Results 181 to 190 of about 300,339 (303)
INTERFACIAL REACTIONS IN THE CO/SI/GAAS AND SI/CO/GAAS SYSTEMS
The interfacial reactions between thin films of cobalt and silicon and (100)-oriented GaAs substrates in two configurations, Co/Si/GaAs and Si/Co/GaAs, were studied using a variety of techniques including Auger electron spectroscopy, x-ray diffraction ...
HO J +4 more
core
Near‐Infrared Polarimetric Imaging With Nonlinear Flat‐Optics
ABSTRACT A compact and broadband polarimetric imaging platform is presented, based on second‐harmonic generation (SHG) in nonlinear flat‐optics. The system employs periodic all‐dielectric AlGaAs gratings to induce polarization‐dependent SH emission, enabling pixel by pixel direct retrieval of the full Stokes vector from an input intensity distribution ...
Evgenii Menshikov +6 more
wiley +1 more source
Revealing the Resonant Physics of Open Photonic Time Crystals
ABSTRACT Photonic time crystals (PTCs) are media whose permittivity is modulated periodically in time, enabling momentum bandgaps and parametric amplification of light. Their realization at the nanoscale can revolutionize the study of light‐matter interactions.
Adrià Canós Valero +5 more
wiley +1 more source
X-ray diffraction study of GaAs/InAs/GaAs ultrathin single quantum well
Ultrathin single quantum well (about one monolayer) grown on GaAs(001) substrate with GaAs cap layer has been studied by high resolution x-ray diffractometer on a beamline of the Beijing Synchrotron Radiation Facility.
Jiang XM +6 more
core
Comb‐Driven Coherent Optical Transmitter for Scalable DWDM Interconnects
A comb‐driven coherent optical transmitter on a Si/SiN platform enables scalable DWDM interconnects by integrating ultra‐compact microring‐assisted modulators and interleavers. High‐baud coherent signaling achieves 400 Gb/s per wavelength and >$>$1 Tb/s multi‐channel transmission, with projected >$>$10 Tb/s per fiber, offering a path toward energy ...
Alireza Geravand +11 more
wiley +1 more source
Confinement in thickness-controlled GaAs polytype nanodots.
N. Vainorius +5 more
semanticscholar +1 more source
In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(001) substrate
Thin GaAs/AlAs and GaAs/GaAs buffer layer structure have been fabricated on the GaAs(001) substrate. The top GaAs buffer layer is decoupled from the host substrate by introduction of a low temperature thin interlayer (AlAs or GaAs), which was ...
Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China. +7 more
core
Decades of CdTe and CdZnTe gamma‐ray spectrometer development define core design principles for room‐temperature semiconductor detectors. This Review highlights how metal halide perovskites rapidly assimilate these principles, particularly through defect and compositional engineering strategies that establish favorable spectroscopic conditions for ...
Younghak Kim +7 more
wiley +1 more source
ABSTRACT Objectives This study aimed to evaluate the efficacy of photobiomodulation therapy (PBMT), therapeutic ultrasound (TUS), boric acid (BA), and their combinations in preventing experimentally induced intra‐abdominal adhesions in rats. Materials and Methods Ninety‐six male Wistar rats (14 weeks old) were randomly assigned to eight groups (Control,
Sıtkıcan Okur +10 more
wiley +1 more source

