more
openaire   +2 more sources

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Forward Voltage Drop and Power Loss in Silicon Rectifiers

Transactions of the American Institute of Electrical Engineers Part II Applications and Industry, 1960
The instantaneous forward voltage drop of silicon diodes of different sizes and processes is investigated over four magnitudes of current density. The temperature influence is determined. An equation relating the instantaneous forward voltage drop to current density and junction temperature is given.
exaly   +2 more sources

Experimental Demonstration of 1200V SiC-SBDs With Lower Forward Voltage Drop at High Temperature

Materials Science Forum, 2012
The 1200V class silicon carbide Schottky barrier diodes were designed and fabricated. The drift layer resistance was reduced in order to realize low forward voltage drops. Since the low drift layer resistance led to the low breakdown voltage, the avalanche withstanding capability should be enhanced not to cause the destructive breakdown.
Noriyuki Iwamuro, Akimasa Kinoshita, Kazuo Tezuka   +2 more
exaly   +2 more sources