Results 231 to 240 of about 179,194 (295)

High-retention sodium supercapacitors with sodium hexametaphosphate-controlled water-processable/non-flammable sodium-ion solid-state electrolytes. [PDF]

Microsyst Nanoeng
Murukadas D, Park D, Kim M, Kim H, Kim Y.   +4 more
europepmc   +1 more source

High-gain boost-type switched capacitor nine-level inverter topology with reduced device count. [PDF]

Sci Rep
Alaas Z.
europepmc   +1 more source

Multistate Kinetic Model of the Sodium-Potassium ATPase. [PDF]

J Phys Chem B
Guerra J, Rui H, Roux B.
europepmc   +1 more source

Design of a Low-Power RFID Sensor System Based on RF Energy Harvesting and Anti-Collision Algorithm. [PDF]

Sensors (Basel)
Mao X, Zhu X, Lei J.
europepmc   +1 more source

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Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop

IEEE Electron Device Letters, 2019
In this letter, fluorine-implanted termination (FIT) has been demonstrated in vertical GaN-on-GaN Schottky barrier diodes (SBDs). Owing to the unique feature of F ions that can become negative fixed charges in GaN, the electric field crowding at the junction edge can be mitigated and the breakdown voltage ( BV ) of the vertical GaN SBDs can be ...
Shaowen Han, Shu Yang, Kuang Sheng
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Forward voltage drop and power loss in silicon rectifiers

Transactions of the American Institute of Electrical Engineers, Part II: Applications and Industry, 1960
The instantaneous forward voltage drop of silicon diodes of different sizes and processes is investigated over four magnitudes of current density. The temperature influence is determined. An equation relating the instantaneous forward voltage drop to current density and junction temperature is given.
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A Compensation Method of Dead-Time and Forward Voltage Drop for Inverter Operating at Low Frequency

Journal of Electrical Engineering & Technology, 2019
The dead-time is introduced to prevent the upper and lower power devices of the same leg from conducting simultaneously. However, it will cause the actual output voltage deviate from the desired voltage and the load current distortion will occur, which is especially unexpected when the inverter operates at a low frequency.
Lingyun Zhao, Wenxiang Song, Jiuyi Feng
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High-Voltage Electron Injection Enhanced TC-LIGBT on 1.5- $\mu \text{m}$ -Thin SOI Layer for Reducing the Forward Voltage Drop

IEEE Transactions on Electron Devices, 2016
In this paper, a new high-voltage electron injection enhanced tridimensional channel lateral insulated gate bipolar transistor (EIETC-LIGBT) on 1.5- $\mu \text{m}$ -thin silicon-on-insulator (SOI) layer is proposed to reduce the forward voltage drop.
Jing Zhu, Zhuo Yang, Weifeng Sun, Hui Yu, Jincheng Zhou, Yi Sun   +5 more
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