Numerical investigation of ultrathin CIGS solar cells featuring SiO<sub>2</sub>/GaAs double rear passivation. [PDF]
Jafari SMH, Orouji AA, Abbasi A.
europepmc +1 more source
Photovoltaic Effect in a III‐IV‐V Compound Semiconductor
A large reduction of the GaAs band gap is obtained with incorporation of 6.5% Ge during epitaxy without introducing extended defects or composition inhomogeneity. Heterojunction solar cell devices were fabricated with 0.76‐V open circuit voltage and an internal quantum efficiency above 40% at energies below the bandgap of the GaAs emitter.
José M. Ripalda +13 more
wiley +1 more source
Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen Implantation. [PDF]
Denis N +11 more
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Field-tunable charge confinement in III-V layered nanowire-array superlattices. [PDF]
Méndez-Camacho R +2 more
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This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi +8 more
wiley +1 more source
Photovoltaic water electrolysis reaching 31.3% solar-to-H<sub>2</sub> conversion efficiency under outdoor operating conditions. [PDF]
Martínez JF +3 more
europepmc +1 more source
Porous modified calcium carbonate (MCC) is presented as an efficient carrier for humidity‐activated oxygen scavengers based on gallic acid and ascorbic acid. The porous MCC structure preserves high accessibility of the active compounds, enabling effective oxygen scavenging under high relative humidity, with performance governed by loading level ...
Nastasia M. Coray +6 more
wiley +1 more source
A Photovoltaic-Integrated Broadband Photodetector Based on Vertically-Stacked Lateral-Aligned Nanowire Arrays. [PDF]
Jin K, Yan X, Li Y, Zhang X.
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An advanced patterning method is presented for metal‐assisted chemical etching. The interlayer replaces the resist and enables catalyst deposition on a clean interface. The prepared samples show improved performance with a more reproducible etching profile, higher aspect ratio, and increased consistency over a larger area.
Bryan Peter Jost Benz +2 more
wiley +1 more source
Over 1.65 GW cm<sup>-2</sup> sr<sup>-1</sup> brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL. [PDF]
Zhang Z +11 more
europepmc +1 more source

