Results 141 to 150 of about 133,403 (291)
AI-Guided Intrinsic and Extrinsic Photocorrosion Inhibition of III-V Semiconductors for Durable Photoelectrochemical Water Splitting. [PDF]
Sarfraz N +5 more
europepmc +1 more source
Using time-resolved photoluminescence (PL) measurements, we have studied the exciton localization effect in InGaAs/GaAs quantum wire (QWR) structures formed in corrugated narrow InGaAs/GaAs quantum wells (QWs) grown on (553)B GaAs substrate. The PL decay
Ge WK +4 more
core
Abstract Background The promoters and enhancers of heat shock genes, such as the 1.5‐kb promoter of the zebrafish hsp70l gene, are valuable tools for temporal activation of transgenes. It has been widely purported that heat shock treatments result in ubiquitous expression of hsp70l‐driven transgenes.
Jong‐Su Park, Xiangyun Wei
wiley +1 more source
Modelling Terahertz Wave Generation in InAs Quantum-Dot Containing GaAs-Based Photoconductive Antenna. [PDF]
Wada O +5 more
europepmc +1 more source
Abstract The olfactory placode (OP) generates a broad array of chemosensory neurons in the nasal region, including olfactory sensory neurons, vomeronasal sensory neurons, neurons of the septal organ, and Grueneberg ganglion. During invagination, the OP also generates migratory neuronal populations, including gonadotropin‐releasing hormone‐1 (GnRH‐1 ...
Enrico Amato Jr. +5 more
wiley +1 more source
Machine learning prediction of photoionization cross section in GaAs AlGaAs quantum dot ring nanostructures. [PDF]
Jaouane M +5 more
europepmc +1 more source
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
The Role of Morphology and Phase Engineering in Molybdenum Sulfide for Robust Photoelectrochemical Hydrogen Evolution on III-V Photoelectrodes. [PDF]
Anfar Z +8 more
europepmc +1 more source
超晶格中GaAs/InGaAs界面与InGaAs/GaAs界面的特性差异
In_xGa_(1-x)缓冲层上生长In_yGa_(1-y)As/GaAs超晶格 ...
张子平 +6 more
core
The underlying interface physics and engineering strategies across key POI material systems, including LiNbO3/Si, LiNbO3/SiC, LiNbO3/diamond, and AlN/diamond, were reviewed. The key engineering strategies such as atomic‐scale bonding optimization, nanostructuring, ultrathin phonon‐bridge interlayers, and ferroelectric domain wall engineering for ...
Yunjia Bao +6 more
wiley +1 more source

