Results 141 to 150 of about 11,813 (260)

Photovoltaic Effect in a III‐IV‐V Compound Semiconductor

open access: yesProgress in Photovoltaics: Research and Applications, EarlyView.
A large reduction of the GaAs band gap is obtained with incorporation of 6.5% Ge during epitaxy without introducing extended defects or composition inhomogeneity. Heterojunction solar cell devices were fabricated with 0.76‐V open circuit voltage and an internal quantum efficiency above 40% at energies below the bandgap of the GaAs emitter.
José M. Ripalda   +13 more
wiley   +1 more source

Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen Implantation. [PDF]

open access: yesSmall
Denis N   +11 more
europepmc   +1 more source

Field-tunable charge confinement in III-V layered nanowire-array superlattices. [PDF]

open access: yesSci Rep
Méndez-Camacho R   +2 more
europepmc   +1 more source

Wet‐Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

open access: yesphysica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi   +8 more
wiley   +1 more source

Porous Modified Calcium Carbonate as an Efficient Carrier for Gallic and Ascorbic Acids in Humidity‐Activated Oxygen Scavenging Systems

open access: yesPackaging Technology and Science, EarlyView.
Porous modified calcium carbonate (MCC) is presented as an efficient carrier for humidity‐activated oxygen scavengers based on gallic acid and ascorbic acid. The porous MCC structure preserves high accessibility of the active compounds, enabling effective oxygen scavenging under high relative humidity, with performance governed by loading level ...
Nastasia M. Coray   +6 more
wiley   +1 more source

Interlayer‐Catalyst Method for Metal‐Assisted Chemical Etching of Ultra‐High Aspect Ratio Silicon Nanostructures

open access: yesSmall Methods, EarlyView.
An advanced patterning method is presented for metal‐assisted chemical etching. The interlayer replaces the resist and enables catalyst deposition on a clean interface. The prepared samples show improved performance with a more reproducible etching profile, higher aspect ratio, and increased consistency over a larger area.
Bryan Peter Jost Benz   +2 more
wiley   +1 more source

Home - About - Disclaimer - Privacy